Patent
Semiconductor laser and its manufacturing method
Minoru Watanabe
- 01 Jun 2000
12
TL;DR: In this paper, the authors proposed a method for manufacturing a semiconductor laser device with two kinds of light sources mounted on the same chip in a monolithic state and at the same time, can be operated by high output for writing to an optical disk.
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Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser that has two kinds of light sources mounted on the same chip in a monolithic state and at the same time, can be operated by high output for writing to an optical disk, and to provide a method for manufacturing the semiconductor laser device. SOLUTION: On the identical semiconductor substrate 1, a first semiconductor laser structure body 8 having a first wavelength band and a second semiconductor laser structure body 15 having a second wavelength band are formed monolithically, and each laser output end face of the first and second semiconductor laser structure bodies 8 and 15 is changed into a disordered state by a common Zn diffusion process for forming window structure, thus obtaining a high output. COPYRIGHT: (C)2001,JPO
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Citations
Patent
Semiconductor laser device and manufacturing method therefor
Kazuhiko Wada,Keisuke Miyazaki,Taiji Morimoto,Yoshiaki Ueda,Masaki Tatsumi +4 more
- 15 Jul 2004
TL;DR: An n-type AlGaAs cladding layer of a first semiconductor laser 39 is constructed of a two-layer structure of a second Al x Ga 1-x As (x=0.500) claddings layer 23 and a first Al X Ga 1 -x As(x= 0.425) clattings layer 24 as discussed by the authors.
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Patent
Semiconductor laser device, semiconductor laser system, optical pickup module and manufacturing for semiconductor laser system
Tsutomu Ukai
- 18 Jul 2007
TL;DR: In this paper, a semiconductor laser device comprises an n-type cladding layer 103 made of n − type (Al 0.3 Ga 0.7 ) 0.5 In 0.6 As, a layered structure in which well layers of undoped GaAs were alternately formed, and a second optical guide layer was added in bottom-to-top order.
11
Patent
Semiconductor laser device and manufacturing method thereof
Takayuki Kashima,Kouji Makita,Kenji Yoshikawa +2 more
- 28 Mar 2006
TL;DR: In this article, a semiconductor laser device of the present invention includes: a substrate, a cladding layer of a first conductivity type formed above one of surfaces of the substrate, an active layer formed above the cladding layers, and having a ridge and a planar portion, a dielectric film formed on a lower portion of a side surface of the ridge and on the planar part.
11
Patent
Monolithic semiconductor laser
Tetsuhiro Tanabe
- 23 Aug 2006
TL;DR: In this paper, the authors disclosed a monolithic semiconductor laser which is provided with an AlGaAs-based semiconductor LM element (10 a ) and an InGaAlP based semiconductor LEM element ( 10 b ) formed on a semiconductor substrate.
8
Patent
Semiconductor laser device fabricating method
Keisuke Miyazaki,Kazuhiko Wada,Taiji Morimoto +2 more
- 14 Apr 2003
TL;DR: In this paper, the deterioration of the characteristic of contact with a p-type electrode as a consequence of a reduction in the carrier density of the p-Type contact layer 28 can be prevented.
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