Patent
Semiconductor memory device
Tanigawa Takao
- 30 Nov 1992
40
TL;DR: In this paper, an oxide insulating film is formed on a polycrystalline silicon gate electrode and a side wall 6 of oxide film is provided to the side face of the gate electrode.
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Abstract: PURPOSE:To enable a storage electrode contact to be formed in self-alignment with a gate electrode so as to lessen a memory cell, where a stacked capacitor can be secured enough in capacity, in plane area. CONSTITUTION:An oxide insulating film 5 is formed on a polycrystalline silicon gate electrode 4, a side wall 6 of oxide film is provided to the side face of the gate electrode 4, and a side wall 22 of oxide film is formed after a storage electrode contact 9 is bored. The storage electrode contact 9 can be formed with 0mum distant from a gate electrode 4, and as the result, a memory cell can be decreased to about 5mum or below in plane area.
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Citations
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