Patent
Optical modulator utilizing wafer bonding technology
Haisheng Rong,Ansheng Liu +1 more
- 02 Aug 2010
36
TL;DR: In this article, a silicon on insulator (SOI) wafer is used to produce a first part of a silicon waveguide structure on a first surface of the SOI wafer, and then a second part of the waveguide is etched in the layer of crystalline silicon.
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Abstract: Optical modulator utilizing wafer bonding technology. An embodiment of a method includes etching a silicon on insulator (SOI) wafer to produce a first part of a silicon waveguide structure on a first surface of the SOI wafer, and preparing a second wafer, the second wafer including a layer of crystalline silicon, the second wafer including a first surface of crystalline silicon. The method further includes bonding the first surface of the second wafer with a thin oxide to the first surface of the SOI wafer using a wafer bonding technique, wherein a second part of the silicon waveguide structure is etched in the layer of crystalline silicon.
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Citations
Patent
Photonic integration platform
Mark Webster,Ravi S. Tummidi +1 more
- 18 Jun 2014
TL;DR: In this article, a waveguide adapter is embedded into the insulator layer of a SOI device to enable the waveguide to be formed before the surface layer components are added onto the SOI devices.
37
Patent
Hybrid optical modulator
John Spann,Derek Van Orden,Amit Mizrahi,Timothy Creazzo,Elton Marchena,Robert J. Stone,Stephen B. Krasulick +6 more
- 12 Apr 2013
TL;DR: In this paper, a waveguide coupler is coupled to the first phase adjustment section and the second phase adjustment sections, a second waveguide region comprising silicon and optically coupled to a waveguided coupler, and an output port is coupled with a second III-V diode.
27
Patent
Hybrid MOS optical modulator
Di Liang
- 30 Apr 2012
TL;DR: A hybrid MOS optical modulator as discussed by the authors consists of an optical waveguide, a cathode, and an anode comprising a second material dissimilar from the first material and formed in the waveguide.
23
Patent
A process for manufacturing a photonic circuit with active and passive structures
Tom Collins
- 13 Jul 2012
TL;DR: In this article, a process for manufacturing a photonic circuit comprises: manufacturing on a first wafer a first layer stack comprising an underclad oxide layer and a high refractive index waveguide layer.
17
Patent
Vertical optical coupler for planar photonic circuits
TL;DR: In this article, an apparatus, system, and method for providing a vertical optical coupler (VQC) for planar photonic circuits such as photonics circuits fabricated on silicon-on-insulator (SOI) wafers is described.
16
References
A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor
Ansheng Liu,Richard Jones,Ling Liao,Dean A. Samara-Rubio,Doron Rubin,Oded Cohen,Remus Nicolaescu,Mario J. Paniccia +7 more
TL;DR: An approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation is described and an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz is demonstrated.
1.8K
12.5 Gbit/s carrier-injection-based silicon micro-ring silicon modulators
TL;DR: A scheme for achieving high-speed operation for carrier-injection based silicon electro-optical modulator, which is optimized for small size and high modulation depth is shown.
High-speed optical modulation based on carrier depletion in a silicon waveguide
Ansheng Liu,Ling Liao,Doron Rubin,Hat Nguyen,Berkehan Ciftcioglu,Yoel Chetrit,Nahum Izhaky,Mario J. Paniccia +7 more
TL;DR: A high-speed and highly scalable silicon optical modulator based on the free carrier plasma dispersion effect is presented that will enable silicon modulators to be one of the key building blocks for integrated silicon photonic chips for next generation communication networks as well as future high performance computing applications.
755
High speed silicon Mach-Zehnder modulator
Ling Liao,Dean A. Samara-Rubio,Mike Morse,Ansheng Liu,Dexter Hodge,Doron Rubin,Ulrich D. Keil,Thorkild Franck +7 more
TL;DR: A silicon modulator with an intrinsic bandwidth of 10 GHz and data transmission from 6 Gbps to 10 Gbps is demonstrated.
Patent
High-speed silicon-based electro-optic modulator
Kalpendu Shastri,Prakash Gothoskar,Margaret Ghiron,Vipulkumar Patel,Robert Keith Montgomery,Soham Pathak,Katherine A. Yanushefski +6 more
- 10 May 2004
TL;DR: In this paper, a silicon-based electro-optic modulator is proposed, which is based on forming a gate region of a first conductivity to partially overly a body region of the second conductivity type, with a relatively thin dielectric layer interposed between the contiguous portions of the gate and body regions.
170
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