Patent
Self-scanning type light-emitting element array
Ono Seiji,誠治 大野 +1 more
- 27 Mar 2000
39
TL;DR: In this article, an island of shift section/light-emitting section and a gate load resistance are not separated but integrated, and a contact resistance between the electrode of the gate load and a p-type gate layer is not generated.
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Abstract: PROBLEM TO BE SOLVED: To provide a self-scanning type light-emitting array capable of realizing normal transfer while improving a transfer rate. SOLUTION: An island of shift section/light-emitting section and an island of a gate load resistance are not separated but integrated. Since an electrode for the gate load resistance is not provided, a contact resistance between the electrode of the gate load resistance and a p-type gate layer is not generated. As a result, the gate resistance becomes small and the transfer rate increases. COPYRIGHT: (C)2007,JPO&INPIT
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Citations
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References
Patent
Surface light-emitting element and self-scanning type light-emitting device
Yukihisa Kusuda,Seiij Ohno,Shunsuke Ohtsuka +2 more
- 24 Sep 1996
TL;DR: In this article, a surface light-emitting element having improved external light emission efficiency and a self-scanning light emitting device using this surface light emitting element are provided, where an insulating layer is provided on the electrode portion above which there is a light-shielding layer at a portion making contact with the semiconductor layer thereunder.
71
Patent
Surface light emitting thyristor and self-scanning light emitting device
Yukihisa Kusuda,Ono Seiji,Otsuka Shunsuke,俊介 大塚,誠治 大野,幸久 楠田 +5 more
- 10 Apr 1996
TL;DR: In this paper, an N-type semiconductor layer, PNPN layer, and GaAs layer are sequentially deposited on a SiO2 substrate, and an ITO film 28 is formed over the opening and the insulating film 27.
20
Patent
Surface light emitting thyristor and self-scanning type light emitting device
Yukihisa Kusuda,Ono Seiji,Otsuka Shunsuke,俊介 大塚,誠治 大野,幸久 楠田 +5 more
- 12 Apr 1996
TL;DR: In this article, a surface light emitting thyristor with a light emitting quantity, that it with good external light emitting efficiency by forming neck parts between a first electrode region and a second electrode region of the first, second and third semiconductor layers.
10
Patent
Self-scan type light emitting device
Ono Seiji,Kusuda Yukihisa,Otsuka Shunsuke +2 more
- 08 Apr 1997
TL;DR: In this article, a gate electrode 4a1 of a switch element is connected through a load resistor RL to a power voltage VGK line, and an anode electrode 2b is formed on a p-type semiconductor layer 21a of the emitting element and connected to a write signal Sin line.
4
Patent
Recording chip, recording head, and image recording device
Narita Izumi,Muto Kenji +1 more
- 02 Feb 1999
TL;DR: In this article, a hot-sensitive body is rotated in the arrow direction and after the surface thereof is charged uniformly by a charging roller, it is exposed in accordance with images to be recorded by a print head composed of the luminous part 103, rod lens arrays 102, and the like, resulting in a formation of static latent images on the surface.
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