John Bruley
IBM
111 Papers
1.1K Citations
John Bruley is an academic researcher from IBM. The author has contributed to research in topics: Metal gate & Silicon. The author has an hindex of 28, co-authored 109 publications. Previous affiliations of John Bruley include Max Planck Society & Lehigh University.
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Papers
Pulsed laser deposition of diamond‐like carbon films
David L. Pappas,Katherine L. Saenger,John Bruley,William Krakow,Jerome J. Cuomo,Tieer Gu,Robert W. Collins +6 more
TL;DR: In this paper, the effect of a variety of process parameters on the film properties is investigated, and the effects of a low pressure hydrogen background and the use of auxiliary pulsed and dc plasma enhancements are also examined.
335
Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode
Catherine Dubourdieu,John Bruley,Thomas M. Arruda,Agham Posadas,Jean Jordan-Sweet,Martin M. Frank,Eduard A. Cartier,David J. Frank,Sergei V. Kalinin,Alexander A. Demkov,Vijay Narayanan +10 more
TL;DR: Ferroelectric switching of 8- to 40-nm-thick BaTiO₃ films in metal-ferroelectric-semiconductor structures is realized, and field-effect devices using this epitaxial oxide stack can be envisaged.
262
Sputter deposition of dense diamond-like carbon films at low temperature
TL;DR: In this paper, thin carbon films were deposited by ion beam sputtering at temperatures of 77-1073 K. Using Rutherford backscattering spectrometry and electron energy loss spectroscopy, the trends in film density and bonding were examined as a function of deposition conditions.
261
Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si
Heinz Schmid,Mattias Borg,Kirsten E. Moselund,Lynne Gignac,Chris Breslin,John Bruley,Davide Cutaia,Heike Riel +7 more
TL;DR: In this article, a template-assisted selective epitaxy (TASE) was used to construct 3D stacked nanowires and multiple gate field effect transistors (MuG-FETs) co-planar to the SOI layer.
234
Vertical III-V nanowire device integration on Si(100).
Mattias Borg,Heinz Schmid,Kirsten E. Moselund,G. Signorello,Lynne Gignac,John Bruley,Chris Breslin,Pratyush Das Kanungo,Peter Werner,Heike Riel +9 more
TL;DR: In this paper, complementary metal-oxide-semiconductor (CMOS)-compatible integration of compound semiconductors on Si substrates was reported. And the results indicated a high uniformity and scalability in the fabrication process.
154