Francois Lime
Rovira i Virgili University
70 Papers
464 Citations
Francois Lime is an academic researcher from Rovira i Virgili University. The author has contributed to research in topics: MOSFET & Gate dielectric. The author has an hindex of 15, co-authored 66 publications. Previous affiliations of Francois Lime include Grenoble Institute of Technology & Los Angeles Harbor College.
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Papers
75 nm damascene metal gate and high-k integration for advanced CMOS devices
B. Guillaumot,X. Garros,Francois Lime,K. Oshima,B. Tavel,J. A. Chroboczek,Pascal Masson,R. Truche,A.M. Papon,F. Martin,J.-F. Damlencourt,S. Maitrejean,Maurice Rivoire,Charles Leroux,Sorin Cristoloveanu,Gerard Ghibaudo,Jean-Luc Autran,Thomas Skotnicki,Simon Deleonibus +18 more
- 08 Dec 2002
TL;DR: In this article, an advanced CMOS process has been proposed which includes key features: 75 nm gate length damascene metal gate, high-k dielectrics with 1.35 nm EOT.
98
A Quasi-Two-Dimensional Compact Drain–Current Model for Undoped Symmetric Double-Gate MOSFETs Including Short-Channel Effects
TL;DR: In this article, a drain-current model for undoped symmetric double-gate MOSFETs is proposed, where channel-length modulation and drain-induced barrier lowering are modeled by using an approximate solution of the 2D Poisson equation.
71
Characterization of effective mobility by split C(V) technique in N-MOSFETs with ultra-thin gate oxides
TL;DR: In this article, the amplitude of the effective mobility is found to be degraded significantly with oxide scaling, and the mobility attenuation at high field associated to the surface roughness remains unchanged with oxide thickness reduction.
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Experimental and comparative investigation of low and high field transport in substrate- and process-induced strained nanoscaled MOSFETs
Francois Andrieu,Thomas Ernst,Francois Lime,F. Rochette,K. Romanjek,Sylvain Barraud,C. Ravit,Frederic Boeuf,Malgorzata Jurczak,Mikael Casse,Olivier Weber,L. Brevard,Gilles Reimbold,Gerard Ghibaudo,Simon Deleonibus +14 more
- 14 Jun 2005
TL;DR: In this article, a detailed comparison of low and high-Vd transport between various substrate- and process-induced strained MOSFETs down to 40nm gate lengths is presented.
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A simple compact model for long-channel junctionless Double Gate MOSFETs
TL;DR: In this article, a simple explicit compact model for the drain current of long channel symmetrical junctionless double gate MOSFETs is presented, which leads to very simple equations compared to other models, while retaining high accuracy and physical consistency.
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