By doping an organic compound functioning as an electron donor (hereinafter referred to as donor molecules) into an organic compound layer contacting a cathode, donor levels can be formed between respective LUMO (lowest unoccupied molecular orbital) levels between the cathode and the organic compound layer, and therefore electrons can be injected from the cathode, and transmission of the injected electrons can be performed with good efficiency. Further, there are no problems such as excessive energy loss, deterioration of the organic compound layer itself, and the like accompanying electron movement, and therefore an increase in the electron injecting characteristics and a decrease in the driver voltage can both be achieved without depending on the work function of the cathode material.

Light Emitting Device

The invention discloses a device and method for improving the diffusion uniformity of a solar cell. The device comprises an air intake pipe, an exhaust pipe, a flow monitoring meter and an open hole; the air intake pipe is located below a quartz boat; two ends of the air intake pipe are an open end and a closed end; the open end of the air intake pipe is provided with the flow monitoring meter; the open hole in the air intake pipe faces the bottom of a diffusion quartz tube; the closed end of the air intake pipe is arranged in the diffusion quartz tube; the exhaust pipe is located above silicon wafers; the uniformity of a gas in the quartz tube can be improved; and diffusion uniformity between the cell sheets and in the cell sheets can be improved. With the device and method of the invention adopted, the controllability of subsequent process parameters can be improved, the stability of the performance and parameters of the solar cell can be ensured.

Device and method for improving diffusion uniformity of solar cell

The invention relates to the technical field of photovoltaics, and provides an avalanche photodiode and a manufacturing method thereof. The avalanche photodiode comprises a I-type light absorbing layer, a I-type cap layer and a P-type contact layer. First channels are arranged on both sides of the p-type semiconductor region. Second channels which are engaged with the first channels are arranged on a I-type multiplication layer and a P-type electric field control layer. A third channel which is engaged with the second channels is arranged on an N-type contact layer. Each first channel is wider than each second channel. Each second channel is wider than the third channel. Compared with the prior art, the avalanche photodiode provided by the invention has the advantages that three-stepped channel design is used in the existing avalanche photodiode; the engagement problem that a sidewall N contact metal layer easily appears, which is caused by too deep channels, can be improved; and the processing yield of the avalanche photodiode is improved.

Avalanche photodiode and manufacturing method thereof

The invention discloses an optical sensor device, a manufacturing method thereof, a display device and display equipment, and relates to display technology. A groove is formed in the position corresponding to a PIN device, the groove is formed by removing all or partial thickness of an interlayer dielectric layer, the bottom and the side wall of the groove are covered with a source and drain electrode layer, the PIN device is arranged on the source and drain electrode layer in the groove, and a passivation layer is arranged between the PIN device and the source and drain electrode layer with which the side wall of the groove is covered. Due to the fact that the PIN device is arranged in the groove, the PIN device in the groove is protected by metal of the source and drain electrode layer,the influence of ambient light on PIN off-state current is avoided, and the passivation layer is used for protecting the side wall of the PIN device, the side wall of the PIN device cannot be damagedin the subsequent TFT manufacturing process, and then the performance of the display device is improved, and the display effect is improved; due to the fact that photosensitive sensors, namely the PINdevice and an optical compensation control TFT, are added, optical real-time compensation can be realized, display Mura caused by the brightness variation of an EL device is effectively solved, and the display effect is improved.

Optical sensor device, manufacturing method thereof, display device and display equipment

The invention relates to a device for semiconductor laser unit Zn impurity source diffusion. The device comprises a first diffusion heating furnace and a second diffusion heating furnace which are arranged on a track in sequence. The first diffusion heating furnace is in the shape of a groove with one end sealed. The second diffusion heating furnace is in the shape of a hollow-out ring. The position, at one end of the track, behind the second diffusion heating furnace is provided with a support. The support is provided with a quartz tube with one end sealed and the other end open. A first thermocouple and a second thermocouple are sequentially arranged in the quartz tube in the longitudinal direction. The front-half portion of a quartz boat is arranged on the first thermocouple. The rear-half portion of the quartz boat is arranged on the second thermocouple. According to the device, the separation of a diffusion source and a chip is adopted, a double-temperature area is adopted to control the temperature of the diffusion source and the temperature of the chip, and during the diffusion process, the temperature of the diffusion source and the temperature of the chip are controlled so that the stability of a furnace temperature can be guaranteed; GaAs on the surface layer of the chip of a laser unit is prevented from decomposing in large quantity under the diffusion temperature, so that a high-concentration surface layer which has the advantages of being bright in surface, even in distribution of the Zn concentration, good in repeatability, and free of damage is obtained.

