Abstract: Here, we present a structural study on the origin of ferroelectricity in Gd doped HfO2 thin films. We apply aberration corrected high-angle annular dark-field scanning transmission electron microscopy to directly determine the underlying lattice type using projected atom positions and measured lattice parameters. Furthermore, we apply nanoscale electron diffraction methods to visualize the crystal symmetry elements. Combined, the experimental results provide unambiguous evidence for the existence of a non-centrosymmetric orthorhombic phase that can support spontaneous polarization, resolving the origin of ferroelectricity in HfO2 thin films.

Abstract: Planar metasurfaces and plasmonic resonators have shown great promise for sensing applications across the electromagnetic domain ranging from the microwaves to the optical frequencies. However, these sensors suffer from lower figure of merit and sensitivity due to the radiative and the non-radiative loss channels in the plasmonic metamaterial systems. We demonstrate a metamaterial absorber based ultrasensitive sensing scheme at the terahertz frequencies with significantly enhanced sensitivity and an order of magnitude higher figure of merit compared to planar metasurfaces. Magnetic and electric resonant field enhancement in the impedance matched absorber cavity enables stronger interaction with the dielectric analyte. This finding opens up opportunities for perfect metamaterial absorbers to be applied as efficient sensors in the finger print region of the electromagnetic spectrum with several organic, explosive, and bio-molecules that have unique spectral signature at the terahertz frequencies.

Abstract: The thermal conductivities of β-Ga2O3 single crystals along four different crystal directions were measured in the temperature range of 80–495 K using the time domain thermoreflectance method. A large anisotropy was found. At room temperature, the [010] direction has the highest thermal conductivity of 27.0 ± 2.0 W/mK, while that along the [100] direction has the lowest value of 10.9 ± 1.0 W/mK. At high temperatures, the thermal conductivity follows a ∼1/T relationship characteristic of Umklapp phonon scattering, indicating phonon-dominated heat transport in the β-Ga2O3 crystal. The measured experimental thermal conductivity is supported by first-principles calculations, which suggest that the anisotropy in thermal conductivity is due to the differences of the speed of sound along different crystal directions.

Abstract: With the consideration of photon recycling effect, the efficiency limit of methylammonium lead iodide (CH3NH3PbI3) perovskite solar cells is predicted by a detailed balance model. To obtain convincing predictions, both AM 1.5 spectrum of Sun and experimentally measured complex refractive index of perovskite material are employed in the detailed balance model. The roles of light trapping and angular restriction in improving the maximal output power of thin-film perovskite solar cells are also clarified. The efficiency limit of perovskite cells (without the angular restriction) is about 31%, which approaches to Shockley-Queisser limit (33%) achievable by gallium arsenide (GaAs) cells. Moreover, the Shockley-Queisser limit could be reached with a 200 nm-thick perovskite solar cell, through integrating a wavelength-dependent angular-restriction design with a textured light-trapping structure. Additionally, the influence of the trap-assisted nonradiative recombination on the device efficiency is investigated. The work is fundamentally important to high-performance perovskite photovoltaics.

Abstract: Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130 °C—often needed for the curing of printed metal contacts—detrimentally impacts hole collection of such devices. We circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%.

Abstract: We have achieved a certified 25.1% conversion efficiency in a large area (151.9 cm2) heterojunction (HJ) crystalline Si (c-Si) solar cell with amorphous Si (a-Si) passivation layer. This efficiency is a world record in a both-side-contacted c-Si solar cell. Our high efficiency HJ c-Si solar cells are investigated from the standpoint of the effective minority carrier lifetime (τe), and the impact of τe on fill factor (FF) is discussed. The τe measurements of our high efficiency HJ c-Si solar cells reveal that τe at an injection level corresponding to an operation point of maximum power is dominated by the carrier recombination at the a-Si/c-Si interface. By optimization of the process conditions, the carrier recombination at the a-Si/c-Si interface is reduced, which leads to an improvement of the FF by an absolute value of 2.7%, and a conversion efficiency of 25.1% has been achieved. These results indicate that the reduction of carrier recombination centers at the a-Si/c-Si interface should be one of the m...

