Johannes Müller
GlobalFoundries
118 Papers
473 Citations
Johannes Müller is an academic researcher from GlobalFoundries. The author has contributed to research in topics: Ferroelectricity & Ferroelectric capacitor. The author has an hindex of 40, co-authored 111 publications. Previous affiliations of Johannes Müller include Fraunhofer Society & Martin Luther University of Halle-Wittenberg.
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Papers
Ferroelectricity in hafnium oxide thin films
TL;DR: In this paper, it was shown that crystalline phases with ferroelectric behavior can be formed in thin thin films of SiO2 doped hafnium oxide, which is suitable for field effect transistors and capacitors due to its excellent compatibility to silicon technology.
2.3K
Ferroelectricity in Simple Binary ZrO2 and HfO2
Johannes Müller,T. S. Böscke,Uwe Schröder,Stefan Mueller,D. Bräuhaus,Ulrich Böttger,Lothar Frey,Thomas Mikolajick +7 more
TL;DR: A structural investigation revealed the orthorhombic phase to be of space group Pbc2(1), whose noncentrosymmetric nature is deemed responsible for the spontaneous polarization in this novel, nanoscale ferroelectrics.
1.5K
Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films
Min Hyuk Park,Young Hwan Lee,Han Joon Kim,Yu Jin Kim,Taehwan Moon,Keum Do Kim,Johannes Müller,Alfred Kersch,Uwe Schroeder,Thomas Mikolajick,Cheol Seong Hwang +10 more
TL;DR: The coupling of electric and thermal properties of the antiferroelectric thin films is expected to be useful for various applications, including energy harvesting/storage, solid-state-cooling, and infrared sensors.
985
Ferroelectricity in yttrium-doped hafnium oxide
Johannes Müller,Uwe Schröder,T. S. Böscke,I. Müller,Ulrich Böttger,L. Wilde,Jonas Sundqvist,Martin Lemberger,P. Kücher,Thomas Mikolajick,Lothar Frey +10 more
TL;DR: In this article, structural and electrical evidence for a ferroelectric phase in yttrium doped hafnium oxide thin films is presented, based on X-ray diffraction.
Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications
Johannes Müller,T. S. Böscke,D. Bräuhaus,Uwe Schröder,Ulrich Böttger,Jonas Sundqvist,P. Kücher,Thomas Mikolajick,Lothar Frey +8 more
TL;DR: In this article, the observation of ferroelectricity in capacitors based on hafnium-zirconium-oxide thin films of 7.5 to 9.5 nm thickness was reported.
547