Abstract: A new microlaser design based on the high‐reflectivity whispering‐gallery modes around the edge of a thin semiconductor microdisk is described and initial experimental results are presented. Optical confinement within the thin disk plane results in a microresonator with potential for single‐mode, ultralow threshold lasers. Initial experiments use selective etching techniques in the InP/InGaAsP system to achieve 3–10 μm diameter disks as thin as 500 A suspended in air or SiO2 on an InP pedestal. Optically pumped InGaAs quantum wells provide sufficient gain when cooled with liquid nitrogen to obtain single‐mode lasing at 1.3 and 1.5 μm wavelengths with threshold pump powers below 100 μW.

Abstract: A theoretical characterization of the guided‐mode resonance properties of planar dielectric waveguide gratings is presented. Efficient exchange of energy between forward and backward propagating diffracted waves is shown to be possible with smooth line shapes. The linewidths of the resonances can be controlled by the grating modulation amplitude. Due to the inherent separation between the TE and TM modes associated with the waveguide grating, these elements can provide polarization separation. Applications to polarization sensitive filtering and to electro‐optic switching are suggested. The guided‐mode resonance filter represents a basic new optical element.

Abstract: C‐axis oriented YBa2Cu3O7−x thin films are conventionally obtained on polycrystalline substrates, but a‐ and b‐axes are randomly distributed. Due to the weak links at the high‐angle grain boundaries in the a–b plane, the critical current density (Jc) are comparatively low, from 103 to 104 A/cm2 (77 K, 0 T), and the Jc decreases in magnetic field in a manner similar to bulk YBa2Cu3 O7−x samples. To reduce weak links at the high‐angle grain boundaries, biaxially oriented buffer layers of yttrium stabilized zirconia (YSZ) were formed on polycrystalline, Ni‐based alloy by ion‐beam assisted deposition (IBAD), and subsequently the a–b plane aligned YBa2Cu3 O7−x film was deposited by laser ablation. Jc of 2.5×105 A/cm2 (77 K, 0 T) and 2.2×104 A/cm2 (77 K, 8.0 T) were obtained. A new method to prevent intergranular weak links has been developed for potential applications using practical polycrystalline substrates.

Abstract: Near‐field scanning optical microscopy (NSOM) has been used to image and record domains in thin‐film magneto‐optic (MO) materials. In the imaging mode, resolution of 30–50 nm has been consistently obtained, whereas in the recording mode, domains down to ∼60 nm have been written reproducibly. Data densities of ∼45 Gbits/in.2 have been achieved, well in excess of current magnetic or MO technologies. A brief analysis of speed and other issues indicates that the technique may represent a viable alternative to these and other methods for anticipated high density data storage needs.

Abstract: It is demonstrated that photoluminescent porous Si (PS) layers exhibit definitely visible electroluminescence (EL). The PS layers were formed by anodization of single‐crystal nondegenerate p‐type Si wafers in an HF solution. The experimental EL cells are of the form semitransparent metal/PS layer/p‐type Si/Al electrode. These cells show a rectifying junction behavior. When the forward current density reaches a certain value, stable visible (orange) light is uniformly emitted through a semitransparent electrode. A possible explanation of this is the radiative transition due to electron and hole injection into quantized states in PS.

Abstract: Surface segregation of In atoms during molecular beam epitaxy (MBE) and its influence on the energy levels in InGaAs/GaAs quantum wells (QWs) were systematically studied using secondary‐ion mass spectroscopy (SIMS) and photoluminescence (PL). Strong dependence of In surface segregation on the growth conditions was found; when the growth temperature was raised from 370 to 520 °C, the segregation length was observed to increase from 0.8 up to 2.9 nm, accompanied by an appreciable peak energy shift in the PL spectra of the InGaAs/GaAs QWs. The correlation between In surface segregation and the energy levels in InGaAs/GaAs QWs was clarified for the first time.

