The graphene electronic device may include a gate oxide on a conductive substrate, the conductive substrate configured to function as a gate electrode, a pair of first metals on the gate oxide, the pair of the first metals separate from each other, a graphene channel layer extending between the first metals and on the first metals, and a source electrode and a drain electrode on both edges of the graphene channel layer.

Graphene electronic device and method of fabricating the same

The invention provides an OLED device with improved light out-coupling, which can be manufactured easy and reliable at low costs, which comprises an electroluminescent layer stack (2, 3, 4) on top of a substrate (1), where the electroluminescent layer stack (2, 3, 4) comprises an organic light-emitting layer stack (3) with one or more organic layers sandwiched between a first electrode (2) facing towards the substrate (1) and a 10 second electrode (4), where the second electrode (4) comprises a layer stack of at least a transparent conductive protection layer (41) on top of the organic light-emitting layer stack (3), a transparent organic conductive buckling layer (42) on top of the protection layer (41) having a glass transition temperature lower than the lowest glass transition temperature of the organic layers within the organic light-emitting layer stack (3) and a stress inducing layer 15 (43) on top of the buckling layer (42) to introduce stress to the buckling layer (42). The invention further relates to a method to manufacture such OLED devices with heating the electroluminescent layer (2, 3, 4) stack to a temperature, which is above the glass transition temperature of the buckling layer (42) and below the lowest glass transition temperature of the organic layers within the organic light-emitting layer stack (3) for a time period sufficient 20 to obtain buckles (B) within the buckling layer (42).

Organic electroluminescent device.

An electronic device comprises an insulator, a local first gate embedded in the insulator with a top surface of the first gate being substantially coplanar with a surface of the insulator, a first dielectric layer formed over the first gate and insulator, and a channel The channel comprises a bilayer graphene layer formed on the first dielectric layer The first dielectric layer provides a substantially flat surface on which the channel is formed A second dielectric layer formed over the bilayer graphene layer and a local second gate formed over the second dielectric layer Each of the local first and second gates is capacitively coupled to the channel of the bilayer graphene layer The local first and second gates form a first pair of gates to locally control a first portion of the bilayer graphene layer

Graphene Devices with Local Dual Gates

The invention discloses a method for preparing single-layer or multi-layer graphene through chemical vapor deposition, and relates to a method for preparing a graphene material. The method comprises the following steps of: placing a metal substrate in a vacuum tubular furnace or a vacuum atmosphere furnace; injecting hydrogen into a vacuum cavity under the situation of removing the oxygen in the vacuum cavity; heating to 800-1,100 DEG C; and injecting a carbon source gas into the vacuum cavity to obtain the metal substrate for depositing graphene. According to the method disclosed by the invention, a graphene film is deposited by cracking methane or other carbon source gases on the metal substrate (such as a copper foil or a nickel foil and the like) at a high temperature by using the chemical vapor deposition method; and therefore, the invention provides a method for preparing the single-layer or multi-layer graphene with an ultra-large area.

Method for preparing single-layer or multi-layer graphene through chemical vapor deposition

A method for making a graphene/carbon nanotube composite structure includes providing a metal substrate including a first surface and a second surface opposite to the first surface, growing a graphene film on the first surface of the metal substrate by a CVD method, providing at least one carbon nanotube film structure on the graphene film, and combining the at least one carbon nanotube film structure with the graphene film, and combining the polymer layer with the at least one carbon nanotube film structure and the graphene film, and forming a plurality of stripped electrodes by etching the metal substrate from the second surface.

Method for making graphene/carbon nanotube composite structure

The invention provides a method for preparing a graphene membrane electrode with overlarge area and high quality, which comprises the following steps of: placing a spiral or S-shaped quartz tank provided with a metal foil into a reactor by adopting a chemical vaporous deposition method, introducing a hydrocarbon for catalytic decomposition to obtain a graphene membrane on the metal foil; attaching an organic colloid on the product to obtain an organic colloid/grapheme/metal foil combination; removing the metal foil by using metal foil corrosive liquid to obtain an organic colloid/grapheme combination; taking out the product in the previous step by using a substrate, placing the product into deionized water, washing and drying to obtain an organic colloid/grapheme/ substrate combination; finally, removing the organic colloid by using an organic solvent, taking out and naturally drying to obtain the graphene membrane electrode with overlarge area and high quality, which is positioned onthe substrate. The method has simple operation step, large area of the obtained product, low raw material cost, high electrical conductivity and high light transmittance, and is mainly used for the fields of semiconductors, solar batteries, liquid crystal panel display, and the like.

