Abstract: The surface of an azoaromatic polymer film is optically altered to produce local highly efficient diffraction gratings. The gratings obtained are stable but can be erased by heating the polymer above its glass transition temperature and no permanent damage of the film is observed. Multiple gratings can be simultaneously written and gratings can be overwritten. Atomic force microscopy was used to investigate the gratings produced on the surfaces. Possible mechanisms responsible for the surface alteration are discussed.

Abstract: We report observation of holographic surface relief gratings with relatively large amplitude on a second order nonlinear optical polymeric material. Surface relief gratings on these polymer films were created upon exposure to polarized Ar+ laser beams at 488 nm without any subsequent processing steps. The surface structure of the relief gratings was investigated by atomic force microscopy. The depth of the surface relief in a typical case was 120 nm which is approximately 20% of the original film thickness. The diffraction efficiency of gold‐coated gratings was investigated as a function of wavelength and capability of recording orthogonal gratings on the same film was demonstrated.

Abstract: The electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III–V nitride material system have been studied. LEDs with external quantum efficiencies as high as 4% were characterized by transmission electron microscopy and found to contain dislocation densities in excess of 2×1010 cm−2. A comparison to other III–V arsenide and phosphide LEDs shows that minority carries in GaN‐based LEDs are remarkably insensitive to the presence of structural defects. Dislocations do not act as efficient nonradiative recombination sites in nitride materials. It is hypothesized that the benign character of dislocations arises from the ionic nature of bonding in the III–V nitrides.

Abstract: Bright single‐layer white light‐emitting organic electroluminescent devices were developed by using dye‐dispersed poly(N‐vinylcarbazole) (PVK) The active layer consists only of one polymer layer that is simply sandwiched between two electrodes, indium‐tin oxide, and Mg:Ag In order to achieve bipolarity in the single polymer emitter layer, PVK was molecularly dispersed with electron‐transporting additives such as 2‐(4‐biphenyl)‐5‐(4‐tert‐butylphenyl)‐1,3,4‐oxadiazole In addition, several fluorescent dyes, having different emission colors, were dispersed as emitting centers By adjusting the concentration of the fluorescent dyes, white light with a maximum luminescence of 4100 cd/m2 was obtained, which is the brightest white light ever observed for organic electroluminescent devices

Abstract: High‐power blue and violet light‐emitting diodes(LEDs) based on III–V nitrides were grown by metalorganic chemical vapor deposition on sapphire substrates. As an active layer, the InGaN single‐quantum‐well‐structure was used. The violet LEDs produced 5.6 mW at 20 mA, with a sharp peak of light output at 405 nm, and exhibited an external quantum efficiency of 9.2%. The blue LEDs produced 4.8 mW at 20 mA and sharply peaked at 450 nm, corresponding to an external quantum efficiency of 8.7%. These values of the output power and the quantum efficiencies are the highest ever reported for violet and blue LEDs.

Abstract: A new nonlinear optical crystal CsLiB6O10 (CLBO), is described that can be grown from either stoichiometric melt or from solution. A large, high quality single crystal with dimensions of 14×11×11 cm3 was obtained by the top‐seeded Kyropoulos method. Fourth harmonic and fifth harmonic generations of the 1.064 μm Nd:YAG laser radiation with type‐I phase matching were realized in the CLBO crystal. Output pulse energies obtained were 110 mJ at 266 nm and 35 mJ at 213 nm.

Abstract: Thin films of novel superhard composite materials consisting of TiN nanocrystals in an amorphous Si3N4 matrix have been prepared by means of plasma chemical vapor deposition. The films show a high Vickers hardness of 5000 kg/mm2 and elastic modulus of ≳500 GPa, and they are resistant against oxidation in air up to ≥800 °C. The theoretical background of these unusual properties are briefly discussed and practical rules suggested according to which similar properties should be expected for composites of other ternary systems.

Abstract: Oscillating silicon nitride microcantilevers coated with a thin gold film have been used to detect mercury vapor in air. Cantilever resonance frequency changes due to surface mass loading as a result of adsorption of mercury vapor. Furthermore, cantilever bending is also altered due to changes in surface stress induced by mercury adsorption on the gold overlayer. Both of these phenomena can be used to quantitatively detect adsorbed vapors with picogram mass resolution.

Abstract: We report that organic electroluminescence devices with a distyrylarylene (DSA) emitting layer including a new dopant realized highly efficient and bright emission in blue region. This dopant was amino‐substituted DSA. The luminous efficiency was obtained to be 1.5 lm/W. The external quantum efficiency was estimated to be 2.4%, which is one of the highest efficiencies ever reported in blue emitting organic EL devices.