Abstract: A novel concept of a light‐emitting diode (LED) is proposed and demonstrated in which the active region of the device is placed in a resonant optical cavity. As a consequence, the optical emission from the active region is restricted to the modes of the cavity. Resonant cavity light‐emitting diodes (RCLED) have higher spectral purity and higher emission intensity as compared to conventional light emitting diodes. Results on a top‐emitting RCLED structure with AlAs/AlxGa1−xAs quarter wave mirrors grown by molecular beam epitaxy are presented. The experimental emission linewidth is 17 meV (0.65 kT) at room temperature. The top‐emission intensity is a factor of 1.7 higher as compared to conventional LEDs.

Abstract: We report on the fabrication and characterization of photoconductive ultraviolet detectors based on insulating single‐crystal GaN. The active layer (GaN) was deposited over basal‐plane sapphire substrates using a unique switched atomic‐layer‐epitaxy process. The sensors were measured to have a responsivity of 2000 A/W at a wavelength of 365 nm under a 5‐V bias. The responsivity remained nearly constant for wavelengths from 200 to 365 nm and dropped by three orders of magnitude within 10 nm of the band edge (by 375 nm). We estimate our sensors to have a gain of 6×103 (for wavelength 365 nm) and a bandwidth in excess of 2 kHz. The photosignal exhibited a linear behavior over five orders of incident optical power, thereby implying a very large dynamic range for these GaN‐based ultraviolet sensors.

Abstract: Fatigue and retention characteristics of ferroelectric lead zirconate titanate thin films grown with Y‐Ba‐Cu‐O(YBCO) thin‐film top and bottom electrodes are found to be far superior to those obtained with conventional Pt top electrodes. The heterostructures reported here have been grown in situ by pulsed laser deposition on yttria‐stabilized ZrO2 buffer [100] Si and on [001] LaAlO3. Both the a‐ and c‐axis orientations of the YBCO lattice have been used as electrodes. They were prepared using suitable changes in growth conditions.

Abstract: Textured diamond films have been deposited on β‐SiC via microwave plasma chemical vapor deposition preceded by an in situ bias pretreatment that enhances nucleation. Approximately 50% of the initial diamond nuclei appear to be aligned with the C(001) planes parallel to the SiC(001), and C[110] directions parallel to the SiC[110] within 3°. The diamond was characterized by Raman spectroscopy and scanning electron microscopy.

Abstract: We have demonstrated a new technique to polarize locally micron‐sized areas of a ferroelectric vinylidene‐fluoride trifluoroethylene (VDF‐TrFE) copolymer film by locally applying a dc voltage between the tip of a scanning force microscope and the bottom electrode underneath the polymer film. To detect these polarized regions we have stimulated the film piezoelectrically by applying an ac electric field between tip and bottom electrode, and measuring locally amplitude and phase of the surface vibration. The size of the smallest region we could polarize so far was about 1 μm.

Abstract: Porous silicon that strongly emits in the visible was analyzed using Raman scattering. The spectrum peaks near 508 cm−1, has a width of ∼40 cm−1, and is very asymmetric. Using a model of phonon confinement, this suggests that the local structure of porous silicon is more like a sphere than a rod and has a characteristic diameter of 2.5–3.0 nm. Polarization Raman measurements suggest that the structure does not consist of a series of parallel columns.

Abstract: Strain compensation is an important aspect of heterostructure engineering. In this letter, we discuss the synthesis of pseudomorphic Si1−yCy and Si1−x−yGexCy alloy layers on a silicon (100) substrate by molecular beam epitaxy using solid sources and the controlled strain compensation that results from the introduction of the ternary system. The introduction of C into substitutional sites in the crystal lattice is kinetically stabilized by low‐temperature growth conditions (400–550 °C) against thermodynamically favored silicon‐carbide phases. The lattice constant in Ge is about 4% larger than in Si, whereas in diamond it is 52% smaller. Consequently, the compressive strain caused by 10.8% Ge in a pseudomorphic Si1−xGex alloy can be compensated by adding about 1% carbon into substitutional lattice sites of the film assuming Vegard’s law of linear change of the lattice constant in the alloy as a function of the composition. Using x‐ray diffraction, we observe a partial strain compensation in Si0.75−yGe0.25Cy...

