Method for making semiconductor packaged devices and assemblies

TL;DR: A semiconductor package fabricated from metals of atomic number less than 32 for use in any environment including a high radiation environment, and a process for fabricating a semiconducting package with reproducible electrical characteristics using mass production techniques is described in this paper, where a base member, such as a metal header having metal terminal conductors and an area for attaching a semiconductor body, is first coated at least in part with a soft metal such as copper, and then coated with a hard metal such a nickel, or if a molybdenum-manganese metall

Abstract: A semiconductor package fabricated from metals of atomic number less than 32 for use in any environment including a high radiation environment, and a process for fabricating a semiconductor package with reproducible electrical characteristics using mass production techniques. In the method, a base member, such as a metal header having metal terminal conductors and an area for attaching a semiconductor body, is first coated at least in part with a Soft Metal, such as copper, and then coated with a Hard Metal, such as nickel, or if a molybdenum-manganese metallized ceramic header is used, at least the metallization is coated with a metal strike, such as nickel, prior to coating the header with the Soft and Hard Metals, and then the base member is heat treated to form a header having an improved semiconductor body attachment area and electrical conductors.