Journal Article10.1109/JPROC.2012.2190369
Metal–Oxide RRAM
Hon-Sum Philip Wong,Heng-Yuan Lee,Shimeng Yu,Yu-Sheng Chen,Yi Wu,Pang-Shiu Chen,Byoungil Lee,Frederick T. Chen,Ming-Jinn Tsai +8 more
- 02 May 2012
- Vol. 100, Iss: 6, pp 1951-1970
2.7K
TL;DR: The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide resistive switching random access memory (RRAM) are discussed, with a focus on the use of RRAM for nonvolatile memory application.
read more
Abstract: In this paper, recent progress of binary metal-oxide resistive switching random access memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide RRAM are discussed, with a focus on the use of RRAM for nonvolatile memory application. A review of recent development of large-scale RRAM arrays is given. Issues such as uniformity, endurance, retention, multibit operation, and scaling trends are discussed.
read more
Chat with Paper
AI Agents for this Paper
Find similar papers on Google Scholar, PubMed and Arxiv
Write a critical review of this paper
Analyze citations of this paper to find unaddressed research gaps
Citations
Memristive devices for computing
TL;DR: The performance requirements for computing with memristive devices are examined and how the outstanding challenges could be met are examined.
3.6K
Training and operation of an integrated neuromorphic network based on metal-oxide memristors
Mirko Prezioso,Farnood Merrikh-Bayat,Brian D. Hoskins,Gina C. Adam,Konstantin K. Likharev,Dmitri B. Strukov +5 more
TL;DR: The experimental implementation of transistor-free metal-oxide memristor crossbars, with device variability sufficiently low to allow operation of integrated neural networks, in a simple network: a single-layer perceptron (an algorithm for linear classification).
The future of electronics based on memristive systems
Mohammed A. Zidan,John Paul Strachan,Wei Lu +2 more
- 01 Jan 2018
TL;DR: The state of the art in memristor-based electronics is evaluated and the future development of such devices in on-chip memory, biologically inspired computing and general-purpose in-memory computing is explored.
1.7K
PRIME: a novel processing-in-memory architecture for neural network computation in ReRAM-based main memory
Ping Chi,Shuangchen Li,Cong Xu,Tao Zhang,Jishen Zhao,Yongpan Liu,Yu Wang,Yuan Xie +7 more
- 18 Jun 2016
TL;DR: This work proposes a novel PIM architecture, called PRIME, to accelerate NN applications in ReRAM based main memory, and distinguishes itself from prior work on NN acceleration, with significant performance improvement and energy saving.
1.5K
References
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
High-κ gate dielectrics: Current status and materials properties considerations
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Abstract: This review article introduces resistive switching processes that are being considered for nanoelectronic nonvolatile memories. The three main classes are based on an electrochemical metallization mechanism, a valence change mechanism, and a thermochemical mechanism, respectively. The current understanding of the microscopic mechanisms is discussed and the scaling potential is outlined..
5K