Device for semiconductor laser unit Zn impurity source diffusion and application thereof

The invention discloses a zinc diffusion device and a diffusion method thereof in manufacturing of a photoelectric detector. The device comprises a heating furnace, a quartz tube, a gas control system, a vacuum system, a quartz boat and a vacuum pushing device, wherein both ends of the quartz tube are sealed, the quartz boat is used for accommodating a diffusion source and an epitaxial wafer to be diffused, the vacuum pushing device is used for pushing the quartz boat into the quartz tube, one end of the quartz tube is positioned in a hearth of the heating furnace and is used as a constant-temperature area, the other end of the quartz tube is positioned on the outside of the hearth of the heating furnace, is used as a cooling area and is maintained in a room temperature state, the gas control system is used for filling nitrogen into the quartz tube, and the vacuum system is used for vacuumizing the quartz tube by a vacuum pipeline. The method has the advantages that the risk of using an oxy-hydrogen flame to seal the quartz tube in the traditional tube-closing diffusion process is avoided, the pollution at the epitaxial wafer by sucking residual slag into the quartz tube at the negative pressure in the quartz tube when the quartz tube is opened is avoided, and the problems of nonuniform temperature, difficult control of diffusion depth and overlong cooling time in the traditional tube-opening diffusion process are solved. The method is favorable for batch diffusion.

Zinc diffusion device and diffusion method thereof in manufacturing of photoelectric detector

The invention is suitable for chip manufacturing field, and provides a manufacturing method of photo diodes, which comprises the following steps: preparing an epitaxial wafer according to photo diode architecture; machining the epitaxial wafer for finally obtaining a p contact metal layer, an n contact metal layer, and performing thermal treatment; after thermal treatment, forming a high-reflection metal layer through photo-etching, electronic beam evaporating and stripping processes; and obtaining a photo diode chip through cleavage. According to the technical solution of the manufacturing method, after the p contact metal layer and the n contact metal layer are all manufactured, and furthermore all thermal treatments are performed, a high-reflection metal layer is formed. The reflection rate of the high-reflection metal layer can be improved to above 75%, and responsibility of the photo diode is effectively improved.

Manufacturing method of photo diodes

The invention discloses a method for fabricating a micro-lens The method comprises the following steps of: A, covering the surface of a wafer (1) with a light-sensitive benzocyclobutene BCB coating (2) and putting the wafer (1) in nitrogen, and heating the wafer (1) at a temperature higher than 100 DEG C, so that the BCB coating (2) is softened and solidified; B, fabricating cylindrical BCB (3) on the surface of the wafer (1) through photoetching; and C, performing thermocuring treatment on the cylindrical BCB (3), and melting the cylindrical BCB (3) into a spherical shape to form a BCB lens (4) With the method provided by the invention, complex processing procedure in the traditional micro-lens fabricating method can be simplified and the fabrication cost can be reduced

Method for fabricating micro-lens

The invention relates to the technical field of optical devices, and provides a backlight detection photodiode structure and a processing method thereof. According to the structure, a buffer layer 20, a light absorption layer 30, a cap layer 40 and a contact layer 50 grow on a substrate 10; and the structure also comprises the content as follows: a cambered surface 91 with a default curvature is arranged at one side of a light receiving surface of the substrate 10, wherein the curvature of the cambered surface 91 is 30-60 degrees; and an anti-reflection layer 90 grows on the cambered surface 91 of the substrate 10. According to the backlight detection photodiode structure, the problem of coupling of an electroabsorption-modulated laser in butterfly packaging is solved through corroding a special table (namely the substrate 10 with the cambered surface 91 with the default curvature); and the responsivity of a photodiode is improved by adopting an end surface coating process (namely growing the anti-reflection layer 90) and the backlight detection efficiency is improved.

Backlight detection photodiode structure and processing method thereof

The invention provides a photodetector and a manufacturing method thereof. The manufacturing method of the photodetector comprises the following steps: a first semiconductor contact layer and a dielectric layer are sequentially grown on a substrate; Removing a portion of the dielectric layer to form openings extending in a direction close to the first semiconductor contact layer to define a growthregion of the epitaxial layer, wherein the openings penetrate the dielectric layer; Selectively growing a mesa-shaped epitaxial layer on the first semiconductor contact layer in a deposition manner according to the growth region of the epitaxial layer. The remaining dielectric layer on the first semiconductor contact layer is removed and a contact metal layer is formed on the substrate. The photodetector can solve the problems of physical defects and reactive ion pollution caused by dry etching and poor consistency caused by chemical wet etching process. The manufacturing process of the photodetector is simple, and the photodetector manufactured by the manufacturing method has a table structure, good consistency and high reliability.

A photoelectric detector and a manufacturing method thereof

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