Patent
Method and system for optimizing illumination in an optical photolithography projection imaging system
Joseph Edward Gortych,Alan E. Rosenbluth +1 more
- 06 Jun 1995
83
TL;DR: In this paper, a method and system for finding and setting the illumination in a projection imaging system to achieve optimum imaging is presented, where the global optimum illumination is found based on the desired characteristics of the image irradiance distribution as embodied in a target aerial image.
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Abstract: A method and system for finding and setting the illumination in a projection imaging system to achieve optimum imaging. The global optimum illumination is found based on the desired characteristics of the image irradiance distribution as embodied in a target aerial image. The system employs an optimization algorithm that finds the best combination of projected mask images, each such image formed by directing source illumination to selected regions (e.g., pixels) in the entrance pupil (each such region location and size corresponding to a nominal illumination direction and a particular range of angles about the nominal). The optimum illumination is defined as that illumination which produces an aerial image closest to the predefined target aerial image. The system then sets the illuminator to produce the source distribution necessary to achieve this optimal illumination. The set of aerial images created by addressing the available entrance pupil regions with illumination is determined either by numerical calculation or by scanning and recording the individual aerial images produced by the projection system.
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Citations
Optimum mask and source patterns to print a given shape
Alan E. Rosenbluth,Scott J. Bukofsky,Michael S. Hibbs,Kafai Lai,Antoinette F. Molless,Rama Nand Singh,Alfred K. K. Wong +6 more
- 14 Sep 2001
TL;DR: In this paper, the authors developed an algorithm that can optimize mask and source without using a starting design, where the optimized mask will often consist of novel sets of shapes that are quite different in layout from the target IC patterns.
Patent
System and method for lithography simulation
Jun Ye,Yen-Wen Lu,Yu Cao,Luoqi Chen,Xun Chen +4 more
- 07 Sep 2004
TL;DR: In this article, the authors present a system and method that accelerates lithography simulation, inspection, characterization and evaluation of the optical characteristics and properties, as well as the effects and/or interactions of lithographic systems and processing techniques.
265
Optimum mask and source patterns to print a given shape
Alan E. Rosenbluth,Scott J. Bukofsky,Carlos A. Fonseca,Michael S. Hibbs,Kafai Lai,Antoinette F. Molless,Rama Nand Singh,Alfred K. K. Wong +7 more
TL;DR: This work has developed an algorithm that can optimize mask and source without using a starting design, and can only optimize two-dimensional patterns over small fields, though patterns in two separate fields can be jointly optimized for maximum common window under a single source.
Patent
Method and apparatus for facilitating process-compliant layout optimization
Michel Luc Cote,Philippe Hurat,Christophe Pierrat +2 more
- 05 Apr 2002
TL;DR: In this paper, the authors present a system that simulates effects of a manufacturing process on an integrated circuit to enhance process latitude and/or reduce layout size, and the system then identifies problem areas in the simulated printed image that do not meet a specification.
192
Patent
Apparatus and method for breaking up and merging polygons
Abdurrahman Sezginer,Roy Prasad +1 more
- 13 Aug 2005
TL;DR: In this article, a method of modifying polygons in a data set maskless or mask-based optical projection lithography is proposed, which includes: 1) mapping the data set to a figure-of-demerit, 2) moving individual polygon edges to decrease the figure-ofthe-dimention, and 3) disrupting the set of polygons to enable a further decrease in the figure of the demerit.
169
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Patent
Projection exposure apparatus
Hiroyuki Suzuki,Osamu Furukawa +1 more
- 14 Jul 1993
TL;DR: A projection exposure apparatus has a structure in which the deviation in a focusing direction between a portion on a wafer which a focus sensor detects during exposure and a desired portion in a shot area is detected, and an offset corresponding to the deviation detected is applied to the focus sensor as discussed by the authors.
161
Patent
Method for fine-line interferometric lithography
Steven R. J. Brueck,Saleem H. Zaidi,An-Shyang Chu +2 more
- 16 Sep 1992
TL;DR: In microelectronic processing, the method of producing complex, two-dimensional patterns on a photosensitive layer with dimensions in the extreme submicron range was proposed in this paper.
130
Patent
Optical focus phase shift test pattern, monitoring system and process
Timothy A. Brunner,Michael S. Hibbs,Barbara Bates Peck,Christopher Alan Spence +3 more
- 28 Oct 1992
TL;DR: In this paper, a photolithography mask structure with a novel optical focus test pattern is described, where the mask structure has a non-phase-shifted, transparent substrate and includes a phase shifter of other than 180° disposed between spaced, parallel opposing lines such that an alternating pattern is defined transverse said parallel lines.
117