F. Rochette
Los Angeles Harbor College
13 Papers
147 Citations
F. Rochette is an academic researcher from Los Angeles Harbor College. The author has contributed to research in topics: MOSFET & Electron mobility. The author has an hindex of 7, co-authored 10 publications.
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Papers
Experimental and comparative investigation of low and high field transport in substrate- and process-induced strained nanoscaled MOSFETs
Francois Andrieu,Thomas Ernst,Francois Lime,F. Rochette,K. Romanjek,Sylvain Barraud,C. Ravit,Frederic Boeuf,Malgorzata Jurczak,Mikael Casse,Olivier Weber,L. Brevard,Gilles Reimbold,Gerard Ghibaudo,Simon Deleonibus +14 more
- 14 Jun 2005
TL;DR: In this article, a detailed comparison of low and high-Vd transport between various substrate- and process-induced strained MOSFETs down to 40nm gate lengths is presented.
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25nm Short and Narrow Strained FDSOI with TiN/HfO2 Gate Stack
Francois Andrieu,C. Dupre,F. Rochette,O. Faynot,L. Tosti,C. Buj,E. Rouchouze,Mikael Casse,Bruno Ghyselen,Ian Cayrefourcq,L. Brevard,F. Allain,Jean-Charles Barbe,J. Cluzel,A. Vandooren,Stephane Denorme,Thomas Ernst,C. Fenouillet-Beranger,C. Jahan,D. Lafond,H. Dansas +20 more
- 02 Oct 2006
TL;DR: In this paper, the experimental performance of strained silicon directly on insulator (sSOI) was investigated for short and narrow FDSOI NMOS transistors integrated with a TiN/HfO2 gate stack.
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Impact of Mobility Boosters (XsSOI, CESL, TiN gate) on the Performance of ≪100≫ or ≪110≫ oriented FDSOI cMOSFETs for the 32nm Node
Francois Andrieu,O. Faynot,F. Rochette,Jean-Charles Barbe,C. Buj,Y. Bogumilowicz,F. Allain,Vincent Delaye,D. Lafond,F. Aussenac,S. Feruglio,J. Eymery,Takeshi Akatsu,P. Maury,L. Brevard,L. Tosti,H. Dansas,E. Rouchouze,J.M. Hartmann,L. Vandroux,Mikael Casse,Frederic Boeuf,Claire Fenouillet-Beranger,F. Brunier,Ian Cayrefourcq,Carlos Mazure,G. Gbibaudo,Simon Deleonibus +27 more
- 12 Jun 2007
TL;DR: In this article, the authors integrated 1.9 GPa eXtra-strained silicon on insulator (XsSOI) substrates in FDSOI n and pMOSFETs with gate length (LG) and width (W) down to 25 nm.
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A comprehensive study of magnetoresistance mobility in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors
Mikael Casse,F. Rochette,L. Thevenod,N. Bhouri,Francois Andrieu,Gilles Reimbold,F. Boulanger,Mireille Mouis,Gerard Ghibaudo,Duncan K. Maude +9 more
TL;DR: In this paper, the signature of Coulomb scattering (CS) on electron mobility on MOSFETs was investigated and the mobility degradation was shown to be effective for both strained and unstrained short channel devices, over the whole gate voltage range.
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Will strain be useful for 10nm quasi-ballistic FDSOI devices? An experimental study
V. Barral,Thierry Poiroux,F. Rochette,Maud Vinet,Sylvain Barraud,O. Faynot,L. Tosti,Francois Andrieu,Mikael Casse,Bernard Previtali,Romain Ritzenthaler,P. Grosgeorges,E. Bernard,G. LeCarval,Daniela Munteanu,J.L. Autran,Simon Deleonibus +16 more
- 12 Jun 2007
TL;DR: In this article, the authors extracted the ballisticity rates of both strained and unstrained n-fully depleted silicon on insulator devices with gate lengths down to 10 nm and demonstrated that strain takes actively part in quasi-ballistic drain current improvement thanks to a 22% injection velocity enhancement.
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