H. Luan
SEMATECH
21 Papers
273 Citations
H. Luan is an academic researcher from SEMATECH. The author has contributed to research in topics: Work function & Metal gate. The author has an hindex of 11, co-authored 20 publications.
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Papers
Decoupling the Fermi-level pinning effect and intrinsic limitations on p-type effective work function metal electrodes
Huang-Chun Wen,Prashant Majhi,Kisik Choi,Chanro Park,Husam N. Alshareef,H. Rusty Harris,H. Luan,Hiro Niimi,Hong-bae Park,Gennadi Bersuker,Patrick S. Lysaght,Dim-Lee Kwong,Seung-Chul Song,Byoung Hun Lee,Raj Jammy +14 more
TL;DR: In this paper, a review of literature combined with recent experimental results addressing the intrinsic and extrinsic factors controlling the effective work function (EWF) of metal gate electrodes on Hf-based high-K dielectrics is discussed.
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Metal gate work function engineering using AlNx interfacial layers
Husam N. Alshareef,Husam N. Alshareef,H. Luan,Kisik Choi,H.R. Harris,Huang-Chun Wen,Manuel Quevedo-Lopez,Prashant Majhi,Byoung Hun Lee +8 more
TL;DR: In this paper, a metal gate work function enhancement using thin AlNx interfacial layers has been evaluated and it was found that band edge effective work functions (∼5.10eV) can be achieved on hafnium-based high dielectric constant (high-k) materials using the AlNix interfacial layer and TiSiN electrodes.
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Growth mechanism of TiN film on dielectric films and the effects on the work function
Kisik Choi,Patrick S. Lysaght,Husam N. Alshareef,Craig Huffman,Huang-Chun Wen,R. Harris,H. Luan,P. Y. Hung,Chris M. Sparks,M. Cruz,Ken Matthews,Prashant Majhi,Byoung Hun Lee +12 more
TL;DR: In this article, the growth mechanism of ALD-TiN film on different dielectrics and the resulting effective work function value was investigated and the growth rate and nucleation rate were found to be dependent on the dielectric films.
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Effective work function modification of atomic-layer-deposited-TaN film by capping layer
Kisik Choi,Husam N. Alshareef,Husam N. Alshareef,Huang-Chun Wen,H.R. Harris,H. Luan,Y. Senzaki,P. Lysaght,Prashant Majhi,Prashant Majhi,Byoung Hun Lee,Byoung Hun Lee +11 more
TL;DR: In this article, the authors demonstrate that the metallic capping layer has a strong impact on the effective work function (EWF) of the metal gate and show that the work function can be increased from 4.5 to 4.8eV with chemical-vapor-deposited-TiN capping.
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Comparison of effective work function extraction methods using capacitance and current measurement techniques
Huang-Chun Wen,Rino Choi,George A. Brown,T. BosckeBoscke,K. Matthews,H.R. Harris,Kisik Choi,Husam N. Alshareef,H. Luan,Gennadi Bersuker,Prashant Majhi,Dim-Lee Kwong,Byoung Hun Lee +12 more
TL;DR: In this article, the effective work function (EWF) extracted on terraced oxide structures by capacitance-voltage-based techniques was compared with the work function calculated from the barrier height extracted by currentvoltage measurements.
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