Abstract: We study the energy relaxation times (T1) of superconducting transmon qubits in 3D cavities as a function of dielectric participation ratios of material surfaces. This surface participation ratio, representing the fraction of electric field energy stored in a dissipative surface layer, is computed by a two-step finite-element simulation and experimentally varied by qubit geometry. With a clean electromagnetic environment and suppressed non-equilibrium quasiparticle density, we find an approximately proportional relation between the transmon relaxation rates and surface participation ratios. These results suggest dielectric dissipation arising from material interfaces is the major limiting factor for the T1 of transmons in 3D circuit quantum electrodynamics architecture. Our analysis also supports the notion of spatial discreteness of surface dielectric dissipation.

Abstract: We report the observation of ferroelectric characteristics in undoped hafnium oxide thin films in a thickness range of 4–20 nm. The undoped films were fabricated using atomic layer deposition (ALD) and embedded into titanium nitride based metal-insulator-metal (MIM) capacitors for electrical evaluation. Structural as well as electrical evidence for the appearance of a ferroelectric phase in pure hafnium oxide was collected with respect to film thickness and thermal budget applied during titanium nitride electrode formation. Using grazing incidence X-Ray diffraction (GIXRD) analysis, we observed an enhanced suppression of the monoclinic phase fraction in favor of an orthorhombic, potentially, ferroelectric phase with decreasing thickness/grain size and for a titanium nitride electrode formation below crystallization temperature. The electrical presence of ferroelectricity was confirmed using polarization measurements. A remanent polarization Pr of up to 10 μC cm−2 as well as a read/write endurance of 1.6 ×...

Abstract: We present the simulation, implementation, and measurement of a broadband terahertz (THz) metamaterial absorber. By stacking 12 metallic bars of varying lengths on three polyimide layers with equal spacing, a broadband absorption spectrum is formed through merging multiple successive resonance peaks. The measured total absorption exceeds 95% from 0.81 to 1.32 THz at the normal incidence and the full width at half maximum is 64% (from 0.76 to 1.48 THz). The absorption decreases with fluctuations as the incident angle increases but remains above 62% even at the incident angle of 40°. The physical explanation to the absorption mechanism is presented and verified by a 9-bar example, which exhibits narrower absorption bandwidth. It is also experimentally demonstrated that the proposed structure is robust against misalignment of each metallic layer.

Abstract: Wavelength dispersion of optical power limiting is an important factor to be considered while designing potential optical limiters for laser safety applications We report the observation of broadband, ultrafast optical limiting in reduced graphene oxide (rGO), measured by a single open aperture Z-scan using a white light continuum (WLC) source WLC Z-scan is fast when the nonlinearity is to be measured over broad wavelength ranges, and it obviates the need for an ultrafast tunable laser making it cost-economic compared to conventional Z-scan The nonlinearity arises from nondegenerate two-photon absorption, owing mostly to the crystallinity and extended π conjugation of rGO

Abstract: We present microwave-frequency NbTiN resonators on silicon, systematically achieving internal quality factors above 1 M in the quantum regime. We use two techniques to reduce losses associated with two-level systems: an additional substrate surface treatment prior to NbTiN deposition to optimize the metal-substrate interface and deep reactive-ion etching of the substrate to displace the substrate-vacuum interfaces away from high electric fields. The temperature and power dependence of resonator behavior indicate that two-level systems still contribute significantly to energy dissipation, suggesting that more interface optimization could further improve performance.

Abstract: Possible magnetic skyrmion device applications motivate the search for structures that extend the stability of skyrmion spin textures to ambient temperature. Here, we demonstrate an experimental approach to stabilize a room temperature skyrmion ground state in chiral magnetic films via exchange coupling across non-magnetic spacer layers. Using spin polarized low-energy electron microscopy to measure all three Cartesian components of the magnetization vector, we image the spin textures in Fe/Ni films. We show how tuning the thickness of a copper spacer layer between chiral Fe/Ni films and perpendicularly magnetized Ni layers permits stabilization of a chiral stripe phase, a skyrmion phase, and a single domain phase. This strategy to stabilize skyrmion ground states can be extended to other magnetic thin film systems and may be useful for designing skyrmion based spintronics devices.

