This review will focus on the synthesis, arrangement, structural assembly, for current and future applications, of 1D nanomaterials (tubes, wires, rods) in 2D and 3D ordered arrangements. The ability to synthesize and arrange one dimensional nanomaterials into ordered 2D or 3D micro or macro sized structures is of utmost importance in developing new devices and applications of these materials. Micro and macro sized architectures based on such 1D nanomaterials (e.g. tubes, wires, rods) provide a platform to integrate nanostructures at a larger and thus manageable scale into high performance electronic devices like field effect transistors, as chemo- and biosensors, catalysts, or in energy material applications. Carbon based, metal oxide and metal based 1D arranged materials as well as hybrid or composite 1D materials of the latter provide a broad materials platform, offering a perspective for new entries into fascinating structures and future applications of such assembled architectures. These architectures allow bridging the gap between 1D nanostructures and the micro and macro world and are the basis for an assembly of 1D materials into higher hierarchy domains. This critical review is intended to provide an interesting starting point to view the current state of the art and show perspectives for future developments in this field. The emphasis is on selected nanomaterials and the possibilities for building three dimensional arrays starting from one dimensional building blocks. Carbon nanotubes, metal oxide nanotubes and nanowires (e.g. ZnO, TiO2, V2O5, Cu2O, NiO, Fe2O3), silicon and germanium nanowires, and group III–V or II–VI based 1D semiconductor nanostructures like GaS and GaN, pure metals as well as 1D hybrid materials and their higher organized architectures (foremost in 3D) will be focussed. These materials have been the most intensively studied within the last 5–10 years with respect to nano–micro integration aspects and their functional and application oriented properties. The critical review should be interesting for a broader scientific community (chemists, physicists, material scientists) interested in synthetic and functional material aspects of 1D materials as well as their integration into next higher organized architectures.

Assembly of one dimensional inorganic nanostructures into functional 2D and 3D architectures. Synthesis, arrangement and functionality

We report growth by molecular beam epitaxy and structural characterization of gallium-nucleated GaAs nanowires on silicon. The influences of growth temperature and V/III ratio are investigated and compared in the case of oxide-covered and oxide-free substrates. We demonstrate a precise positioning process for Ga-nucleated GaAs nanowires using a hole array in a dielectric layer thermally grown on silicon. Crystal quality is analyzed by high resolution transmission electron microscopy. Crystal structure evolves from pure zinc blende to pure wurtzite along a single nanowire, with a transition region.

https://iopscience.iop.org/article/10.1088/0957-4484/21/38/385602/pdf

Gold-free growth of GaAs nanowires on silicon: arrays and polytypism

A cornerstone in the successful application of semiconductor nanowire devices is controlled impurity doping. In this review article, we discuss the key results in the field of semiconductor nanowire doping. Considerable development has recently taken place in this field, and half of the references in this review are less than 3 years old. We present a simple model for dopant incorporation during in situ doping of particle-assisted growth of nanowires. The effects of doping on nanowire growth are thoroughly discussed since many investigators have seen much stronger and more complex effects than those observed in thin-film growth. We also give an overview of methods of characterizing doping in nanowires since these in many ways define the boundaries of our current understanding.

/pdf/doping-of-semiconductor-nanowires-5gcc7nty6x.pdf

Doping of semiconductor nanowires

We review the position-controlled growth of III-V nanowires (NWs) by selective-area metal-organic vapor-phase epitaxy (SA-MOVPE) This epitaxial technique enables the positioning of the vertical NWs on (111) oriented surfaces with lithographic techniques Core-shell structures have also been achieved by controlling the growth mode during SA-MOVPE The core-shell III-V NW-based devices such as light-emitting diodes, photovoltaic cells, and vertical surrounding-gate transistors are discussed in this article Nanometer-scale growth also enabled the integration of III-V NWs on Si regardless of lattice mismatches These demonstrated achievements should have broad applications in laser diodes, photodiodes, and high-electron mobility transistors with functionality on Si not made possible with conventional Si-CMOS techniques

https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S0884291411001038

Selective-area growth of III-V nanowires and their applications

We investigated the transport properties of GaAs/InAs core/shell nanowires grown by molecular beam epitaxy. Owing to the band alignment between GaAs and InAs, electrons are accumulated in the InAs shell as long as the shell thickness exceeds 12?nm. By performing simulations using a Schr?dinger?Poisson solver, it is confirmed that confined states are present in the InAs shell, which are depleted if the shell thickness is below a threshold value. The existence of a tubular-shaped conductor is proved by performing magnetoconductance measurements at low temperatures. Here, flux periodic conductance oscillations are observed which can be attributed to transport in one-dimensional channels based on angular momentum states.

http://iopscience.iop.org/article/10.1088/0957-4484/24/3/035203/pdf

Realization of nanoscaled tubular conductors by means of GaAs/InAs core/shell nanowires.

MOVPE of n-doped GaAs and modulation doped GaAs/AlGaAs nanowires

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MOVPE of n-doped GaAs and modulation doped GaAs/AlGaAs nanowires