G. Augustine
Westinghouse Electric
8 Papers
80 Citations
G. Augustine is an academic researcher from Westinghouse Electric. The author has contributed to research in topics: Silicon carbide & MESFET. The author has an hindex of 5, co-authored 8 publications.
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Papers
•Proceedings Article
SiC electronics
A.K. Agarwal,G. Augustine,V. Balakrishna,C.D. Brandt,A.A. Burk,L.-S. Chen,Rowland C. Clarke,P.M. Esker,H.M. Hobgood,Richard H. Hopkins,A.W. Morse,L.B. Rowland,S. Seshadri,R.R. Siergiej,T.J. Smith,S. Sriram +15 more
- 01 Jan 1996
TL;DR: The first application of silicon carbide in high power pulsed amplifiers at UHF and S-band frequencies is described in this article, where the authors present an overview of SiC electronic properties, current status of the bulk and epitaxial material growth, and characteristics of recently fabricated devices in some of the above device categories.
67
High efficiency operation of 6-H SiC MESFETs at 6 GHz
S. Sriram,R.R. Barron,A.W. Morse,T.J. Smith,G. Augustine,A.A. Burk,Rowland C. Clarke,R.C. Glass,H.M. Hobgood,P.A. Orphanos,R.R. Siergiej,C.D. Brandt,M.C. Driver,R.H. Hopkins +13 more
- 19 Jun 1995
TL;DR: In this article, the authors demonstrate for the first time high efficiency RF power operation at 6 GHz using SiC MESFETs and obtain power output of 35 W, with 45.5% power added efficiency at 6GHz from a 6-H SiC micro-EMFET operating at a drain bias of 40 V. The corresponding power density is 1.75 W/mm.
12
Molecular beam epitaxy growth and characterization of GaN and AlxGa1−xN on 6H‐SiC
S. Sinharoy,G. Augustine,L.B. Rowland,Anant K. Agarwal,R. L. Messham,M.C. Driver,Richard H. Hopkins +6 more
TL;DR: In this article, the growth of undoped and doped GaN and AlGaN films on both on-axis and 3.5° off-axis 6H•SiC substrates was investigated.
11
Plasma-Assisted MBE of GaN and AlGaN on 6H SiC(0001)
S. Sinharoy,Anant K. Agarwal,G. Augustine,L.B. Rowland,R. L. Messham,M.C. Driver,Richard H. Hopkins +6 more
TL;DR: In this paper, the growth of undoped and doped GaN and AlGaN films on off-axis 6H SiC substrates was investigated using plasma-assisted molecular beam epitaxy (MBE).
6
Vapor phase 6H and 4H SiC epitaxy for high-speed devices
L.B. Rowland,A.A. Burk,Rowland C. Clarke,R.R. Siergiej,S. Sriram,G. Augustine,H.M. Hobgood,M.C. Driver +7 more
- 07 Aug 1995
TL;DR: In this article, a homoepitaxial 6H and 4H-SiC has been grown with near specular morphology, background doping levels of less than 1/spl times/10/sup 14/ cm/sup -3/, and controlled n-and p-type doping from less than 5/spltimes/ 10/sup 15/cm/sup-3/ to greater than 1 /spl times /10/Sup 19/ cm/$3/
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