Abstract: In this report, we demonstrate that parasitic leakage currents dominate the current voltage characteristics of organic solar cells measured under illumination intensities less than one sun when the device shunt resistance is too low (<106 Ω cm2). The implications of such effects on common interpretations of the light intensity dependence of the solar cell open circuit voltage, fill factor, short circuit current, and power conversion efficiency are discussed in detail.

Abstract: Sb2Se3 is a very promising photovoltaic material because of its attractive material, optical and electrical properties. Very recently, we reported a superstrate CdS/Sb2Se3 solar cell with 5.6% certified efficiency. In this letter, we focused on the optical properties of amorphous and polycrystalline Sb2Se3 thin films prepared by thermal evaporation. Using temperature dependent transmission spectrum and temperature dependent photoluminescence, the indirect optical transition nature and bandgap values as functions of temperature were acquired. Using ellipsometry measurements and Swanepoel's envelope method, the refractive indices as well as the dielectric constant in a wide wavelength range of 193–2615 nm were obtained. These works would lay the foundation for the further development of Sb2Se3 thin film solar cells.

Abstract: The field effect transistors (FETs) based on thin layer MoS2 often have large hysteresis and unstable threshold voltage in their transfer curves, mainly due to the charge trapping at the oxide-semiconductor interface. In this paper, the charge trapping and de-trapping processes at the SiO2-MoS2 interface are studied. The trapping charge density and time constant at different temperatures are extracted. Making use of the trapped charges, the threshold voltage of the MoS2 based metal-oxide-semiconductor FETs is adjusted from 4 V to −45 V. Furthermore, the impact of the trapped charges on the carrier transport is evaluated. The trapped charges are suggested to give rise to the unscreened Coulomb scattering and/or the variable range hopping in the carrier transport of the MoS2 sheet.

Abstract: We report the experimental realization of perfect sound absorption by sub-wavelength monopole and dipole resonators that exhibit degenerate resonant frequencies. This is achieved through the destructive interference of two resonators' transmission responses, while the matching of their averaged impedances to that of air implies no backscattering, thereby leading to total absorption. Two examples, both using decorated membrane resonators (DMRs) as the basic units, are presented. The first is a flat panel comprising a DMR and a pair of coupled DMRs, while the second one is a ventilated short tube containing a DMR in conjunction with a sidewall DMR backed by a cavity. In both examples, near perfect absorption, up to 99.7%, has been observed with the airborne wavelength up to 1.2 m, which is at least an order of magnitude larger than the composite absorber. Excellent agreement between theory and experiment is obtained.

Abstract: We present the design of a metamaterial medium for electromagnetic energy harvesting based on the full absorption concept. A metamaterial slab was designed comprising 13 × 13 electrically small cells, each loaded with an 82 Ω resistor which mimics the input impedance of a rectification circuitry. Unlike earlier designs of metamaterial absorbers, here the power absorption is mostly dissipated across a resistive load instead of the dielectric substrate. This implies that effective electromagnetic energy harvesting can be achieved. The power is channeled through a via connected to each cell. For a design optimized at 3 GHz, simulation and experimental results show power absorption efficiency of 97% and 93%, respectively.

Abstract: The dielectric properties and electrical hysteresis behaviors of Pb0.97La0.02(Zr0.58Sn0.335Ti0.085)O3 antiferroelectric (AFE) ceramics were investigated in this work with an emphasis on energy storage properties. Three phase transition points can be detected as temperature increases. AFE and paraelectric phases are found to coexist from 100 °C to 170 °C. The room temperature recoverable energy density is 1.37 J/cm3 at 8.6 kV/mm. With increasing temperature (from 20 °C to 100 °C) and frequency (from 0.01 to 100 Hz) under 8.6 kV/mm, the variation of recoverable energy density was less than 15%, all higher than 1.2 J/cm3. All the corresponding energy efficiencies were no less than 75%. The high energy density, high energy efficiency, and their weak dependence on temperature and frequency during a wide scope indicate that these antiferroelectric ceramics are quite promising to be used for pulse power capacitors applications.

