TL;DR: In this paper, the static coefficient of friction, μ, of PTFE films is compared to that of bulk polytope when the film is thicker than the asperities on the substrate (≈1 μm).

TL;DR: The ion bombardment probably causes the formation of an intermediate structure at the glass-aluminium interface which increases the bonding as discussed by the authors, which is the case in the case of aluminum films.

TL;DR: In this article, the saturation density of nuclei on a surface is derived from an approximate analysis of the rate equations describing the formation and decay of all nuclei of all sizes.

TL;DR: The stacking-fault energy of 304 stainless steel and Inconel 600 alloy was determined by electron microscopy techniques to be 21 and 28 ergs/cm 2, respectively Electron microscopy studies also revealed anomalous, wide stacking faults in copper and nickel having a predominantly extrinsic nature as discussed by the authors.

TL;DR: In this article, the internal stress in the initial stages of growth of evaporated silver and gold films on to glass and mica substrates has been measured using a bending beam method, and the thermal stress contribution to the total stress has been calculated.

TL;DR: In this paper, the results of adsorption and diffusion of oxygen were discussed in terms of the Hall coefficient and resistivity of n-type PbTe samples, which imply that large band bending occurs at the surface or that the room temperature diffusion coefficient of oxygen is high (>10 -10 cm 2 sec -1 ).

TL;DR: In this paper, electron microscopy was used to study the early formation of voids and surface growths in silver and aluminum thin film stripes and found that void damage was comparatively stable, and failure ultimately occurred at the cathode end of the stripes.

TL;DR: In this article, a new model is presented in order to explain a variety of previous observations on the oxide-coated thermionic cathode, as well as the behaviour of a number of other oxide layer structures.

TL;DR: In this paper, the process of evaporation and condensation of magnesium fluoride, cryolite and zinc sulfide was investigated by application of a mass spectrometer and it was found that MgF 2 evaporates practically without decomposition but in the case of ZnS dissociation and fractionation occur.

TL;DR: In this article, the optical constants of indium, from 0.5 eV to 6.2 eV, are deduced from the transmittance and reflectance of thin semitransparent films, a method which allows the neglect of the influence of the oxide layer.

TL;DR: In this article, high-resolution electron diffraction patterns have been measured with a micro-densitometer, giving direct and unambiguous evidence of pseudomorphism, and a tentative explanation for these, in terms of possible interference from oxide layers, is suggested.

TL;DR: A qualitative study of the diffusion and reactivity of a number of metals in thin films of amorphous arsenic triselenide was made in this paper, where the results were of interest in connection with the electrical conductivity of doped chalcogenide glasses.

TL;DR: In this paper, the temperature coefficient of resistance (TCR) of thin cermet films of gold and glass has been shown to lie within the commercially acceptable limits of ±250 ppm °C −1 over a wide range of sheet resistances.

TL;DR: In this paper, specific resistance, adhesion and stress of CdSe films on glass and mica substrates at room temperature are discussed in relation to the deposition rate of the films in the range from 0.2 to 700 A/s.

TL;DR: The argon concentration in the SiO2 films is mainly dependent on temperature as mentioned in this paper, and there is little dependence of argon content on layer thickness, argon pressure and power density.

TL;DR: In this article, a new method of electrical decoration of single crystal surfaces based on selective crystallization of silver chloride by thermal evaporation is described, and it is shown that in many cases just the electrical, and not the geometrical, relief of crystal substrate surfaces accounts for the selectivity of nucleation and growth.

TL;DR: In this article, the effect of point material and its curvature was determined by finding the errors in adhesive forces measured by the point engraving method, which was used for measuring the adhesion of thin films.

TL;DR: In this paper, a successful method for vacuum evaporation of bismuth trioxide has been developed that produces transparent dielectric films with thicknesses varying from 1000 to 3000 A.

TL;DR: In this article, the properties of thin films of Yt, Sc, Fe, Ni and Ni-Fe alloys produced by deposition onto liquid helium cooled substrates were investigated.

TL;DR: In this article, the annealing characteristics of vacuum-deposited gold films in the thickness range 200-2000A have been measured at temperatures up to 200 °C and for times up to 10 4 hours.

TL;DR: In this paper, the anode, cathode, and a.c. spectra of galvanoluminescent aluminum were measured in 1% aqueous H3PO4, using 140 V, 110 V, and 128 V respectively.

TL;DR: In this paper, the current-transport mechanism in amorphous germanium films was studied in function of voltage, temperature and electrode separation, and it was concluded that the conduction is bulk-limited.

TL;DR: In this article, thin films of Y2O3 and rare earth oxides have been prepared on glass substrates by the spray technique using acetylacetonates and their transmission has been measured in the region from the ultraviolet to the near infra-red and their indices of refraction have been determined.

TL;DR: In this paper, the authors describe the evolution of PbSe nuclei in a tetrahedral shape with (111) bases and (100) sloping faces, and show that high deposition temperatures give rise to large nuclei with regular shapes, and enhance a better structure containing large domains.

TL;DR: Isolating surface layers were formed on different metals and on silicon by means of bombardment with ionized oxygen and air, respectively, and the electrical properties of these layers were described.

TL;DR: In this paper, it was shown that Hall voltage variations due to gas chemisorption on thin and very thin metallic films are in striking agreement with the Hall voltage variation expected for a decrease in film thickness.