Abstract: We report optical rectification and subsequent generation of subpicosecond submillimeter‐wave radiation from a nonlinear organic crystalline salt. With optical excitation at a wavelength of 820 nm and a 150 fs pulse duration, the magnitude of the rectified field from the organic salt dimethyl amino 4‐N‐methylstilbazolium tosylate is one and two orders of magnitude larger than that from GaAs and LiTaO3 crystals, respectively. This organic crystal presently provides the most intense terahertz radiated field among all of the natural nonexternally biased materials we know.

Abstract: The discovery of luminescence in electrochemically etched porous silicon is an extremely important scientific breakthrough with enormous technological implications. It opens the door for silicon, the most important microelectronic material, as a possible material for optoelectronics applications. Our result, a correlation of Raman and photoluminescence spectra, shows that the observed luminescence is originated from extremely small microstructures. As the luminescent peak increases in photon energy, the Raman feature shifts to lower energy, remaining sharp, and eventually splits, developing into TO and LO modes. No peak at 480 cm−1 is observed, which indicates no substantial contribution from an amorphous region. These data provide strong evidence of the role of microstructures in porous silicon.

Abstract: The silicide‐mediated phase transformation of amorphous to crystalline silicon was observed in situ in the transmission electron microscope. Crystallization of nickel‐implanted amorphous silicon occurred at ∼500 °C. Nickel disilicide precipitates were observed to migrate through an amorphous Si film leaving a trail of crystalline Si. Growth occurred parallel to 〈111〉 directions. High resolution electron microscopy revealed an epitaxial NiSi2/Si(111) interface which was Type A. A diffusion‐controlled mechanism for the enhanced crystallization rate was determined.

Abstract: Etching of Si in a variety of solutions is known to cause staining. These stain layers consist of porous material similar to that produced by anodic etching of Si in HF solutions. We have observed photoluminescence peaked in the red from stain‐etched Si wafers of different dopant types, concentrations, and orientations produced in solutions of HF:HNO3:H2O. Luminescence is also observed in stain films produced in solutions of NaNO2 in HF, but not in stain films produced in solutions of CrO3 in HF. The luminescence spectra are similar to those reported recently for porous Si films produced by anodic etching in HF solutions. However, stain films are much easier to produce, requiring no special equipment.

Abstract: Optical‐quality transparent conducting films of polyaniline (PANI) and of conducting polyblends of polyaniline with amorphous bulk polymers are described. Using functionalized protonic acids to induce solubility in common organic solvents, PANI and PANI polyblends can be cast from solution, in the conducting form, onto a variety of substrates. The resulting films are clear, and they combine low surface resistance with excellent transparency. By varying the thickness of the film and/or the volume fraction of PANI in the polyblend, the surface resistance can be controlled over an extraordinary broad range.

Abstract: Extended x‐ray absorption fine structure measurements from Er‐implanted Czochralski‐grown Si samples, which exhibit strong luminescence at 1.54 μm, reveal a local sixfold coordination around Er−not of Si−but of oxygen atoms at an average distance of 2.25 A. By contrast, similar concentrations of Er implanted in high purity float‐zone Si samples, which are essentially optically inactive, show that Er is coordinated to 12 Si atoms at a mean distance of 3.00 A.

Abstract: Laser trapping of a metal particle in water or a water droplet in liquid paraffin, which cannot be attained by irradiation of a TEM00 mode focused laser beam, was experimentally confirmed based on a scanning laser trapping technique. Although a metal particle or a water droplet experiences repulsive radiation force from a laser beam (1064 nm, focused into a ∼1 μm spot), scanning of the laser beam circularly around the particle was successful to optically trap and tweezer the particle. Water and ethylene glycol droplets dispersed in liquid paraffin were also shown to be manipulated independently by scanning double laser‐beam trapping.