Abstract: We discuss an improved mid‐wave infrared diode laser structure based on InAs‐Ga1−xInxSb‐ InAs‐Ga1−xAlxSb Type‐II multiple quantum wells. The proposed design combines strong optical coupling, 2D dispersion for both electrons and holes, suppression of the Auger recombination rate, and excellent electrical and optical confinement.

Abstract: Ferroelectric SrBi2Ta2O9 thin films were synthesized on Pt/Ti/SiO2/Si substrates using a solution deposition process, and structural and electrical properties were investigated. The spin‐on films crystallized during firing above 700 °C. The films showed high diffraction peaks of (105) and (200), while little peaks from (00l) planes were observed. Good ferroelectric properties were obtained for a 280 nm thick film; Pr and Ec were 10.0 μC/cm2 and 38 kV/cm, respectively. Fatigue endurance was excellent; the hysteresis loop does not change up to 109 switching cycles. These properties are very attractive for nonvolatile memory application.

Abstract: We have combined a novel low temperature positioning mechanism with a single‐chip miniature superconducting quantum interference device (SQUID) magnetometer to form an extremely sensitive new magnetic microscope, with a demonstrated spatial resolution of ∼10 μm. The design and operation of this scanning SQUID microscope will be described. The absolute calibration of this instrument with an ideal point source, a single vortex trapped in a superconducting film, will be presented, and a representative application will be discussed.

Abstract: The preferred orientation of polycrystalline TiN films grown by ultrahigh‐vacuum reactive‐magnetron sputter deposition on amorphous SiO2 at 350 °C in pure N2 discharges was controllably varied from (111) to completely (002) by varying the incident ion/metal flux ratio Ji/JTi from 1 to ≥5 with the N+2 ion energy Ei maintained constant at ≂20 eV (≂10 eV per incident accelerated N). All samples were slightly over‐stoichiometric with N/Ti=1.02±0.03. Films deposited with Ji/JTi=1 initially exhibit a mixed texture with competitive columnar growth which slowly evolves into a nearly complete (111) texture at film thicknesses greater than 1 μm. However, films grown with Ji/JTi≥5 exhibit an essentially complete (002) preferred orientation from the earliest observable stages. The normalized XRD (002) intensity ratio in thick layers increased from ≂0 to 1 as Ji/JTi was varied from 1 to ≥5. Both (111) and (001) interplanar spacings remained constant as a function of film thickness yielding a lattice constant of 0.4240...

Abstract: Recent optical heterodyne measurements with distributed‐Bragg‐reflector diode‐laser pumps demonstrate that low‐temperature‐grown (LTG) GaAs photomixers will be useful in a compact all‐solid‐state terahertz source. Electrical 3 dB bandwidths as large as 650 GHz are measured in mixers with low electrode capacitance. These bandwidths appear to be independent of pump‐laser wavelength over the range 780–850 nm. Shorter wavelength pumping results in a significant reduction of the bandwidth. The best LTG‐GaAs photomixers are used to generate coherent continuous‐wave output radiation at frequencies up to 5 THz.

Abstract: We recently reported a new lasing dye, trans‐4‐[p‐(N‐ethyl‐N‐hydroxylethylamino)styryl]‐N‐methylpyridinium tetraphenylborate (ASPT), which has also been shown to possess a strong two‐photon absorption (TPA) and subsequent frequency upconversion fluorescence behavior when excited with near infrared laser radiation. Based on the TPA mechanism, a highly efficient optical limiting performance has been demonstrated in a 2 cm long ASPT‐doped epoxy rod pumped with 1.06 μm Q‐switched laser pulses at 50–250 MW/cm2 intensity levels. The measured nonlinear absorption coefficient reached 6 cm/GW for the tested sample of dopant concentration d0=4×10−3 M/L. The molecular TPA cross section of ASPT in the epoxy matrix is estimated as σ2=2.5×10−18 cm4/GW or σ2′=4.7×10−46 cm4/photon/s, respectively. Two‐photon pumped cavity lasing is also observed in an ASPT‐doped polymer rod.

Abstract: We present results of a theoretical investigation into a nonlinear thin‐film multilayer device that exhibits passive anisotropic optical transmission—the analogue of the electronic diode. This optical diode is a nonlinear, asymmetric, distributed Bragg reflector. Material parameters for a nonlinear polymer (polydiacetylene 9‐BCMU) and rutile are used in alternating layers to model a realistic device. The diode exhibits more than five times as much transmittance in one direction as in the opposite direction. It has a thickness of only 2 μm and is polarization insensitive.

