Anton J. Bauer
Fraunhofer Society
184 Papers
970 Citations
Anton J. Bauer is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Dielectric & Oxide. The author has an hindex of 21, co-authored 184 publications. Previous affiliations of Anton J. Bauer include University of Erlangen-Nuremberg.
Chat about Author
Papers
Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics
V. Yanev,Mathias Rommel,Martin Lemberger,S. Petersen,B. Amon,Tobias Erlbacher,Anton J. Bauer,Heiner Ryssel,Albena Paskaleva,Wenke Weinreich,Christian Fachmann,Johannes Heitmann,Uwe Schroeder +12 more
TL;DR: In this article, tunneling atomic-force microscopy (TUNA) was used for the characterization of morphology in thin high-k dielectric films on a nanoscale.
85
Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs
Viktoryia Uhnevionak,Alexander Burenkov,Christian Strenger,Guillermo P. Ortiz,Eléna Bedel-Pereira,Vincent Mortet,Fuccio Cristiano,Anton J. Bauer,Peter Pichler +8 more
TL;DR: In this article, the effects of doping concentration and temperature upon the transport properties in the channel of lateral n-channel SiC MOSFETs have been studied using current-voltage and Hall-effect measurements.
72
Impact of interface variations on J-V and C-V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1-x)AlxO2 films
Wenke Weinreich,R. Reiche,M. Lemberger,G. Jegert,Johannes Müller,L. Wilde,S. Teichert,Johannes Heitmann,Elke Erben,Lars Oberbeck,Uwe Schröder,Anton J. Bauer,Heiner Ryssel +12 more
TL;DR: In this article, the polarities in J-V and C-V characteristics of symmetrical MIM capacitors with amorphous and crystalline Zr" ("1"-"x")Al"xO"2 films and TiN electrodes are evaluated.
71
Detailed leakage current analysis of metal–insulator–metal capacitors with ZrO2, ZrO2/SiO2/ZrO2, and ZrO2/Al2O3/ZrO2 as dielectric and TiN electrodes
Wenke Weinreich,A. Shariq,Konrad Seidel,Jonas Sundqvist,Albena Paskaleva,Martin Lemberger,Anton J. Bauer +6 more
TL;DR: In this article, the C-V and J-V characteristics of ZrO2 metal-insulator-metal capacitors with TiN electrodes are analyzed in dependence on the O3 pulse time revealing the optimum atomic layer deposition process conditions.
60
Structural properties of as deposited and annealed ZrO2 influenced by atomic layer deposition, substrate, and doping
Wenke Weinreich,L. Wilde,Johannes Müller,Jonas Sundqvist,Elke Erben,Johannes Heitmann,Martin Lemberger,Anton J. Bauer +7 more
TL;DR: In this article, the structural properties of ZrO2 films were investigated in terms of surface roughness and surface stress after the atomic layer deposition (ALD) in a TiN-substrate.
52