S. Soliveres
University of Montpellier
11 Papers
60 Citations
S. Soliveres is an academic researcher from University of Montpellier. The author has contributed to research in topics: Metal gate & Time-dependent gate oxide breakdown. The author has an hindex of 7, co-authored 11 publications.
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Papers
High performance 70 nm gate length germanium-on-insulator pMOSFET with high-k/metal gate
K. Romanjek,Louis Hutin,C. Le Royer,A. Pouydebasque,Marie-Anne Jaud,Claude Tabone,E. Augendre,Loic Sanchez,J.M. Hartmann,H. Grampeix,V. Mazzocchi,S. Soliveres,R. Truche,Laurent Clavelier,P. Scheiblin,X. Garros,G. Reimbold,Maud Vinet,Fabien Boulanger,Simon Deleonibus +19 more
TL;DR: In this paper, the authors demonstrate for the first time 70nm gate length gate length TiN/HfO 2 pMOSFETs on 200mm GeOI wafers, with excellent performance: I ON Â= 260μA/μm and I OFF Â = 500 Ã 1.0 Â V (without germanide).
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High- $\kappa$ and Metal-Gate pMOSFETs on GeOI Obtained by Ge Enrichment: Analysis of ON and OFF Performances
C. Le Royer,Benjamin Vincent,Laurent Clavelier,J.-F. Damlencourt,Claude Tabone,Perrine Batude,D. Blachier,R. Truche,Yves Campidelli,Q.T. Nguyen,Sorin Cristoloveanu,S. Soliveres,G. Le Carval,Fabien Boulanger,T. Billon,D. Bensahel,Simon Deleonibus +16 more
TL;DR: In this paper, high-kappa/metal-gate pMOSFETs fabricated on high-quality 200mm germanium-on-insulator (GeOI) wafers obtained by the Ge enrichment technique were reported.
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•Proceedings Article
105 nm Gate length pMOSFETs with high-K and metal gate fabricated in a Si process line on 200 mm GeOI wafers
C. Le Rayer,Laurent Clavelier,Claude Tabone,K. Romanjek,Chrystel Deguet,Loic Sanchez,J.M. Hartmann,M.-C. Roure,H. Grampeix,S. Soliveres,G. Le Carval,R. Truche,A. Pouydebasque,M. Vinet,Simon Deleonibus +14 more
- 01 Jan 2008
TL;DR: In this paper, the authors report on the fabrication and electrical characterization of deep sub-micron (gate length down to 105 nm) GeOI pMOSFETs.
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Investigation of 1/f noise in germanium-on-insulator 0.12 μm PMOS transistors from weak to strong inversion
J. Gyani,M. Valenza,S. Soliveres,Frédéric Martinez,C. Le Royer,E. Augendre,K. Romanjek,Charlotte Drazek +7 more
TL;DR: In this paper, an experimental analysis of the noise measurements performed in germanium-on-insulator (GeOI) 0.12μm PMOS transistors from weak to strong inversion is presented.
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High performance 70nm gate length Germanium-On-Insulator pMOSFET with high- /metal gate
K. Romanjek,Louis Hutin,C. Le Royer,A. Pouydebasque,Marie-Anne Jaud,Claude Tabone,E. Augendre,Loic Sanchez,J.M. Hartmann,H. Grampeix,V. Mazzocchi,S. Soliveres,R. Truche,Laurent Clavelier,P. Scheiblin,X. Garros,G. Reimbold,M. Vinet,Fabien Boulanger,Simon Deleonibus +19 more
- 18 Nov 2008
TL;DR: In this article, the authors demonstrate the performance of 70 nm gate length TiN/HfO2 pMOSFETs on 200 mm GeOI wafers, with excellent performances: ION=330 muA/mum & IOFF=1 muA /mum @ Vd=-1.2 V.
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