Phase-change memory

TL;DR: A critical overview of the proposed nano-ionic mechanisms for memristive switching is given in this paper, focusing particularly on providing fundamental insights into the strategies for regulating the adaptive memrisive characteristics of devices that resemble the behaviors of biological synapses, which is an element of neural networks.

TL;DR: The results suggest that anharmonic conductance at metal-diamond interfaces is controlled by partial transmission processes, where a diamond phonon that inelastically scatters at the interface absorbs or emits a metal phonon.

Abstract: Metasurfaces have attracted increasing attention and provide promising solutions for cost‐effective and highly efficient optics due to their unprecedented capabilities in light manipulation. In recent years, phase‐change materials (PCMs), especially phase‐change chalcogenides, are integrated into metasurfaces to explore innovative configurations exhibiting remarkable tunability and reconfigurability due to the dramatic optical contrasts available in PCMs along with their high chemical and long‐term stability and high switching speeds. In this review, the current achievements and ongoing developments in dynamic metasurfaces based on phase‐change chalcogenides, an emerging field in nanophotonics and optoelectronics, are outlined. Starting with the basic material properties of phase‐change chalcogenides, the structural transformations and dielectric functions of two main chalcogenides are described. This is followed by an overview of the main progress in typical dynamic metasurfaces based on phase‐change chalcogenides enabling global and local amplitude/phase modulation. The review ends with a short conclusion and outlook on possible future developments.

TL;DR: In conclusion, silicon oxide is an excellent choice for resistance-switching technologies, offering a number of compelling advantages over competing material systems.

TL;DR: There is, I think, something ethereal about i —the square root of minus one, which seems an odd beast at that time—an intruder hovering on the edge of reality.

TL;DR: In this paper, a rapid and reversible transition between a highly resistive and a conductive state effected by an electric field was described in various types of disordered materials, particularly amorphous semiconductors covering a wide range of compositions.