By doping an organic compound functioning as an electron donor (hereinafter referred to as donor molecules) into an organic compound layer contacting a cathode, donor levels can be formed between respective LUMO (lowest unoccupied molecular orbital) levels between the cathode and the organic compound layer, and therefore electrons can be injected from the cathode, and transmission of the injected electrons can be performed with good efficiency. Further, there are no problems such as excessive energy loss, deterioration of the organic compound layer itself, and the like accompanying electron movement, and therefore an increase in the electron injecting characteristics and a decrease in the driver voltage can both be achieved without depending on the work function of the cathode material.

Light Emitting Device

The embodiments of the present invention generally relates to methods for enhancing the light extraction by surface roughening of the bottom n-GaN layer and/or top p-GaN layer so that the internal light from the active region is scattered outwardly to result in a higher external quantum efficiency. In one embodiment, a surface roughening process is performed on the n-GaN layer to form etching pits in a top surface of the n-GaN layer. Once the etching pits are formed, growth of the n-GaN material may be resumed on the roughened n-GaN layer to partially fill the etching pits, thereby forming air voids at the interface of the n-GaN layer and the subsequent, re-growth n-GaN layer. These air voids provide one or more localized regions with indices of reflection different from that of the n-GaN layer, such that the internal light generated by the active layers (e.g., the InGaN MQW layer), when passing through the n-GaN layer, is scattered by voids or bubbles. The surface roughening process may be further performed on a top surface of a p-GaN layer to scatter the light emitted from the active layers outwardly rather than being reflected back to the active layers.

Enhancement of LED light extraction with in-situ surface roughening

A light emitting device includes a substrate, a light-emitting diode chip mounted on the substrate, a Zener diode chip mounted next to the light-emitting diode chip on the substrate, a frame-like dam material formed on the substrate to surround the light-emitting diode chip and the Zener diode chip, and a light-reflective resin injected inside the dam material to coat side surfaces of the light-emitting diode chip and side surfaces and an upper surface of the Zener diode chip. A part of the frame-like dam material swells outward to surround three of the side surfaces of the Zener diode chip.

Light Emitting Device And Method For Manufacturing The Same

The light-emitting apparatus comprises a substrate, a first semiconductor layer formed on the substrate, a light-emitting layer formed on the first semiconductor layer, a second semiconductor layer formed on the light-emitting layer, a first transparent conductive oxide layer formed on the second semiconductor layer, a reflective metal layer form on the transparent conductive oxide layer, and a first electrode formed on the reflective metal layer; characterized in that the first transparent conductive oxide layer is formed with a plurality of cavities on the interface between the first transparent conductive oxide layer and the reflective metal layer for improving the adhesion strength therebetween.

Light-emitting apparatus

In one embodiment, a semiconductor device wafer (10) contains electrical components and has electrodes (28) on a first side of the device wafer (10). A transparent carrier wafer (30) is bonded to the first side of the device wafer (10) using a bonding material (32) (e.g., a polymer or metal). The second side of the device wafer (10) is then processed, such as thinned, while the carrier wafer (30) provides mechanical support for the device wafer (10). The carrier wafer (30) is then de-bonded from the device wafer (10) by passing a laser beam (46) through the carrier wafer (30), the carrier wafer (30) being substantially transparent to the wavelength of the beam. The beam impinges on the bonding material (32), which absorbs the beam's energy, to break the chemical bonds between the bonding material (32) and the carrier wafer (30). The released carrier wafer (30) is then removed from the device wafer (10), and the residual bonding material is cleaned from the device wafer (10).

Laser de-bond of carrier wafer from device wafer

A light emitting device includes a substrate; an LED chip, disposed on the substrate; and a fluorescent layer. The fluorescent layer is at least partially and conformally coated on the LED chip and the substrate.

Light-emitting device and manufacturing method thereof

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Light-emitting device and manufacturing method thereof