Abstract: III–V nanoscale devices were monolithically integrated on silicon-on-insulator (SOI) substrates by template-assisted selective epitaxy (TASE) using metal organic chemical vapor deposition. Single crystal III–V (InAs, InGaAs, GaAs) nanostructures, such as nanowires, nanostructures containing constrictions, and cross junctions, as well as 3D stacked nanowires were directly obtained by epitaxial filling of lithographically defined oxide templates. The benefit of TASE is exemplified by the straightforward fabrication of nanoscale Hall structures as well as multiple gate field effect transistors (MuG-FETs) grown co-planar to the SOI layer. Hall measurements on InAs nanowire cross junctions revealed an electron mobility of 5400 cm2/V s, while the alongside fabricated InAs MuG-FETs with ten 55 nm wide, 23 nm thick, and 390 nm long channels exhibit an on current of 660 μA/μm and a peak transconductance of 1.0 mS/μm at VDS = 0.5 V. These results demonstrate TASE as a promising fabrication approach for heterogeneou...

Abstract: In this letter, a class of honeycomb acoustic metamaterial possessing lightweight and yet sound-proof properties is designed, theoretically proven, and then experimentally verified. It is here reported that the proposed metamaterial having a remarkably small mass per unit area at 1.3 kg/m2 can achieve low frequency (<500 Hz) sound transmission loss (STL) consistently greater than 45 dB. Furthermore, the sandwich panel which incorporates the honeycomb metamaterial as the core material yields a STL that is consistently greater than 50 dB at low frequencies. The proposed metamaterial is promising for constructing structures that are simultaneously strong, lightweight, and sound-proof.

Abstract: We report on violet-emitting III-nitride light-emitting diodes (LEDs) grown on bulk GaN substrates employing a flip-chip architecture. Device performance is optimized for operation at high current density and high temperature, by specific design consideration for the epitaxial layers, extraction efficiency, and electrical injection. The power conversion efficiency reaches a peak value of 84% at 85 °C and remains high at high current density, owing to low current-induced droop and low series resistance.

Abstract: This paper presents an ultrasonic fingerprint sensor based on a 24 × 8 array of 22 MHz piezoelectric micromachined ultrasonic transducers (PMUTs) with 100 μm pitch, fully integrated with 180 nm complementary metal oxide semiconductor (CMOS) circuitry through eutectic wafer bonding. Each PMUT is directly bonded to a dedicated CMOS receive amplifier, minimizing electrical parasitics and eliminating the need for through-silicon vias. The array frequency response and vibration mode-shape were characterized using laser Doppler vibrometry and verified via finite element method simulation. The array's acoustic output was measured using a hydrophone to be ∼14 kPa with a 28 V input, in reasonable agreement with predication from analytical calculation. Pulse-echo imaging of a 1D steel grating is demonstrated using electronic scanning of a 20 × 8 sub-array, resulting in 300 mV maximum received amplitude and 5:1 contrast ratio. Because the small size of this array limits the maximum image size, mechanical scanning was used to image a 2D polydimethylsiloxane fingerprint phantom (10 mm × 8 mm) at a 1.2 mm distance from the array.

Abstract: The low quantum yield (∼10−5) has restricted practical use of photoluminescence (PL) from MoS2 composed of a few layers, but the quantum confinement effects across two-dimensional planes are believed to be able to boost the PL intensity In this work, PL from 2 to 9 nm MoS2 quantum dots (QDs) is excluded from the solvent and the absorption and PL spectra are shown to be consistent with the size distribution PL from MoS2 QDs is also found to be sensitive to aggregation due to the size effect

Abstract: Recent theoretical and experimental reports have shown that the perovskite CH3NH3PbI3 exhibits unique ambipolar self-doping properties. Here, we show by density-functional theory calculation that its sister perovskite, CH3NH3PbBr3, exhibits a unipolar self-doping behavior—CH3NH3PbBr3 presents only good p-type conductivity under thermal equilibrium growth conditions. We further show that despite a large bandgap of 2.2 eV, all dominant defects in CH3NH3PbBr3 create shallow levels, which partially explains the ultra-high open-circuit voltages achieved by CH3NH3PbBr3-based thin-film solar cells. Our results suggest that the perovskite CH3NH3PbBr3 can be both an excellent solar cell absorber and a promising low-cost hole-transport material for lead halide perovskite solar cells.

