A.W. Morse
Northrop Grumman Corporation
8 Papers
222 Citations
A.W. Morse is an academic researcher from Northrop Grumman Corporation. The author has contributed to research in topics: Silicon carbide & Power-added efficiency. The author has an hindex of 8, co-authored 8 publications.
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Papers
•Proceedings Article
SiC electronics
A.K. Agarwal,G. Augustine,V. Balakrishna,C.D. Brandt,A.A. Burk,L.-S. Chen,Rowland C. Clarke,P.M. Esker,H.M. Hobgood,Richard H. Hopkins,A.W. Morse,L.B. Rowland,S. Seshadri,R.R. Siergiej,T.J. Smith,S. Sriram +15 more
- 01 Jan 1996
TL;DR: The first application of silicon carbide in high power pulsed amplifiers at UHF and S-band frequencies is described in this article, where the authors present an overview of SiC electronic properties, current status of the bulk and epitaxial material growth, and characteristics of recently fabricated devices in some of the above device categories.
67
S-band operation of SiC power MESFET with 20 W (4.4 W/mm) output power and 60% PAE
H. G. Henry,G. Augustine,G. C. DeSalvo,R.C. Brooks,R.R. Barron,J.D. Oliver,A.W. Morse,B.W. Veasel,P.M. Esker,Rowland C. Clarke +9 more
TL;DR: In this article, an undoped "spacer" layer on top of a SiC MESFET is used to form a "buried-channel" structure where the active current carrying channel is removed from the surface.
59
High power 4H-SiC static induction transistors
R.R. Siergiej,Rowland C. Clarke,A.K. Aganval,C.D. Brandt,A.A. Burk,A.W. Morse,P.A. Orphanos +6 more
- 10 Dec 1995
TL;DR: In this article, static induction transistors have been demonstrated in 4H-SiC SITs with a maximum output power of 225 W at 600 MHz, a power added efficiency of 47%, and a gain of 8.7 dB.
29
Recent advances in high temperature, high frequency SiC devices
Rowland C. Clarke,C.D. Brandt,S. Sriram,R.R. Siergiej,A.W. Morse,A.K. Agarwal,L.-S. Chen,V. Balakrishna,A.A. Burk +8 more
- 22 Feb 1998
TL;DR: In this paper, a very uniform planetary multi-wafer epitaxial layer growth on these wafers is described, in which specular epitaxia layers have been obtained with growth rates of 3-5 /spl mu/m/hr, exhibiting unintentional n-type doping of /spl sim/1/spl times/10/sup 15/ cm/sup -3/, and associated room temperature Hall mobilities of /pl sim/1000 cm/Sup 2//Vs.
25
Application of high power silicon carbide transistors at radar frequencies
A.W. Morse,P.M. Esker,Rowland C. Clarke,C.D. Brandt,R.R. Siergiej,Anant K. Agarwal +5 more
- 17 Jun 1996
TL;DR: In this paper, the characteristics of recently fabricated devices in silicon carbide, and the first application of silicon carbides transistors in high power pulsed amplifiers at radar frequencies are described.
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