Patent
Semiconductor optical devices and optical modules
Tomonobu Tsuchiya,Tsukuru Ohtoshi +1 more
- 23 Feb 2004
5
TL;DR: In this article, an Al composition ratio-reduced tensile strained quantum well layer was used to improve the long-term reliability of InGaAlAs-based buried type laser.
read more
Abstract: An InGaAlAs-based buried type laser is expected to improve properties of the device, but generates defects at a re-growth interface and is difficult to realize a long-term reliability necessary for optical communication, due to inclusion of Al in an active layer. A semiconductor optical device and an optical module including a package substrate and a semiconductor optical device mounted on the package substrate are provided, whereby there are realized the improvement of device properties and the long-term reliability through the use of an Al composition ratio-reduced tensile strained quantum well layer.
read more
Chat with Paper
AI Agents for this Paper
Find similar papers on Google Scholar, PubMed and Arxiv
Write a critical review of this paper
Analyze citations of this paper to find unaddressed research gaps
Citations
Patent
Optical semiconductor device and method for manufacturing the same
Kan Takada,Tsuyoshi Yamamoto +1 more
- 08 Dec 2011
TL;DR: In this paper, the authors provided an optical semiconductor device having the first optical component including an InP substrate, a lower cladding layer formed on the InP substrategies, an active layer and a barrier layer formed of AlGaInAs.
9
Patent
Semiconductor light-emitting device and a method of fabricating the same
Stewart Edward Hooper,Valerie Bousquet +1 more
- 21 Nov 2006
TL;DR: In this paper, a semiconductor light-emitting device is fabricated in a nitride materials system and has an active region comprising two or more quantum well layers, separated from a neighbouring quantum well layer by a respective barrier layer.
4
Patent
Semiconductor electroluminescent device
Toshihiko Fukamachi,Takashi Shiota,Takeshi Kitatani,Nozomu Yasuhara,Atsushi Nakamura,Mitsuhiro Sawada +5 more
- 09 Nov 2009
TL;DR: In this article, a multiple-quantum well layer of a semiconductor electroluminescent device with an InGaAlAs-based well layer having tensile strain and a barrier layer having high performance and highly reliable in a wide temperature range is presented.
4
Patent
Semiconductor laser incorporating an electron barrier with low aluminum content
Crowley Mark
- 09 Nov 2017
TL;DR: In this paper, a semiconductor laser may include a substrate, a multi quantum well (MQW) active layer, and an electron stopper layer, which is formed from an aluminum gallium indium arsenide phosphide alloy having a first AlxGayIn(1xy)AszP(1-z) composition.
2
Patent
Semiconductor electroluminescent device with a multiple-quantum well layer formed therein
Toshihiko Fukamachi,Takashi Shiota,Takeshi Kitatani,Nozomu Yasuhara,Atsushi Nakamura,Mitsuhiro Sawada +5 more
- 09 Nov 2009
TL;DR: In this article, a multiple-quantum well layer of a semiconductor electroluminescent device with an InGaAlAs-based well layer having tensile strain and a barrier layer having high performance and highly reliable in a wide temperature range is presented.
1
References
Patent
Semiconductor optical device
Kazuhisa Uomi,Shinji Sasaki,Tomonobu Tsuchiya,Naoki Chinone,Tsukuru Ohtoshi +4 more
- 29 May 1990
TL;DR: In this paper, a semiconductor optical device with further improved characteristics is obtained by using a strained-layer superlattice for a portion required to show a great change in refractive index, such as an optical crosspoint switch portion.
53
Patent
Optical semiconductor device
Morimoto Takuo
- 16 Feb 1999
TL;DR: In this article, an active area on an n-substrate 1 of a III-V compound semiconductor is held between an nclad layer on the lower side and a p-closest layer on upper side, and since the area is formed by a selective growth, the laterail side is made two (111) B faces.
31
Patent
Semiconductor optical modulator
Masashige Ishizaka,Hiroyuki Yamazaki +1 more
- 21 May 1997
TL;DR: In this paper, an electroabsorption-type optical modulator is described, which includes a semiconductor substrate; and an array of semiconductor components, including a buffer layer, an optical absorption layer and a cladding layer.
23
High-performance 1.3 μm AlGaInAs/InP strained quantum well lasers grown by organometallic chemical vapor deposition
Rajaram Bhat,C.E. Zah,M.A. Koza,B. Pathak,F.G. Favire,W. Lin,M. C. Wang,N.C. Andreadakis,D. M. Hwang,T.P. Lee,Z. Wang,D. Darby,D. Flanders,J.J. Hsieh +13 more
TL;DR: In this article, the authors show that by using the AlGaInAs/InP instead of the GaInAsP/INP materials system, 1.3 μm lasers with excellent high temperature performance can be fabricated, and report on the optimization of the growth conditions.
23
Patent
Semiconductor optical device having a strained quantum well structure
Akihiko Kasukawa,Michio Ohkubo,Nobumitsu Yamanaka +2 more
- 23 May 1996
TL;DR: In this paper, an ultra-thin intermediate film made of the first III-V compound semiconductor and having a thickness corresponding to from monoatomic layer to ten atomic layer is interposed between each strained well layer and each strained barrier layer.
20