Patent
Etching liquid, etching method using the same, and substrate to be etched
Takashi Ihara,Tsugikatsu Osakabe,孝 井原,次功 刑部 +3 more
- 26 Mar 2008
19
TL;DR: In this paper, an etching liquid with a pH of ≤ 7 as a specified oxidizer selected from ferric chloride or the like or as a mixture of acid selected from hydrochloric acid and the above oxidizer obtained by being filtered using a filter with an opening of ≤ 1 μm.
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Abstract: PROBLEM TO BE SOLVED: To provide an etching liquid which ensures a high etch factor in etching metals, alloys and metal oxides. SOLUTION: Disclosed is an etching liquid with a pH of ≤7 as a specified oxidizer selected from ferric chloride or the like or as a mixture of acid selected from hydrochloric acid or the like and the above oxidizer obtained by being filtered using a filter with an opening of ≤1 μm. A high etch factor is achieved by using an etching method using the etching liquid. The etching liquid is suitably used for etching copper, ITO (indium tin oxide) or the like. COPYRIGHT: (C)2010,JPO&INPIT
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Citations
Patent
Etching liquid composition and etching method
Takao Yamaguchi,Ishikawa Norio +1 more
- 17 Apr 2013
TL;DR: In this paper, a display device of a flat panel display and an etching liquid composition for the transparent conductive film used for the electrodes of a solar cell or a touch control panel are presented.
12
Patent
Etching solution, replenishment solution, and method for forming wiring
Fukui Yu,Saito Satoshi,Ishida Terukazu +2 more
- 09 Dec 2015
TL;DR: In this article, a copper etching solution that can suppress side etching of a copper wiring pattern, to a replenishment solution thereof, and to a method for forming wiring is presented.
8
Patent
Etching method and devices produced using the etching method
Muthu Sebastian,Fong Liang Tan +1 more
- 13 Jul 2012
TL;DR: A double ITO structure, containing sequential layers of indium tin oxide (ITO), silicon dioxide (SiO 2 ) and ITO, is selectively protected by a patterned photo-resist mask as mentioned in this paper.
8
Patent
Interconnection formation method and etchant
Tomoshi Saito,知志 斉藤,Deguchi Yukari,友香里 出口,Mina Sato,未菜 佐藤,Ishida Terukazu,輝和 石田 +7 more
- 26 Dec 2011
TL;DR: In this article, an interconnection formation method for forming an interconnect including a metal oxide layer and a copper layer includes an etching step for etching the oxide layer by bringing etchant into contact with a part where a conductor pattern is not laminated, and the etchant is an acidic aqueous solution containing a thiocarbonyl compound and halide ions.
7
Patent
Etchant for transparent conductive thin film laminate
Usui Shigetaka,Katori Mitsuomi,Sato Takaaki +2 more
- 09 May 2013
TL;DR: In this article, the authors proposed an etchant consisting of a sulfuric acid, a hydrogen peroxide and a nitrogen-containing compound, which is used for etching a transparent conductive thin film or transparent conductively thin film laminate.
7
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