Abstract: We observed the surface potential of silicon pn junctions using a Kelvin probe force microscope whose sensitivity was about five times better than that of a conventional one. It was achieved by three major improvements: electrostatic force detection using the second cantilever resonance, cantilever Q‐value enhancement by operating in a vacuum, and direct cantilever resonance frequency detection using the frequency modulation technique. It was demonstrated that the surface potential of the pn junctions made by thermal diffusion varies gradually compared to those made by ion implantation, possibly reflecting their gradual dopant concentration profile.

Abstract: Monocrystalline GaN(0001) thin films, void of oriented domain structures and associated low‐angle grain boundaries, have been grown via organometallic vapor phase epitaxy (OMVPE) on high‐temperature monocrystalline AlN(0001) buffer layers predeposited on vicinal α(6H)–SiC(0001) wafers using TEG, TEA, and ammonia in a cold wall, vertical, pancake‐style reactor. The surface morphology was smooth, and the PL spectrum showed strong near‐band‐edge emission with a full width at half‐maximum (FWHM) value of 4 meV. The dislocation density within the first 0.5 μm was ≊1×109 cm−2; it decreased substantially with increasing film thickness. Controlled n‐type Si doping of GaN has been achieved for net carrier concentrations ranging from ∼1×1017 to 1×1020 cm−3. Double‐crystal XRC measurements indicated a FWHM value of 66 arcsec for the GaN(0004) reflection.

Abstract: The critical dose for graphitization of diamond as a result of ion implantation induced damage (boron and arsenic) and subsequent thermal annealing is determined by combining secondary ion mass spectroscopy measurements, chemical etching of the graphitized layer, and TRIM simulations. Li ions are implanted as a deep marker to accurately determine the position of the graphite/diamond interface. The damage density threshold, beyond which graphitization occurs upon annealing, is found to be 1022 vacancies/cm3. This value is checked against published data and is shown to be of general nature, independent of ion species or implantation energy.

Abstract: N‐ and p‐type regions have been produced in GaN using Si+ and Mg+/P+ implantation, respectively, and subsequent annealing at ∼1100 °C. Carrier activation percentages of 93% for Si and 62% for Mg were obtained for implant doses of 5×1014 cm−2 of each element. Conversely, highly resistive regions (≳5×109 Ω/⧠) can be produced in initially n‐ or p‐ type GaN by N+ implantation and subsequent annealing at ∼750 °C. The activation energy of the deep states controlling the resistivity of these implant‐isolated materials is in the range 0.8–0.9 eV. These process modules are applicable to the fabrication of a variety of different GaN‐based electronic and photonic devices.

Abstract: Free‐standing powder of zinc sulphide quantum particles has been synthesized using a chemical route. X‐ray diffraction analysis shows that the diameter of the particles is ∼21±2 A which is smaller than the Bohr exciton diameter for zinc sulphide. UV absorption shows an excitonic peak centered at ∼300 nm corresponding to an energy gap of 4.1±0.1 eV. These particles show a luminescence band at ∼424 nm. The quantum particles could be doped with copper during synthesis without altering the UV absorption or x‐ray diffraction pattern. However, doping shifted the luminescence to 480 nm, green wavelength in the visible region.

Abstract: We report on the dc characteristics and microwave performance of AlGaN/GaN heterostructure field effect transistors in the temperature range from 25 to 300 °C. At temperatures above 200 °C, we observe the temperature activated shunt conductance which is independent of the gate voltage (the activation energy is 0.505 eV). The cutoff frequency and the maximum frequency of oscillations vary from 22 and 70 GHz at 25 °C to 5 and 4 GHz at 300 °C, respectively. The gate leakage current in the range of gate biases from −4 to +1 V is small and nearly proportional to the gate voltage even at 300 °C. At temperatures above 200 °C, the gate leakage current is temperature activated (the activation energy is 0.88 eV). These results show that deep traps strongly affect the AlGaN/GaN characteristics at elevated temperatures.

