Patent
Dry-etch selectivity
He Ren,Jang-Gyoo Yang,Jonghoon Baek,Anchuan Wang,Soonam Park,Saurabh Garg,Xinglong Chen,Nitin K. Ingle +7 more
- 22 Jan 2015
132
TL;DR: In this paper, a method of etching exposed patterned heterogeneous structures is described and includes a remote plasma etch formed from a reactive precursor, which is pulsed rather than left on continuously.
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Abstract: A method of etching exposed patterned heterogeneous structures is described and includes a remote plasma etch formed from a reactive precursor. The plasma power is pulsed rather than left on continuously. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents selectively remove one material faster than another. The etch selectivity results from the pulsing of the plasma power to the remote plasma region, which has been found to suppress the number of ionically-charged species that reach the substrate. The etch selectivity may also result from the presence of an ion suppression element positioned between a portion of the remote plasma and the substrate processing region.
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Citations
Patent
Semiconductor processing systems having multiple plasma configurations
Dmitry Lubomirsky,Xinglong Chen,Shankar Venkataraman +2 more
- 08 Mar 2013
TL;DR: In this paper, the authors describe a system that includes a first plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access.
235
Patent
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Jingchun Zhang,Anchuan Wang,Nitin K. Ingle +2 more
- 09 Mar 2012
TL;DR: In this paper, a method of selectively etching a metal-containing film from a substrate comprising a metal containing layer and a silicon oxide layer is proposed, which involves flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber, and applying energy to the fluorinecontaining gas to generate a plasma in the plasma generation area.
194
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Jingchun Zhang,Anchuan Wang,Nitin K. Ingle +2 more
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TL;DR: In this paper, a method of selectively etching silicon nitride from a substrate comprising a silicon oxide layer and a silicon dioxide layer is proposed. But the method requires the substrate to be exposed to the reactive gas in the gas reaction region of the substrate processing chamber.
170
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Processing systems and methods for halide scavenging
Anchuan Wang,Xinglong Chen,Zihui Li,Hiroshi Hamana,Zhijun Chen,Ching-Mei Hsu,Jiayin Huang,Nitin K. Ingle,Dmitry Lubomirsky,Shankar Venkataraman,Randhir Thakur +10 more
- 07 Apr 2014
TL;DR: In this article, a system, chambers, and processes are provided for controlling process defects caused by moisture contamination in a vacuum or controlled environment, and the chambers may include configurations to provide additional processing capabilities in combination chamber designs.
167
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Selective etch of silicon by way of metastable hydrogen termination
Anchuan Wang,Jingchun Zhang,Nitin K. Ingle,Young S. Lee +3 more
- 04 Apr 2012
TL;DR: In this paper, the authors described a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor, where the plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials.
161
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