The invention relates to a method for preparing a pyramid array on a monocrystalline silicon substrate, and belongs to the technical field of manufacture of photovoltaic and semiconductor devices. The method comprises the following steps of: covering microballons in periodic arrangement on the surface of a monocrystalline silicon piece, and annealing near the glass transition temperature point of the microballoon; in oxygen atmosphere, obtaining a microballoon array in separation arrangement after etching by use of inductive coupling plasma; depositing a metallic titanium membrane on the monocrystalline silicon piece uniformly by a physical vapor deposition manner; and putting a silicon wafer with a masking film into an alkaline solution containing a surfactant for corrosion so as to obtain the pyramid array in order arrangement. The method is simple in process, short in preparation period and mature in technology; and three structures such as a positive pyramid array, an inverted pyramid array and a positive and inverted pyramid combined array can be obtained by a method for preparing a template through selecting and fine turning. The method has wide application value in the fields of photovoltaic, magnetic memory devices, nano photoelectric devices, nano sensors, surface raman enhancement and surface plasma effect and the like.

Method for preparing pyramid array on monocrystalline silicon substrate

The invention discloses a silicon substrate nano-structure for a solar cell and a preparing method thereof, and the method includes: cleaning silicon chips; spin-coating and covering single layer polystyrene (PS) spheres on the surface of the silicon chips; etching the PS spheres and reducing the sizes of the PS spheres; depositing a metal film layer on the surface of the silicon chip surface and forming metal mask; removing residual PS spheres on the silicon chip surface and remaining for the left metal masking layer; forming the silicon substrate nano-structure by using a dry etching or wet etching method; treating the silicon chips by heated concentrated acid and removing the residual metal and finishing the preparation of the silicon substrate nano-structure According to the silicon substrate nano-structure for the solar cell and the preparing method thereof, PS spheres masking and metal film growth are utilized and the dry etching method and the wet etching method are combined so that a preparing method of silicon substrate nano-structure for the solar cell is provided According to the silicon substrate nano-structure, the reflectivity is low, the light trapping ability is of high efficient, the light absorption of the solar cell is enhanced and the efficiency of the solar cell is improved

Silicon substrate nano-structure for solar cell and preparing method thereof

The invention discloses a novel metal cup-cylinder composite nano structure array which is formed by sequential arrangement of metal nano structure array units. The metal nano structure array units are of a metal cup-cylinder composite nano structure which comprises a cup-shaped metal nano outer wall, and the center of a cup groove formed by the metal nano outer wall is a cylindrical metal nano particle. The invention also discloses a preparation method of the metal nano structure array, and the preparation method comprises the processing steps of preparing a single-layer orderly polrvinyl benzene nano ball compact arrangement, preparing a single-layer orderly polrvinyl benzene nano ball non-compact arrangement, preparing a nano annular-structure array mask made of composite materials, preparing a silicon-nano-structure array template, preparing the metal cup-cylinder composite nano-structure array, and the like. The metal nano array structure provided by the invention has gaps with smaller nano sizes and can be used for realizing the Roman detection of a single biomolecule; and according to the preparation method, the compatibility is good, the efficiency is high and the cost is low.

Metal cup-cylinder composite nano structure array and preparation method thereof

The invention discloses a method for preparing a triangular metal nano-pore array. The method comprises the following steps of: preparing a double-layer ordered polystyrene nano sphere compact arrangement, preparing a lower-layer trivalvular arrangement and an upper-layer polystyrene nano sphere non-compact arrangement, preparing a metal mask with a triangular nano-pore array structure, preparing a triangular silicon nano-pore array template, preparing a triangular metal nano-pore array and the like. The preparation method is high in generality, wide in adaptability, high in compatibility, high in efficiency and low in cost, and can provide convenience for the study of the characteristics of arrays with metal nano structures.

Method for preparing triangular metal nano-pore array

The invention relates to a preparation method of a photonic crystal scintillator by using a polymer template. The preparation method comprises four steps of preparation of a polymer microballoon array on the surface of the scintillator, reactive ion beam etching, coating of a cover layer, and removal of the microballoon to prepare and obtain a corresponding photonic crystal with an inverse opal structure of a medium material, that is to say to obtain a transparent medium with high refractive index and hexagonal periodical hole structure on the surface of the scintillator. Compared with the prior art, the photonic crystal prepared by the invention has large area and large refractive index contrast, has no polymer component, can guarantee enough light extraction efficiency, and can guarantee enough anti-radiation performance in the nuclear radiation environment.

Preparation method of photonic crystal scintillator by using polymer template

The invention relates to a preparation method for a small silicon-based nano hollow array with orderly heights, belonging to the technical field of nano-structure preparation. The preparation method employs large-diameter polystyrene nano-spheres which are self-mounted into a single-layer nano-sphere film serving as masks on a Si substrate. After going through multiple technical procedures such as reaction ion lithography, direct current sputtering metal films, selective corrosion and the like, the mask is converted into a small inverted-pyramidal nano-hollow array, which is a two-dimensionalhexagonal dot array. The cycle of the nano-hollow arrays is determined by the diameters initially selected for the polystyrene nano-spheres. The invention is likely to be used in fields of growth of controllable quantum structures, photonic crystal manufacturing, quantum logic operation, magnetic storage media, etc.

Preparation method for small silicon-based nano hollow array with orderly heights

The invention belongs to the technical field of manufacturing of nano structures, and particularly relates to a method for manufacturing ultrahigh-density germanium silicon quantum dots based on an obliquely-cut silicon substrate. An obliquely-cut Si (001) single crystal wafer is used as the substrate, chemical cleaning is carried out on the single crystal wafer, the wafer is placed in molecular beam epitaxy equipment for high-temperature impurity removing, firstly a layer of silicon buffer layer grows epitaxially, germanium materials grow finally in a heteroepitaxy mode, and therefore the ultrahigh-density germanium silicon quantum dots are obtained. According to the simple, practical and affordable method, the high-quality ultrahigh-density silicon quantum dots are obtained. According to the method, the problems that when the high-density quantum dot materials are manufactured in the prior art, the process is tedious and the quality is not high are solved, and according to the high-quality and high-density quantum dot material manufactured by the method, the photoelectric conversion efficiency based on a quantum dot device is greatly improved.

Method for manufacturing ultrahigh-density germanium silicon quantum dots based on obliquely-cut silicon substrate

The invention belongs to the technical field of semiconductor micro-nano structure preparation, in particular to a method for preparing a silicon-germanium alloy micro-disk based on a silicon substrate. The preparation method comprises the steps: growing a silicon-germanium alloy film on a Si(001) single-crystal substrate by a molecular beam epitaxy device or other growth devices, and then using template pattern transfer and chemoselective etching to obtain a high-quality silicon germanium micro-disk. The present invention provides a simple and economical method for obtaining the high-qualitysilicon-germanium alloy micro-disk. The method overcomes the difficulty of preparing a silicon-based optical micro-disk directly on a silicon substrate in the prior art. The silicon-germanium micro-disk on the silicon substrate prepared by the invention provides a new idea for the development of silicon-based photovoltaic devices.

Method for preparing silicon-germanium alloy micro-disk based on silicon substrate

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Preparation method for small silicon-based nano hollow array with orderly heights

Method for manufacturing ultrahigh-density germanium silicon quantum dots based on obliquely-cut silicon substrate

Method for preparing silicon-germanium alloy micro-disk based on silicon substrate