Induced high electron mobility transistor

Abstract: Nanoscale Kelvin probe force microscopy and depth-resolved cathodoluminescence spectroscopy reveal an electronic defect evolution inside operating AlGaN/GaN high electron mobility transistors with degradation under electric-field-induced stress. Off-state electrical stress results in micron-scale areas within the extrinsic drain expanding and decreasing in electric potential, midgap defects increasing by orders-of-magnitude at the AlGaN layer, and local Fermi levels lowering as gate-drain voltages increase above a characteristic stress threshold. The pronounced onset of defect formation, Fermi level movement, and transistor degradation at the threshold gate-drain voltage of J. A. del Alamo and J. Joh [Microelectron. Reliab. 49, 1200 (2009)] is consistent with crystal deformation and supports the inverse piezoelectric model of high electron mobility transistor degradation.

Abstract: A physics-based electron-mobility model including remote Coulomb scattering by fixed charge in high- k dielectric and remote interface-roughness scattering originated from the fluctuation of high- k /interlayer interface is established for InGaAs MOSFET, and the validity of the model is confirmed by good agreement between simulated results and experimental data. Effects of structural and physical parameters of the devices on the electron mobility are analyzed using the model, and the results show that smoother high- k /interlayer interface, reasonably high permittivities for the interlayer and high- k dielectric, and less fixed charge in the high- k dielectric are desired to enhance the electron mobility and simultaneously keep further scaling of equivalent oxide thickness.

Abstract: Electron mobility is one of the most-debated key attributes of low-dimensional electron systems emerging at complex oxide heterointerfaces. However, a common understanding of how electron mobility can be optimized in these systems has not been achieved so far. Here, we discuss a novel approach for achieving a systematic increase in electron mobility in polar/nonpolar perovskite interfaces by suppressing the thermodynamically required defect formation at the nanoscale. We discuss the transport properties of electron gases established at interfaces between SrTiO3 and various polar perovskites [LaAlO3, NdGaO3, and (La,Sr)(Al,Ta)O3], allowing for the individual variation of epitaxial strain and charge transfer among these epitaxial interfaces. As we show, the reduced charge transfer at (La,Sr)(Al,Ta)O3/SrTiO3 interfaces yields a systematic increase in electron mobility, while the reduced epitaxial strain has only minor impact. As thermodynamic continuum simulations suggest, the charge transfer across these in...

Abstract: A novel mobility model for electrons in the Si-MOS inversion layer is proposed on the basis of two-dimensional degenerate electron gas physics The mobility is found to be affected by Pauli's exclusion principle and the Fermi-Dirac distribution function The universal relation between mobility and effective field strength in the normal direction can be consistently explained by the model, including its temperature dependence >