Epitaxial semiconductor layer as a diffusion mask

Patent

Epitaxial semiconductor layer as a diffusion mask

- 28 Apr 1965

6

About: The article was published on 28 Apr 1965. The article focuses on the topics: Diffusion (business) & Layer (electronics).

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Citations

Patent

Methods for making transistor structures

George Elwood Smith

- 03 Nov 1976

TL;DR: In this paper, an extremely short channel FET is made by forming a metal layer over a wafer, depositing silicon dioxide over part of the metal layer, oxidizing the exposed metal, controllably etching a portion of the silicon dioxide to expose a small strip of the nonoxidized metal layer.

...read moreread less

47

Patent

Selective diffusion masking process

Frederick G Ernick, +1 more

- 18 Mar 1968

27

Patent

Method of producing gallium arsenide devices

George Richard Antell

- 09 Jan 1968

TL;DR: In this paper, a method of producing an " intrinsic " [semi-insulating] region in an N-type GaAs body comprises diffusing-in oxygen through an oxygen permeable surface layer.

...read moreread less

16

Patent

Method of fabricating GaAs devices utilizing a semi-insulating layer of AlGaAs in combination with an overlying masking layer

H. C. Casey, +2 more

- 21 Apr 1980

TL;DR: In this article, a semi-insulating, oxygen, iron or chromium doped monocrystalline layer of AlGaAs is grown on a GaAs body and is then masked.

...read moreread less

10

Patent

Fabrication of junction laser devices having mode-suppressing regions

Hans A Strack, +1 more

- 25 Feb 1971

TL;DR: In this article, a p-n junction laser device having a central lasing region paralleled by p-type regions which serve to suppress transverse lasing modes is prepared from an n-type gallium arsenide crystal by the selective diffusion of zinc, employing a three-layer masking system.

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3

References

Patent

Method of forming a semiconductor

Gareth A Tripp

- 15 Jul 1963

33

Patent

Method of ultra-fine semiconductor manufacture

Frances B Hugle

- 21 Jan 1963

29

Patent

Method of forming an extremely small junction

Richard F Rutz

- 18 Jun 1962

TL;DR: In this paper, a semi-conductor device consisting of a high resistivity layer or body containing an aperture with heavily doped layers of opposite conductivity type material overlying opposite ends of the aperture, at least one of the layers extending into the aperture to form a PN tunnel junction with the other.

...read moreread less

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Patent