Patent
Silicon etch with passivation using plasma enhanced oxidation
Jaroslaw W. Winniczek,Robert P. Chebi +1 more
- 23 Oct 2008
154
TL;DR: In this article, a method and apparatus for etching a silicon layer through a patterned mask formed thereon is described, and features are etched into the silicon layer using the plasma.
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Abstract: A method and apparatus for etching a silicon layer through a patterned mask formed thereon are provided. The silicon layer is placed in an etch chamber. An etch gas comprising a fluorine containing gas and an oxygen and hydrogen containing gas is provided into the etch chamber. A plasma is generated from the etch gas and features are etched into the silicon layer using the plasma. The etch gas is then stopped. The plasma may contain OH radicals.
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Citations
Patent
Semiconductor processing system and methods using capacitively coupled plasma
Jang-Gyoo Yang,Matthew L. Miller,Xinglong Chen,Kien N. Chuc,Qiwei Liang,Shankar Venkataraman,Dmitry Lubomirsky +6 more
- 20 Dec 2011
TL;DR: In this paper, a capacitively coupled plasma (CCP) unit is described inside a process chamber, and a pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.
236
Patent
Semiconductor processing systems having multiple plasma configurations
Dmitry Lubomirsky,Xinglong Chen,Shankar Venkataraman +2 more
- 08 Mar 2013
TL;DR: In this paper, the authors describe a system that includes a first plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access.
235
Patent
Methods for etch of metal and metal-oxide films
Jingchun Zhang,Anchuan Wang,Nitin K. Ingle +2 more
- 09 Mar 2012
TL;DR: In this paper, a method of selectively etching a metal-containing film from a substrate comprising a metal containing layer and a silicon oxide layer is proposed, which involves flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber, and applying energy to the fluorinecontaining gas to generate a plasma in the plasma generation area.
194
Patent
Methods for etch of sin films
Jingchun Zhang,Anchuan Wang,Nitin K. Ingle +2 more
- 09 Mar 2012
TL;DR: In this paper, a method of selectively etching silicon nitride from a substrate comprising a silicon oxide layer and a silicon dioxide layer is proposed. But the method requires the substrate to be exposed to the reactive gas in the gas reaction region of the substrate processing chamber.
170
Patent
Processing systems and methods for halide scavenging
Anchuan Wang,Xinglong Chen,Zihui Li,Hiroshi Hamana,Zhijun Chen,Ching-Mei Hsu,Jiayin Huang,Nitin K. Ingle,Dmitry Lubomirsky,Shankar Venkataraman,Randhir Thakur +10 more
- 07 Apr 2014
TL;DR: In this article, a system, chambers, and processes are provided for controlling process defects caused by moisture contamination in a vacuum or controlled environment, and the chambers may include configurations to provide additional processing capabilities in combination chamber designs.
167
References
Patent
Method to improve the step coverage and pattern loading for dielectric films
Mihaela Balseanu,Mei-Yee Shek,Li-Qun Xia,Hichem M'Saad +3 more
- 29 Mar 2007
TL;DR: In this paper, a method of forming a layer on a substrate in a chamber, wherein the substrate has at least one formed feature across its surface, is provided, which includes exposing the substrate to a silicon-containing precursor in the presence of a plasma to deposit a layer, treating the deposited layer with a plasma, and repeating the exposing and treating until a desired thickness of the layer is obtained.
379
Damage‐free selective etching of Si native oxides using NH3/NF3 and SF6/H2O down‐flow etching
TL;DR: In this article, damage-free selective etching of Si native oxides against Si has been achieved by NH3/NF3 and SF6/H2O downflow etching.
155
Patent
Temperature controlling method and apparatus for a plasma processing chamber
Thomas E. Wicker,Joel M. Cook,Robert A. Maraschin,William S. Kennedy,Neil Benjamin +4 more
- 02 Jun 1997
TL;DR: In this paper, an antenna is used to inductively couple RF energy through the dielectric member to energize process gas into a plasma state, and a channel through which a temperature controlling fluid has been cooled by a closed circuit temperature controller is passed.
150
Patent
Plasma processing apparatus
Suzuki Masaki
- 24 Feb 2005
TL;DR: In this paper, the authors proposed a plasma processing apparatus for plasma-processing a substrate, which is suitable for an experiment, a development work and a low production, while reducing troubles about transportation of the substrate in the plasma processing equipment.
135
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