R. Harris
SEMATECH
33 Papers
297 Citations
R. Harris is an academic researcher from SEMATECH. The author has contributed to research in topics: High-κ dielectric & Metal gate. The author has an hindex of 12, co-authored 32 publications. Previous affiliations of R. Harris include Advanced Micro Devices.
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Papers
Improved Electrical Characteristics of Ge-on-Si Field-Effect Transistors With Controlled Ge Epitaxial Layer Thickness on Si Substrates
Jungwoo Oh,Prashant Majhi,Hi-Deok Lee,Hi-Deok Lee,Oooksang Yoo,Oooksang Yoo,Sanjay K. Banerjee,Chang Yong Kang,Ji-Woon Yang,R. Harris,Hsing-Huang Tseng,R. Jammy +11 more
TL;DR: In this paper, a shallow source/drain (S/D) junction is formed using low dopant activation energy of Ge epitaxial layers, while suppressing activation in the Si substrates.
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Growth mechanism of TiN film on dielectric films and the effects on the work function
Kisik Choi,Patrick S. Lysaght,Husam N. Alshareef,Craig Huffman,Huang-Chun Wen,R. Harris,H. Luan,P. Y. Hung,Chris M. Sparks,M. Cruz,Ken Matthews,Prashant Majhi,Byoung Hun Lee +12 more
TL;DR: In this article, the growth mechanism of ALD-TiN film on different dielectrics and the resulting effective work function value was investigated and the growth rate and nucleation rate were found to be dependent on the dielectric films.
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Lifestyle activities of the elderly: composition and determinants.
TL;DR: This paper replicates the factor analysis of the Frenchay Activities Index (FAI) reported by Bond et al., using a group of subjects living independently in the community to confirm the existence of the four hypothesized dimensions of lifestyle.
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Mechanism of flatband voltage roll-off studied with Al2O3 film deposited on terraced oxide
TL;DR: In this paper, the authors investigated the mechanism of flatband voltage roll-off with capacitors fabricated on terraced oxide with various thicknesses of Al2O3 film deposited by atomic layer deposition.
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The effect of metal thickness, overlayer and high-k surface treatment on the effective work function of metal electrode
Kisik Choi,Huang-Chun Wen,Husam N. Alshareef,R. Harris,P. Lysaght,H. Luan,Prashant Majhi,Byoung Hun Lee +7 more
- 12 Dec 2005
TL;DR: In this article, the effective work function (EWF) of atomic layer deposited (ALD) TiN electrodes is shown to be a function of the TiN film thickness and that the metal/dielectric interface and the bulk metal film influence this measured response.
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