Abstract: Results of a study on internal stress, hardness, and structure of nitrogen‐doped amorphous hydrogenated hard carbon films deposited by rf glow discharge from methane‐nitrogen mixtures onto silicon substrate are presented. Films obtained for different N2 partial pressures (bias voltage Vb=−370 V and total pressure P=8 Pa) were characterized by infrared spectroscopy, Raman scattering, and nuclear techniques. The elemental composition, density, and structure are correlated with Vickers hardness and internal stress values, obtained from the substrate bending method. It has been observed that internal stress considerably decreases with increasing nitrogen content, in contrast to hardness, structure, and hydrogen concentration, which remain unchanged.

Abstract: We have confirmed the presence of a two‐dimensional electron gas (2DEG) in a wide band‐gap GaN‐AlxGa1−xN heterojunction by observing steplike features in the quantum Hall effect. The 2DEG mobility for a GaN‐Al0.13Ga0.87N heterojunction was measured to be 834 cm2/V s at room temperature. It monotonically increased and saturated at a value of 2626 cm2/V s at 77 K. The 2DEG mobility remained nearly constant for temperatures ranging from 77 to 4.2 K. Using Shubnikov–de Haas (SdH) measurements the two‐dimensional carrier concentration was estimated to be 1×1011 cm−2. The peak mobility for the 2DEG was found to decrease with the heterojunction aluminum compositions in excess of 13%.

Abstract: We describe a low‐resistance quasi‐ohmic contact to p‐ZnSe which involves the injection of holes from heavily doped ZnTe into ZnSe via a Zn(Se,Te) pseudograded band gap region. The specific contact resistance is measured to be in the range of 2–8×10−3 Ω cm2. The graded heterostructure scheme is incorporated as an efficient injector of holes for laser diode and light emitting diode devices, demonstrating the usefulness of this new contact scheme at actual device current densities.

Abstract: A type IIa natural diamond was irradiated at room temperature with energetic electrons. The threshold energy for displacement of atoms from their lattice sites was determined for three principal crystallographic directions by observing the formation of defect clusters during irradiation in a transmission electron microscope. The displacement‐threshold energies were found to be 37.5±1.2 eV for the electron incident in the [100] direction, 45.0±1.3 eV in the [111] direction, and 47.6±1.3 eV in the [110] direction.

Abstract: We report the preparation of silicon‐based visible light‐emitting diodes, configured as heterojunctions between porous silicon (formed by electrochemical etching of p‐type silicon wafers), and n‐type indium tin oxide (ITO). The transparent ITO film allows light emission through the top surface of the device, under a forward electrical bias of several volts across the junction. Photogenerated currents are observed under reverse biases. A tentative model for this electroluminescence is presented, based on injection of minority carriers through a narrow interphase region into the porous silicon structure, where radiative recombination occurs.

Abstract: We demonstrate a new use of the atomic force microscope (AFM) for nanometer‐scale lithography on ultrathin films of poly(methylmethacrylate) (PMMA). The PMMA films were chemically modified as both positive and negative resists due to energy transfer from a highly localized electron source provided by metallized AFM tips. We were able to fabricate a line pattern with 68 nm line periodicity with about 35 nm line widths.

Abstract: We have measured the noise of a Coulomb blockade electrometer. Below 100 Hz, the noise referred to the input charge has a 1/f power spectrum with a charge noise of 3×10−4 e/√Hz and an energy sensitivity EN of 3×104 ℏ at 10 Hz. The 1/f noise probably results from the stochastic occupation of charge traps which could in principle be eliminated. The theoretical noise floor is set by shot noise, and indirect measurements show that this contribution to EN can be as small as 1.5 ℏ, suggesting that the electrometer will be a quantum limited amplifier if the 1/f noise can be eliminated.

Abstract: Taking into account the discrete nature of the quantum‐well intersubband infrared detectors, we construct a model to calculate the photoconductive gain. It is shown that the photoconductive gain is inversely proportional to the number of quantum wells and that the detector‐current responsivity is independent of the number of wells.

Abstract: A highly sensitive photodetector was made with a metal‐porous silicon junction. The spectral response was measured for the wavelength range from 400 nm to 1.075 μm. It was demonstrated that close to unity quantum efficiency could be obtained in the wavelength range of 630–900 nm without any antireflective coating. The detector response time was about 2 ns with a 9 V reverse bias. The possible mechanisms are discussed.