Wentao Qian
8 Papers
Wentao Qian is an academic researcher. The author has contributed to research in topics: Medicine & Nanowire. The author has an hindex of 2, co-authored 6 publications.
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Papers
Highly Stretchable High‐Performance Silicon Nanowire Field Effect Transistors Integrated on Elastomer Substrates
Xiaopan Song,Ting Zhang,Lei Wu,Ruijin Hu,Wentao Qian,Zongguang Liu,Junzhuan Wang,Yi Shi,Jun Xu,Kunji Chen,Linwei Yu +10 more
TL;DR: In this article , an orderly array of slim SiNW channels, with a diameter of <80 nm, can be precisely grown into desired locations via an inplane solid-liquid-solid (IPSLS) mechanism, and reliably batch-transferred onto large area polydimethylsiloxane (PDMS) elastomers.
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Ultra-Confined Catalytic Growth Integration of Sub-10 nm 3D Stacked Silicon Nanowires Via a Self-Delimited Droplet Formation Strategy.
Ruijin Hu,Yifei Liang,Wentao Qian,Xin Gan,Lei Liang,Junzhuan Wang,Zongguang Liu,Yi Shi,Jun Xu,Kunji Chen,Linwei Yu +10 more
TL;DR: In this article , 3D stacked ultrathin Si nanowires (SiNWs) are demonstrated, with width and height of Wnw ǫ = 9.9 ± 1.2 nm (down to 8µnm) and Hnw Ò 18.8± 1.8 nm, that can be reliably grown into the ultrafine sidewall grooves, approaching to the critical dimension of 10õnm technology node, thanks to a new self-delimited droplet control strategy.
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Converging-guiding-track design enables 100% growth deployment rate of ultrathin monocrystalline silicon nanowire channels
TL;DR: In this article , a converging-guiding-track strategy was proposed to achieve 100% GDR of ultra-dense and uniform ultrathin silicon nanowires (SiNWs) array, with diameter and spacing of only Dnw = 22.5±3.5
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High-Performance Gate-All-Around Field Effect Transistors Based on Orderly Arrays of Catalytic Si Nanowire Channels
Wei Liao,Wentao Qian,Junyang An,Lei Liang,Zhiyan Hu,Junzhuan Wang,Linwei Yu +6 more
TL;DR: Researchers developed high-performance gate-all-around field-effect transistors using catalytic silicon nanowire channels, achieving a high on/off current ratio of 107 and steep subthreshold swing of 66 mV dec-1, closing the performance gap with state-of-the-art devices.
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High-fidelity Moulding Growth and Cross-section Shaping of Ultrathin Monocrystalline Silicon Nanowires
Yifei Liang,Wentao Qian,Ruijin Hu,Xin Gan,Shuqi Shi,Yating Li,Junzhuan Wang,Zongguang Liu,Daowei He,Yi Shi,Jun Xu,Kunji Chen,Linwei Yu +12 more
TL;DR: In this paper , a high-fidelity molding growth of orderly ultrathin monocrystalline SiNWs, with diameter of 17±2nm, has been accomplished within tightly confined nanogrooves.
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