Journal Article10.1016/J.APSUSC.2007.06.071
Atomic-level simulations of nanoindentation-induced phase transformation in mono-crystalline silicon
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TL;DR: In this article, the phase transformation induced by deformation in micro-scale is closely related to the carrier mobility of the material, it has become a key issue to be investigated for the chips especially with smaller feature size.
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About: This article is published in Applied Surface Science. The article was published on 30 Dec 2007. The article focuses on the topics: Nanoindentation & Indentation.
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Citations
Subsurface damage mechanism of high speed grinding process in single crystal silicon revealed by atomistic simulations
TL;DR: In this article, the effect of surface damage and surface integrity on a single crystal silicon using a diamond tool was investigated by analyzing the chip, dislocation movement, and phase transformation, and established an analytical model to calculate several important stress fields including hydrostatic stress and von Mises stress for studying subsurface damage mechanism, and obtain the dislocation density on the ground surface.
143
Amorphization and nanocrystallization of silicon under shock compression
Shiteng Zhao,Eric N. Hahn,Bimal K. Kad,Bruce Remington,Christopher Wehrenberg,Eduardo M. Bringa,Eduardo M. Bringa,Marc A. Meyers +7 more
TL;DR: In this article, two distinct amorphous regions were identified: (a) a bulk amomorphous layer close to the surface and (b) amorphrous bands initially aligned with {111} slip planes.
134
Molecular dynamic simulations of nanoindentation in aluminum thin film on silicon substrate
TL;DR: In this article, a three-dimensional molecular dynamic (MD) simulation of the nanoindentation of aluminum thin film on silicon substrate is investigated by taking the Lennard-Jones potential to describe the interaction at the film-substrate interface.
121
Molecular dynamics simulation of the interfacial thermal resistance between phosphorene and silicon substrate
TL;DR: In this paper, the authors show that the thermal conductance between phosphorene and crystalline silicon substrate is very low and independent on the thickness of the silicon substrate when h is larger than 3.12nm.
93
Molecular dynamics investigations of mechanical behaviours in monocrystalline silicon due to nanoindentation at cryogenic temperatures and room temperature
TL;DR: By searching for the presence of the unique non-bonded fifth neighbour atom, the metastable phases (Si-III and Si-XII) with fourfold coordination could be distinguished from Si-I phase during the loading stage of nanoindentation process, and simulation results indicate that the anisotropy of monocrystalline silicon is strengthened at low temperatures.
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