Journal Article10.1038/NNANO.2012.240
Memristive devices for computing
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TL;DR: The performance requirements for computing with memristive devices are examined and how the outstanding challenges could be met are examined.
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Abstract: Memristive devices are electrical resistance switches that can retain a state of internal resistance based on the history of applied voltage and current. These devices can store and process information, and offer several key performance characteristics that exceed conventional integrated circuit technology. An important class of memristive devices are two-terminal resistance switches based on ionic motion, which are built from a simple conductor/insulator/conductor thin-film stack. These devices were originally conceived in the late 1960s and recent progress has led to fast, low-energy, high-endurance devices that can be scaled down to less than 10 nm and stacked in three dimensions. However, the underlying device mechanisms remain unclear, which is a significant barrier to their widespread application. Here, we review recent progress in the development and understanding of memristive devices. We also examine the performance requirements for computing with memristive devices and detail how the outstanding challenges could be met.
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Citations
Confining vertical conducting filament for reliable resistive switching by using a Au-probe tip as the top electrode for epitaxial brownmillerite oxide memristive device.
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Rectification-Regulated Memristive Characteristics in Electron-Type CuPc-Based Element for Electrical Synapse
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TL;DR: In this paper, a new class of organic memristor with rectifying characteristics is proposed, which is characterized by smooth consecutive changes, which are illustrated in detail by the adjustable device energy levels and relevant carrier processes.
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HyVE: Hybrid vertex-edge memory hierarchy for energy-efficient graph processing
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Frequency-dependent learning achieved using semiconducting polymer/electrolyte composite cells.
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References
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Memristor-The missing circuit element
TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
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Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Abstract: This review article introduces resistive switching processes that are being considered for nanoelectronic nonvolatile memories. The three main classes are based on an electrochemical metallization mechanism, a valence change mechanism, and a thermochemical mechanism, respectively. The current understanding of the microscopic mechanisms is discussed and the scaling potential is outlined..
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Nanoionics-based resistive switching memories
TL;DR: A coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms into metal-insulator-metal systems, and a brief look into molecular switching systems is taken.
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Nanoscale Memristor Device as Synapse in Neuromorphic Systems
TL;DR: A nanoscale silicon-based memristor device is experimentally demonstrated and it is shown that a hybrid system composed of complementary metal-oxide semiconductor neurons and Memristor synapses can support important synaptic functions such as spike timing dependent plasticity.