Semiconductor memory structure and method for preparing the same

TL;DR: In this paper, the authors provided a semiconductor memory structure including a substrate including a first isolation structure and at least one active region defined by the first isolations structure, a second isolation structure disposed in the active region, a first buried word line and a second buried digit line disposed in an isolation structure.

Abstract: The present disclosure provides a semiconductor memory structure including a substrate including a first isolation structure and at least one active region defined by the first isolations structure, a second isolation structure disposed in the active region, a first buried word line and a second buried word line disposed in the second isolation structure, and at least one buried digit line disposed in the active region. Topmost portions of the first buried word line and the second buried word line are lower than a top surface of the second isolation structure, and a top surface of the buried digit line is lower than bottom surfaces of the first buried word line and the second buried word line.