21 Papers
151 Citations
H. Grampeix is an academic researcher from Commissariat à l'énergie atomique et aux énergies alternatives. The author has contributed to research in topics: Dielectric & High-κ dielectric. The author has an hindex of 11, co-authored 21 publications.
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Papers
3D monolithic integration: Technological challenges and electrical results
Maud Vinet,Perrine Batude,Claude Tabone,Bernard Previtali,C. LeRoyer,A. Pouydebasque,Laurent Clavelier,A. Valentian,Olivier P. Thomas,S. Michaud,Loic Sanchez,L. Baud,A. Roman,V. Carron,Fabrice Nemouchi,V. Mazzocchi,H. Grampeix,Amara Amara,Simon Deleonibus,O. Faynot +19 more
TL;DR: In this paper, the main technological challenges associated with monolithic 3D integration are reviewed and solutions to assess them are proposed, and the electrical results obtained within this integration scheme are summarized: mixed Ge over Si invertor is demonstrated and electrostatic coupling between top and bottom layer is used to shift the threshold voltage of the top layer.
113
High performance 70 nm gate length germanium-on-insulator pMOSFET with high-k/metal gate
K. Romanjek,Louis Hutin,C. Le Royer,A. Pouydebasque,Marie-Anne Jaud,Claude Tabone,E. Augendre,Loic Sanchez,J.M. Hartmann,H. Grampeix,V. Mazzocchi,S. Soliveres,R. Truche,Laurent Clavelier,P. Scheiblin,X. Garros,G. Reimbold,Maud Vinet,Fabien Boulanger,Simon Deleonibus +19 more
TL;DR: In this paper, the authors demonstrate for the first time 70nm gate length gate length TiN/HfO 2 pMOSFETs on 200mm GeOI wafers, with excellent performance: I ON Â= 260μA/μm and I OFF Â = 500 Ã 1.0 Â V (without germanide).
41
20nm gate length trigate pFETs on strained SGOI for high performance CMOS
Louis Hutin,M. Casse,C. Le Royer,J.-F. Damlencourt,A. Pouydebasque,Cuiqin Xu,Claude Tabone,J.M. Hartmann,V. Carron,H. Grampeix,V. Mazzocchi,R. Truche,Olivier Weber,Perrine Batude,X. Garros,Laurent Clavelier,Maud Vinet,O. Faynot +17 more
- 15 Jun 2010
TL;DR: In this article, the shortest and narrowest highκ/metal gate n- and pFETs on compressively strained enriched SiGe On Insulator (c-SGOI) reported to date (L G =20nm; W=30nm; T SiGe =15nm).
31
X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy investigation of Al-related dipole at the HfO2/Si interface
Li Qiang Zhu,Nicholas Barrett,P. Jégou,F. Martin,Charles Leroux,Eugénie Martinez,H. Grampeix,O. Renault,Amal Chabli +8 more
TL;DR: In this paper, an Al-related interfacial dipole in the HfO2/Al2O3/SiO2 gate stack has been identified, and X-ray photoelectron spectroscopy analysis shows that the dipole is correlated with the formation of an interfacial Al-silicate.
31
Thorough investigation of Si-nanocrystal memories with high-k interpoly dielectrics for sub-45nm node Flash NAND applications
G. Molas,Marc Bocquet,Julien Buckley,J. P. Colonna,L. Masarotto,H. Grampeix,François Martin,V. Vidal,Alain Toffoli,P. Brianceau,L. Vermande,P. Scheiblin,Marc Gely,A.M. Papon,G. Auvert,L. Perniola,Christophe Licitra,T. Veyron,Névine Rochat,C. Bongiorno,Salvatore Lombardo,B. De Salvo,Simon Deleonibus +22 more
- 10 Dec 2007
TL;DR: In this article, the authors showed that high-k interpoly dielectrics (IPD) can offer excellent performance in the Fowler-Nordheim regime, with great relevance for future sub-45 nm NAND memory generations.