An integrated optical semiconductor device includes a substrate including first and second regions; a plurality of light receiving devices disposed in the second region; a multimode interference coupler disposed in the first region, the multimode interference coupler including output optical waveguides optically coupled to the corresponding light receiving devices; first and second conductive layers disposed on a back surface of the substrate in the first and second regions, respectively; and a plurality of capacitors disposed in the second region, each of the capacitors including a first electrode connected to one of the light receiving devices and a second electrode connected to the second conductive layer. The second conductive layer is electrically insulated from the first conductive layer. The substrate is made of a semi-insulating semiconductor. The multimode interference coupler and the light receiving devices include the same n-type semiconductor layer disposed on a principal surface of the substrate.

Integrated optical semiconductor device and integrated optical semiconductor device assembly

An optical receiving circuit which suppresses a characteristic deterioration due to a wiring between a PD and a TIA and a method for manufacturing the optical receiving circuit are provided. A optical receiving circuit ( 300 ) comprises a photodiode ( 302 ), and a transimpedance amplifier ( 308 ) that supplies an electrical power source to the photodiode ( 302 ). The characteristic impedance of a wiring between the anode of the photodiode ( 302 ) and the transimpedance amplifier ( 308 ) is higher than the characteristic impedance of a wiring between the cathode of the photodiode ( 302 ) and the transimpedance amplifier ( 308 ).

Optical receiving circuit and method for manufacturing the same

A dispersion liquid including one of thiophene and derivatives thereof, a polyanion, and a solvent is prepared. The dispersion liquid is mixed with a first oxidizing agent producing iron ions so as to oxidatively polymerize the one of thiophene and derivatives thereof. At the completion of the polymerization, the conductive polymer microparticle dispersion contains trivalent iron ions with a concentration of 3 to 30 parts by weight, inclusive, with respect to 100 parts by weight of the conductive polymer microparticle.

Method of producing conductive polymer particle dispersion, and method of producing electrolytic capacitor using said conductive polymer particle dispersion

At least one monomer selected from thiophenes and their derivatives is oxidatively polymerized with an oxidizing agent in a solvent mainly composed of water in the presence of a polyanion as a dopant. This conductive polymer microparticle dispersion is manufactured by using, as the polyanion, a polystyrene sulfonic acid and/or its salt each having a Hazen color number in the range of 10 to 1000, inclusive, when the hue of a 2% aqueous solution thereof is measured by the APHA method.

Method of manufacturing conductive polymer microparticle dispersion and method of manufacturing electrolytic capacitor containing the conductive polymer microparticle dispersion

A light-receiving device has a semiconductor substrate that includes a first pixel region that has a first thickness and a second pixel region that has a second thickness less than the first thickness. It has a plurality of first photoelectric conversion elements formed in the first pixel region and a first electrode where their outputs are supplied thereto. It has a plurality of photoelectric conversion elements formed in the second pixel region and a second electrode where their outputs are supplied thereto. It has a common electrode for the first and second photoelectric conversion elements.

Light-receiving device and photo-detection apparatus with such light-receiving device

PROBLEM TO BE SOLVED: To obtain good frequency characteristics while reducing the number of steps required for chip mounting, in an optical receiving circuit.SOLUTION: A ground pad 24 formed on an upper surface of a TIA chip 20 connected to a light receiving element 11 is connected via a bonding wire 54 to a ground pad 14 formed on an upper surface of a PD submount 10 and connected to a ground potential.

Optical receiving circuit

PROBLEM TO BE SOLVED: To provide a semiconductor photodetector which uses a reflection mirror to attain high sensitivity while achieving high efficiency without deteriorating the efficiency in a state that the semiconductor photodetector is easily mounted without increasing the costs.SOLUTION: A semiconductor photodetector includes: an etching stop layer 102 formed on a surface of a substrate 101; a buffer layer 103 formed on the etching stop layer 102; a light absorption layer 104 formed on the buffer layer 103; and a contact layer 105 formed on the light absorption layer 104. The light absorption layer 104 and the contact layer 105 are processed into a so-called mesa shape thereby forming a pillar part. The semiconductor photodetector includes an opening 107 which is formed on a rear surface of the substrate 101 so as to correspond to a formation region of the pillar part and further includes a dielectric layer 108 and a metal layer 109 in the opening part 107 to form a reflection mirror.

Semiconductor photodetector and manufacturing method of the same

PROBLEM TO BE SOLVED: To increase the GBP of an avalanche photodiode to achieve a furthermore high-gain and broad-band operation.SOLUTION: The avalanche photodiode includes a junction metal layer 107 formed between an electric field control layer 105 and a light absorption layer 106. The junction metal layer 107 has a thickness of the length of the average free path of electrons or less. A metal layer formed of Au and having a layer thickness of several nm is formed on each surface of an interface layer 110 and the electric field control layer 105 which are formed on different substrates, respectively. Then, the formed metal layers are directly joined to each other and the interface layer 110 and the electric field control layer 105 are brought into a state where the layers are stuck via the junction metal layer 107.

Avalanche photodiode and method for manufacturing the same

PROBLEM TO BE SOLVED: To provide an optical receiving device having optical excess input resistivity while securing optical input overload characteristics by solving the problem that since the use of an optical amplifier in this optical communication system results in the rising of the rays of light whose light intensity is strong in an extremely short time and the generation of an optical surge having the time width of msec order, it is necessary to secure "optical excessive input resistivity" against optical surge in the optical receiving device to prevent any influence from being given to an APD or a pre-amplifier integrated circuit. SOLUTION: This optical receiving device is provided with an avalanche photo-diode for receiving an optical signal, and for outputting an electric signal and a current saturation type semiconductor variable resistance element between whose first terminal and second terminal currents are running, where the cathode or anode of the avalanche photo-diode is connected to the first terminal of the semiconductor variable resistance element. COPYRIGHT: (C)2009,JPO&INPIT

Optical receiving device

PROBLEM TO BE SOLVED: To provide a PD array having a plurality of light-receiving parts which can reduce cross talk to a further degree; and provide a method of manufacturing a PD array simpler and at low cost.SOLUTION: An optical semiconductor device of the present embodiment comprises: an optical semiconductor element in which a plurality of optical elements each composed of a semiconductor junction layer formed in a semiconductor composite layer laminated on a semiconductor substrate; and a base plate joined to the semiconductor substrate, in which a groove piercing the semiconductor composite layer and the semiconductor substrate to reach the base plate is formed every between neighboring optical elements formed in the optical semiconductor element.

Optical semiconductor device and optical semiconductor device manufacturing method

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Optical receiving circuit

Semiconductor photodetector and manufacturing method of the same

Avalanche photodiode and method for manufacturing the same

Optical receiving device

Optical semiconductor device and optical semiconductor device manufacturing method

好史 村本

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Papers

Optical receiving circuit

Semiconductor photodetector and manufacturing method of the same

Avalanche photodiode and method for manufacturing the same

Optical receiving device

Optical semiconductor device and optical semiconductor device manufacturing method

好史村本