Xuemei Chen
GlobalFoundries
13 Papers
46 Citations
Xuemei Chen is an academic researcher from GlobalFoundries. The author has contributed to research in topics: Extreme ultraviolet lithography & Flatness (systems theory). The author has an hindex of 4, co-authored 13 publications.
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Papers
Edge placement error fundamentals and impact of EUV: will traditional design-rule calculations work in the era of EUV?
Allen H. Gabor,Andrew C. Brendler,Timothy A. Brunner,Xuemei Chen,James A. Culp,Harry J. Levinson +5 more
TL;DR: The relationship between edge placement error (EPE), semiconductor design- rule determination, and predicted yield in the era of EUV lithography is examined, starting with the basics of EPE and then building up to design-rule calculations.
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EPE fundamentals and impact of EUV: Will traditional design-rule calculations work in the era of EUV?
Allen H. Gabor,Andrew C. Brendler,Timothy A. Brunner,Xuemei Chen,James A. Culp,Harry J. Levinson +5 more
- 30 Mar 2018
TL;DR: Stochastics can be treated as an effective dose variation that is fully sampled across every chip and combined with increased within chip variation from EUV with the understanding that across chip variation of design-rule important values needs to not cause a yield loss at significantly higher sigma values than have traditionally been looked at.
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Evaluation of EUV mask impacts on wafer line-edge roughness using aerial and SEM image analyses
Xuemei Chen,Erik Verduijn,Obert Wood,Timothy A. Brunner,Renzo Capelli,Dirk Hellweg,Martin Dietzel,Grizelda Kersteen +7 more
- 27 Mar 2018
TL;DR: In this paper, the impact of EUV mask roughness on the printed linewidth roughness (LWR) was analyzed using actinic aerial images and wafer SEM images.
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Level crossing methodology applied to line-edge roughness characterization
TL;DR: In this article, a new methodology, the level crossing method, is used to characterize the statistical behavior of edge roughness with the goal of predicting extreme events using experimental results from EUV lithography, the distribution of edge deviations was found to have tails significantly heavier than a normal distribution.
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Minimizing wafer overlay errors due to EUV mask non-flatness and thickness variations for N7 production
TL;DR: An updated assessment of the overlay impacts from EUV mask blanks as relevant to N7 is provided, and the effectiveness of high-order scanner correction and mask compensation in minimizing the mask blank induced overlay to meet the allocated N7 overlay budget is evaluated.
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