Wontae Noh
Air Liquide
26 Papers
153 Citations
Wontae Noh is an academic researcher from Air Liquide. The author has contributed to research in topics: Atomic layer deposition & Thin film. The author has an hindex of 10, co-authored 26 publications. Previous affiliations of Wontae Noh include Yonsei University.
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Papers
Hydrophobicity of Rare Earth Oxides Grown by Atomic Layer Deposition
Il Kwon Oh,Kangsik Kim,Zonghoon Lee,Kyung Yong Ko,Chang Wan Lee,Su Jeong Lee,Jae Min Myung,Clement Lansalot-Matras,Wontae Noh,Christian Dussarrat,Hyungjun Kim,Han-Bo-Ram Lee +11 more
TL;DR: In this paper, thermal and plasma-enhanced ALD (PE-ALD) Er2O3 and Dy 2O3 were developed using the newly synthesized Er and Dy precursors bis-methylcyclopentadienyl-diisopropyl-acetamidinate-erbium and bis-isoprocessionyl-dysprosium, with H2O and O2 plasma counter oxidants.
128
Patent
Vanadium-containing film forming compositions and vapor deposition of vanadium-containing films
Clement Lansalot-Matras,Wontae Noh +1 more
- 15 Apr 2016
TL;DR: Vanadium-containing film forming compositions are disclosed in this paper, along with methods of synthesizing the same, and methods of forming Vanadium containing films on one or more substrates via vapor deposition processes using the Vanadiumcontaining film-forming compositions.
95
Atomic layer deposition of Y2O3 films using heteroleptic liquid (iPrCp)2Y(iPr-amd) precursor
In Sung Park,Yong Chan Jung,Sejong Seong,Jinho Ahn,Jiehun Kang,Wontae Noh,Clement Lansalot-Matras +6 more
TL;DR: In this paper, a polycrystalline cubic Y2O3 film is fabricated by ALD technique using (iPrCp)2Y(iPr-amd) and water as the precursors.
68
Atomic layer deposition of Y2O3 and yttrium-doped HfO2 using a newly synthesized Y(iPrCp)2(N-iPr-amd) precursor for a high permittivity gate dielectric
Jae Seung Lee,Woo-Hee Kim,Il Kwon Oh,Min Kyu Kim,Gyeongho Lee,Chang Wan Lee,Jusang Park,Clement Lansalot-Matras,Wontae Noh,Hyungjun Kim +9 more
TL;DR: In this paper, the effects of yttrium doping in HfO 2 dielectric layer, focusing on structural phase transformation and the dielectrics properties of the resultant films, were investigated.
62
The effect of La2O3-incorporation in HfO2 dielectrics on Ge substrate by atomic layer deposition
Il Kwon Oh,Min Kyu Kim,Jae Seung Lee,Chang Wan Lee,Clement Lansalot-Matras,Wontae Noh,Jusang Park,Atif Noori,David Thompson,Schubert S. Chu,Wan-Joo Maeng,Hyungjun Kim +11 more
TL;DR: In this article, the electrical properties of HfO 2 and La 2 O 3 precursors were compared using X-ray photo-electron spectroscopy (XPS).
38