Yih-Der Guo
Industrial Technology Research Institute
16 Papers
144 Citations
Yih-Der Guo is an academic researcher from Industrial Technology Research Institute. The author has contributed to research in topics: Layer (electronics) & Epitaxy. The author has an hindex of 5, co-authored 16 publications.
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Papers
Patent
Method of manufacturing a light emitting diode element
Jenq-Dar Tsay,Suh-Fang Lin,Yu-Hsiang Chang,Yih-Der Guo,Sheng-Huei Kuo,Wei-Hung Kuo,Hsun-Chih Liu +6 more
- 29 Dec 2009
TL;DR: In this article, a light emitting diode element is constructed on an epitaxy substrate, where a patterned reflector is formed directly on each of the epitaxy structures and a lift-off process is performed to separate the epitaxys from the substrate.
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Patent
Fabricating method of nitride semiconductor substrate and composite material substrate
Po-Chun Liu,Wen-Yueh Liu,Chih-Ming Lai,Yih-Der Guo,Jenq-Dar Tsay +4 more
- 25 Aug 2006
TL;DR: In this paper, a fabricating method of nitride semiconductor substrate is provided, where a first substrate including a first base material, a first dielectric layer and the first template layer of the first substrate are transferred onto the second base material through bonding and transferring processes.
11
Patent
Island submount and a method thereof
Yih-Der Guo,Jenq-Dar Tsay,Po-Chun Liu +2 more
- 30 Nov 2007
TL;DR: In this article, an island submount is used for carrying at least one light-emitting element having at least 1 electrical contact, and a conductive layer is formed on the surface of the island structure and at least covers the top surface, so as to be electrically connected with the electrical contact.
11
Patent
Nitride semiconductor structure and method for manufacturing the same
Yih-Der Guo,Suh-Fang Lin,Wei-Hung Kuo,Po-Chun Liu,Tung-Wei Chi,Chu-Li Chao,Jenq-Dar Tsay +6 more
- 14 Sep 2009
TL;DR: In this article, a nitride semiconductor substrate and a method for manufacturing the same are provided. But they do not specify a manufacturing procedure for the nitride pillar layer, which consists of a plurality of first and second patterned arranged pillars and a mask layer.
10
Influence of Growth Temperature on Surface Morphologies of GaN Crystals Grown on Dot-Patterned Substrate by Hydride Vapor Phase Epitaxy
TL;DR: In this paper, the influence of growth temperatures in the range 825 to 1050 ∘C on the surface morphologies of GaN crystals grown on a SiO2 dot-patterned substrate using ELO and Hydride Vapor Phase Epitaxy (HVPE) techniques was investigated.
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