Method for preparing graphene membrane electrode with overlarge area and high quality

The invention belongs to the technical field of electronic components, and relates to a field effect transistor, in particular to a field effect transistor which takes graphene as a double-gate structure of a conducting layer. The graphene field effect transistor comprises a substrate gate electrode, a lower gate dielectric material, an upper gate dielectric material, graphene, a source electrodeand a leakage electrode, wherein the graphene is positioned between the upper and the lower gate dielectric materials, and the source electrode and the leakage electrode are respectively positioned at the two ends of the graphene. The invention adopts the double-gate materials, i.e. a layer of upper dielectric material is added on the surface of the graphene channel region of the graphene field effect transistor, so the graphene channel region is enclosed between the upper and the lower gate dielectric materials to be prevented from being disturbed by the outside, and thereby the scattering is reduced, and the mobility and the switching characteristics of the transistor are effectively improved.

Graphene field effect transistor

The invention provides a method for transferring a graphene film, belongs to the technical field of materials, and relates to a graphene semiconductor film material, in particular to a method for transferring a large-area and damage-free graphene film from the surface of a preparation substrate to the surface of a target substrate. The method comprises the following steps of: vortically coating organic colloid on the surface of graphene and drying the organic colloid; corroding the substrate material of the original graphene film by using chemical corrosive solution; paving the combination of the graphene film and the organic colloid on the target substrate; and finally dissolving the organic colloid to complete the transfer of the graphene film to the target substrate. The method for transferring the graphene film, provided by the invention, can conveniently transfer the large-area graphene film to any target substrate without causing serious damages; and the transfer area of the graphene film reaches several square inches, the process is simple, the operation is convenient, the cost is low, and the method can also be used for preparing a graphene semiconductor device with the semiconductor process.

Method for transferring graphene film

The invention relates to a bismuth-based dielectric material for a microwave tuning component. Through the research on the dielectric tuning mechanism of a bismuth zinc niobate material with a structure of bismuth-based pyrochlore and based on the in-depth understanding of the dielectric tuning mechanism of materials with a bismuth-based pyrochlore structure, the invention provides an assumption and an executive plan to strengthen the dielectric tunable characteristics of the materials with the bismuth-based pyrochlore structure, and discloses a dielectric material for microwave tuning and a method for preparing the same. The chemical composition of the bismuth-based dielectric material for the microwave tuning is Bi1.5MNb1.5O7, wherein M is a bivalent metal cation, the ion radius of the M is smaller than that of Zn; particularly, the M ion is Mg ion, and the chemical formula of the dielectric material is Bi1.5MgNb1.5O7. The invention also discloses a method for preparing the bismuth-based dielectric material for the microwave tuning. The dielectric material of the invention is an excellent dielectric material applied to a voltage-controlled microwave frequency component.

Bismuth-based dielectric material for microwave tuning and preparation thereof

The invention discloses a graphene dye sensitized solar cell and a production method thereof. The solar cell comprises a light anode comprising transparent upper base material and graphene conducting layer, a porous nano semiconductor film and a dye sensitizer, oxidation reduction electrolyte solution, a counter electrode comprising a lower base and graphene conducting layer and a composite catalytic layer as well as a film shell. The production method comprises the steps of preparing the light anode, preparing the counter electrode, encapsulating and injecting the electrolyte solution. In the invention, graphene with an available raw material, low cost, good conductive performance, extremely high flexibility and good ductibility is adopted as the conducting layer, the flexible transparent material is adopted as a substrate, and platinum metal particles are embedded on the graphene conducting layer of the counter electrode by adopting adsorption instead of magnetron sputtering to form the composite catalytic layer. Thus, the invention has the characteristics that the raw material is available, the production cost is low, the production process is simple and reliable, the flexible solar cell can be produced and applied to the flexible field, and the application range is effectively expanded.

Graphene dye sensitized solar cell and production method thereof

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