Patent
Solid-state imaging device and electronic apparatus
Masuda Yoshiaki,Naoyuki Sato +1 more
- 19 May 2014
3
TL;DR: In this paper, a solid-state imaging device that is designed to reduce reflection of incident light at the sidewall surface of the light blocking layer of each phase difference detection pixel is presented.
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Abstract: The present disclosure relates to a solid-state imaging device that is designed to reduce reflection of incident light at the sidewall surface of the light blocking layer of each phase difference detection pixel, and to an electronic apparatus. A solid-state imaging device according to one aspect of the present disclosure includes: a normal pixel for generating a pixel signal; and a phase difference detection pixel for generating a phase difference signal for image plane phase difference AF. In this solid-state imaging device, the normal pixel and the phase difference detection pixel each include a photoelectric conversion layer and a lens for gathering incident light onto the photoelectric conversion layer, the phase difference detection pixel includes a light blocking layer having an apertural portion with an aperture deviating from the optical axis of the lens, and an antireflection portion that prevents reflection of the incident light gathered by the lens unit is formed on the light blocking layer. The present disclosure can be applied to back-illuminated CISs.
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Citations
Patent
Solid-state imaging device and electronic device
Hideo Kido,Masahiro Tada,Takahiro Toyoshima,Y. Tateshita,Hikaru Iwata +4 more
- 17 Jun 2013
TL;DR: In this paper, the authors provided a solid-state imaging device including a plurality of photoelectric conversion units, a signal line that is wired along the plurality of photonic conversion units and an output transistor that is electrically connected to each of the PHE conversion units.
4
Patent
Imaging device and imaging apparatus
Shibuta Hirokazu
- 16 Apr 2020
TL;DR: In this paper, an imaging device according to an embodiment of the present disclosure includes: a pixel region in which a plurality of pixels is disposed; a surrounding region provided around the pixel region; an organic photoelectric conversion layer continuously provided from the pixel regions to a portion of the surrounding region; a black layer provided on the electrically-conducive layer.
1
Patent
Solid-state imaging device with phase difference detection pixel and electronic apparatus
Masuda Yoshiaki,Sato Naoyuki +1 more
- 11 May 2021
TL;DR: In this article, the authors proposed a solid-state imaging device for reduction of reflection of incident light at a sidewall surface of a light blocking layer of each phase difference detection pixel.
References
Patent
Photoelectric conversion device and imaging system
Masahiro Kobayashi,Takafumi Kishi,Yuichiro Yamashita +2 more
- 01 Oct 2008
TL;DR: In this paper, a photoelectric conversion device consisting of a plurality of photo-sensing surface, insulation films, and boundary portions, each of the boundary portions defines a boundary between the adjacent light-guiding portions and is formed of a material lower in refractive index than a material that forms the plurality of light-guide portions.
220
Patent
X-y address type solid state image pickup device and method of producing the same
Ryoji Suzuki,Keiji Mabuchi,Tomonori Mori +2 more
- 03 Jul 2012
TL;DR: In this article, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer.
135
Patent
Semiconductor device and method of manufacturing the same, and electronic apparatus
Kazuichiro Itonaga,Machiko Horiike +1 more
- 08 Dec 2010
TL;DR: In this paper, a semiconductor device comprising a first semiconductor section including a first wiring layer at one side of the device, a second semiconductor layer including a second wiring layer on the other side, is described.
106
Patent
Solid-state image sensing device and camera system using the same
Mahito Shinohara,Shunsuke Inoue +1 more
- 23 Jun 2008
TL;DR: In this paper, the authors proposed a solid-state image sensing device consisting of a photodiode, a first transistor, and a second transistor, where the first transistor has a first-conductivity-type drain region formed in the second-conductive-type semiconductor region to transfer signal charge to the drain region.
88
Patent
Black mask, color filter and liquid crystal display
Kazuaki Yoshida
- 03 Nov 1998
TL;DR: A black mask as discussed by the authors consists of a first and a second antireflection films each comprising oxide, nitride, carbide, oxide nitride and oxide carbide of at least one kind of metal selected from the group consisting of chromium, molybdenum, tungsten, nickel and germanium, and said films each having a different composition.
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