Detlev Grützmacher
Forschungszentrum Jülich
449 Papers
2.9K Citations
Detlev Grützmacher is an academic researcher from Forschungszentrum Jülich. The author has contributed to research in topics: Quantum well & Molecular beam epitaxy. The author has an hindex of 45, co-authored 425 publications. Previous affiliations of Detlev Grützmacher include Johannes Kepler University of Linz & Paul Scherrer Institute.
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Papers
MOVPE of n-doped GaAs and modulation doped GaAs/AlGaAs nanowires
K. Sladek,V. Klinger,J. Wensorra,Masashi Akabori,Masashi Akabori,Hilde Hardtdegen,Detlev Grützmacher +6 more
TL;DR: In this article, the influence of mask design on the growth of GaAs nanowires was investigated and it was found that the diameter and length of the core structures strongly depend on the arsenic partial pressure and growth temperature as well as mask design.
Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors
Stephan Wirths,A. T. Tiedemann,Zoran Ikonic,Paul Harrison,Bernhard Holländer,Toma Stoica,Gregor Mussler,Maksym Myronov,J.M. Hartmann,Detlev Grützmacher,Dan Buca,S. Mantl +11 more
TL;DR: In this paper, the authors proposed a heterostructure design for tunnel field effect transistors with two low direct bandgap group IV compounds, GeSn and highly tensely strained Ge in combination with ternary SiGeSn alloy.
Thermoelectric Efficiency of Epitaxial GeSn Alloys for Integrated Si-Based Applications: Assessing the Lattice Thermal Conductivity by Raman Thermometry
Davide Spirito,Nils von den Driesch,C. L. Manganelli,Marvin Hartwig Zoellner,Agnieszka Anna Corley-Wiciak,Zoran Ikonic,Toma Stoica,Detlev Grützmacher,Dan Buca,Giovanni Capellini,Giovanni Capellini +10 more
- 07 Jul 2021
TL;DR: In this paper, the potential of GeSn/Ge layers, a group IV material system, as TE material for low-grade heat conversion was investigated, and an analytical model based on Raman thermometry and heat transport model was developed to predict thermoelectric performances.
Modulation-doped SixGe1?x/Si shells electrically isolated from conductive substrates
Yu.S. Yukecheva,Gregor Mussler,Gregor Mussler,V. Shushunova,A. Weber,E Deckardt,V. Ya. Prinz,Detlev Grützmacher,Detlev Grützmacher +8 more
TL;DR: In this article, the formation of tubes and helices with micron and submicron radii of curvature formed from modulation-doped SixGe1−x/Si heterostructures is presented.
Chalcogenide-based van der Waals epitaxy: Interface conductivity of tellurium on Si(111)
Felix Lüpke,Sven Just,Gustav Bihlmayer,Martin Lanius,Martina Luysberg,Jiří Doležal,Elmar Neumann,Vasily Cherepanov,Ivan Ošt’ádal,Gregor Mussler,Detlev Grützmacher,Bert Voigtländer +11 more
TL;DR: In this article, a combined experimental and theoretical analysis of a Te rich interface layer which represents a template for chalcogenide-based van der Waals epitaxy on Si(111) is presented.