Abstract: We study the device size dependence of spin-orbit torque induced magnetization switching in a Ta/CoFeB/MgO structure with perpendicular easy axis. The miniaturization of the device from micrometer-sized wire to 80-nm dot results in the increase of the threshold current density Jth by one order, whereas Jth increases only slightly with further reducing the device size down to 30 nm. No significant increase in Jth is seen, as the current pulse width decreases from 100 ms down to 3 ns. We reveal that the switching in devices at reduced size is reasonably well explained by the macrospin model, in which the effects of both the Slonczewski-like torque and field-like torque are included.

Abstract: In characterizing thermoelectric materials, electrical and thermal transport measurements are often used to estimate electronic band structure properties such as the effective mass and band gap. The Goldsmid-Sharp band gap, Eg = 2e|S|_(max)T_(max), is a tool widely employed to estimate the band gap from temperature dependent Seebeck coefficient measurements. However, significant deviations of more than a factor of two are now known to occur. We find that this is when either the majority-to-minority weighted mobility ratio (A) becomes very different from 1.0 or as the band gap (Eg) becomes significantly smaller than 10 kBT. For narrow gaps (Eg ≲ 6 kBT), the Maxwell-Boltzmann statistics applied by Goldsmid-Sharp break down and Fermi-Dirac statistics are required. We generate a chart that can be used to quickly estimate the expected correction to the Goldsmid-Sharp band gap depending on A and S_(max); however, additional errors can occur for S < 150 μV/K due to degenerate behavior.

Abstract: The electronic and optical properties of bulk and monolayer PdSe2 are investigated using first-principles calculations. Using the modified Becke-Johnson potential, we find semiconductor behavior for both bulk and monolayer PdSe2 with indirect gap values of 0.03 eV for bulk and 1.43 eV for monolayer, respectively. Our sheet optical conductivity results support this observation and show similar anisotropic feature in the 2D plane. We further study the thermoelectric properties of the 2D PdSe2 using Blotzmann transport model and find interestingly high Seebeck coefficients (>200 μV/K) for both p- and n-type up to high doping level (∼2 × 1013 cm−2) with an anisotropic character in an electrical conductivity suggesting better thermoelectric performance along y direction in the plane.

Abstract: As a new type of two-dimensional crystal material, black phosphorus (BP) exhibits excellent electronics and optical performance. Herein, we focus on carrier relaxation dynamics and nonlinear optical properties of BP suspension. Atomic force microscopy, transmission electron microscopy, and optical transmission spectrum are employed to characterize the structure and linear optical properties of the BP. Additionally, pump-probe experiments at wavelength of 1550 nm were carried out to study the carrier dynamics in BP suspension, and ultrafast recovery time was observed (τs = 24 ± 2 fs). Furthermore, we demonstrate the saturable absorption signals by open aperture Z-scan experiments at wavelengths of 1550 nm, 532 nm, and 680 nm. The results indicate that BP has broadband saturable absorption properties and the nonlinear absorption coefficients were determined to be β2 = −0.20 ± 0.08 × 10−3 cm/GW (532 nm), β2 = −0.12 ± 0.05 × 10−3 cm/GW (680 nm), and β2 = −0.15 ± 0.09 × 10−3 cm/GW (1550 nm).

Abstract: We report on the development of a nanometer scale strain mapping technique by means of scanning nano-beam electron diffraction. Only recently possible due to fast acquisition with a direct electron detector, this technique allows for strain mapping with a high precision of 0.1% at a lateral resolution of 1 nm for a large field of view reaching up to 1 μm. We demonstrate its application to a technologically relevant strain-engineered GaAs/GaAsP hetero-structure and show that the method can even be applied to highly defected regions with substantial changes in local crystal orientation. Strain maps derived from atomically resolved scanning transmission electron microscopy images were used to validate the accuracy, precision and resolution of this versatile technique.