Carbon-based resistive memory
Franz Kreupl,Rainer Bruchhaus,Petra Majewski,Jan Boris Philipp,Ralf Symanczyk,Thomas Dr. Happ,Christian Arndt,Mirko Vogt,Roy Zimmermann,Axel Buerke,Andrew Graham,Michael Kund +11 more
- 01 Dec 2008
- pp 1-4
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TL;DR: In this article, the authors propose carbon as a resistive memory material for nonvolatile memories and compare three allotropes of carbon, namely carbon nanotubes, graphene-like conductive carbon and insulating carbon.
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Abstract: We propose carbon as new resistive memory material for non-volatile memories and compare three allotropes of carbon, namely carbon nanotubes, graphene-like conductive carbon and insulating carbon for their possible application as resistance-change material in high density non-volatile memories. Repetitive high-speed switching and the potential for multi-level programming have been successfully demonstrated.
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A review of emerging non-volatile memory (NVM) technologies and applications
TL;DR: High-performance and low-cost emerging NVMs may simplify memory hierarchy, introduce non-volatility in logic gates and circuits, reduce system power, and enable novel architectures, and Storage-class memory (SCM) based on high-density NVMs could fill the performance and density gap between memory and storage.
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Nonvolatile resistive switching in graphene oxide thin films
Congli He,Fei Zhuge,Xufeng Zhou,M. Li,G. C. Zhou,Y. W. Liu,J. Z. Wang,B. Chen,W. J. Su,Z. P. Liu,Yihong Wu,Peng Cui,Run-Wei Li +12 more
TL;DR: In this paper, reliable and reproducible resistive switching behaviors were observed in graphene oxide (GO) thin films prepared by the vacuum filtration method, which indicated that GO is potentially useful for future nonvolatile memory applications.
Graphene memristive synapses for high precision neuromorphic computing.
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Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM
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Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
George Samachisa
- 02 Apr 2010
TL;DR: In this article, a three-dimensional array is adapted for memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them, and memory elements are formed across a plurality of planes positioned different distances above a semiconductor substrate.
139
References
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Brett R. Goldsmith,John G. Coroneus,Vaikunth R. Khalap,Alexander Kane,Gregory A. Weiss,Philip G. Collins +5 more
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Kazuyuki Takai,Meigo Oga,Hirohiko Sato,Toshiaki Enoki,Yoshimasa Ohki,Akira Taomoto,Kazutomo Suenaga,Sumio Iijima +7 more
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Non-volatile switching in graphene field effect devices
TL;DR: In this paper, a new approach was proposed to engineer a band gap in graphene field effect devices (FEDs) by controlled structural modification of the graphene channel itself, where the conductance in the FEDs was switched between a conductive "on-state" to an insulating "off-state".
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