Zhan Wei Shen
Chinese Academy of Sciences
15 Papers
5 Citations
Zhan Wei Shen is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Epitaxy & Layer (electronics). The author has an hindex of 1, co-authored 2 publications.
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Papers
Growth of 4H-SiC epitaxial layers at temperatures below 1500°C using trichlorosilane (TCS)
Shangyue Yang,Siqi Zhao,Junhong Chen,Guo Guo Yan,Zhan Wei Shen,Wanshun Zhao,Lei Wang,Yang Zhang,Xingfang Liu,Guosheng Sun,Yiping Zeng +10 more
TL;DR: In this article , TCS was used as the silicon precursor and epitaxial layers were grown in the temperature range of 1350-1500 °C, and the results showed that the single crystal type 4H-SiC epitaxia layer with good quality can be obtained at the growth temperature of 1450 ℃.
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Characterization of epitaxial layers grown on 4H-SiC (000-1) substrates
Junhong Chen,Min Guan,Shangyue Yang,Siqi Zhao,Guo Guo Yan,Zhan Wei Shen,Wanshun Zhao,Lei Wang,Xingfang Liu,Guosheng Sun,Yiping Zeng +10 more
TL;DR: In this paper , the authors investigated the epitaxial growth of SiC on n-type 4° off-axis SiC (0 0 0 0-1) substrates.
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Influence of H2 treatment on the surface morphology of SiC with different wafer orientation and doping
TL;DR: In this paper , H2-etched SiC wafers comprising various crystal planes were analyzed in detail, showing that H2 treatment is beneficial for achieving smoother surface morphology of C-face than Si-face wafer, as well as realizing ∼15 % to ∼51 % decrement in average roughness.
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Effect of Temperature on Growth of Epitaxial Layer on Semi-insulating 4H-SiC Substrate
Siqi Zhao,Junhong Chen,Shangyue Yang,Guo Guo Yan,Zhan Wei Shen,Wanshun Zhao,Lei Wang,Xingfang Liu,Guosheng Sun,Yiping Zeng +9 more
TL;DR: In this paper , the effect of temperature on the epitaxial layer during epitaxy on 4H-SiC SI substrates using trichlorosilane and ethylene as source gases was studied.
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A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics
Xiaojie Wang,Zhan Wei Shen,Guoliang Zhang,Yuyang Miao,Tiange Li,Xiaogang Zhu,Jiafa Cai,Rongdun Hong,Xiaping Chen,D Q Lin,Shao-Xiong Wu,Yuning Zhang,Deyi Fu,Peng Zhang +13 more
TL;DR: In this paper , a 4H-SiC trench gate metal-oxide-semiconductor field effect transistor (UMOSFET) with semi-super-junction shielded structure (SS-UMOS) is proposed and compared with conventional trench MOS-FET.
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