Abstract: Photoluminescence investigations on undoped n‐type GaN layers grown on 6H‐SiC and sapphire reveal the presence of residual acceptors with a binding energy of 230 meV. Their presence in high temperature vapor phase epitaxy grown layers is strongly correlated with the graphite susceptor containing the Ga. Mg as a contamination can be ruled out. In metal organic vapor phase epitaxially grown layers, the metal organic are probably the source of the carbon contamination. It is concluded that carbon on nitrogen sites introduces the most shallow acceptor in GaN. The experimental observations are supported by an estimate of the acceptor binding energy using effective‐mass‐theory.

Abstract: We present a photoluminescence (PL) study on the growth mode changeover during growth of Ge on Si(100) substrates. Intense PL signals originating from both the flat Ge layer and the three‐dimensional (3D) Ge islands are observed from Si/Ge/Si quantum wells with various Ge coverage. The onset of the 3D island formation is determined to be 3.7 monolayers (ML). It is also found that the 3D islands grow with only 3.0 ML of the flat Ge layer retained. This implies that only the 3.0 ML Ge is thermodynamically stable on Si(100) and hence corresponds to the ‘‘equilibrium’’ critical thickness.

Abstract: The interband transitions in single‐crystal GaN films grown by metalorganic chemical vapor deposition (MOCVD) have been studied as a function of temperature (15≤T≤300 K) by reflectance and photoluminescence measurements. At low temperatures, well‐resolved spectral features corresponding to the GaN band structure were observed. The energies of the excitonic interband ΓV9−ΓC7,ΓV7 (upper band)−ΓC7 and ΓV7(lower band)−ΓC7 transitions are found to be 3.485, 3.493, and 3.518 eV at 15 K, respectively, for the MOCVD GaN. The spectral features are broadened and shift to lower energy as temperature increases. At room temperature (300 K), the ΓV9−ΓC7and ΓV7 (upper band) −ΓC7 transition energies of this wide band‐gap material are determined to be 3.420 and 3.428 eV, respectively. The temperature dependence of these two transitions have been determined using the Varshni empirical relation. Our results yield E0(T)=3.486–8.32×10−4 T2/(835.6+T) eV for the ΓV9−ΓC7 transition and E0(T)=3.494–10.9×10−4 T2/(1194.6+T) eV for ...

Abstract: We report the fabrication and characterization of lithographically defined nanoscale silicon quantum‐dot transistors that operate at temperatures over 100 K and a bias higher than 0.07 V. In the tunneling regime, these transistors show strong current oscillations due to quantum confinement and single‐electron charging effects. In the propagating regime, a different kind of current modulation has been observed, which is attributed to the interference between different modes of quantum waves in a cavity. Proper scaling of these transistors should lead to operation at room temperature and a bias of 0.3 V.

Abstract: A thin palladium layer (∼40 A) was selectively formed on top of amorphous silicon films before annealing and the effects of palladium layer on the crystallization behavior of the amorphous silicon films were investigated. It was observed that the amorphous silicon right under the Pd layer could be crystallized to grain sizes of several hundred angstroms by annealing at 500 °C. In addition, the area between the Pd thin pads, patterned by lithography, was found to be crystallized to grain sizes of a few tens of microns in length by the same annealing. Such lateral crystallization was found to reach more than 100 μm in some cases. The lateral crystallization phenomenon might be useful for the fabrication of low temperature polycrystalline‐Si thin film transistors, providing large‐grained Si films.

Abstract: Zr41.2Ti13.8Cu12.5Ni10.0Be22.5 bulk metallic glasses were prepared by cooling the melt with a rate of about 10 K/s and investigated with respect to their chemical and structural homogeneity by atom probe field ion microscopy and transmission electron microscopy. The measurements on these slowly cooled samples reveal that the alloy exhibits phase separation in the undercooled liquid state. Significant composition fluctuations are found in the Be and Zr concentration but not in the Ti, Cu, and Ni concentration. The decomposed microstructure is compared with the microstructure obtained upon primary crystallization, suggesting that the nucleation during primary crystallization of this bulk glass former is triggered by the preceding diffusion controlled decomposition in the undercooled liquid state.

Abstract: Epitaxial growth of stoichiometric SiC on Si(111) and 2°–5° off‐oriented 6H–SiC(0001) substrates was carried out at low temperatures (800–1000 °C) by means of solid‐source molecular beam epitaxy controlled by a quadrupole mass spectrometry based flux meter. The films were obtained on Si‐stabilized surfaces showing (3×3) and (2×2) superstructures in the case of SiC(0001). The reflection high‐energy diffraction (RHEED) patterns and damped RHEED‐oscillations during the growth on 6H–SiC(0001) at T≳900 °C indicate that two‐dimensional nucleation on terraces is the dominant growth process.