In this study, the enhancement of physical absorption of carbon dioxide by Fe3O4-water nanofluid under the influence of AC and DC magnetic fields was investigated. Furthermore, a gas-liquid mass transfer model for single bubble systems was applied to predict mass transfer parameters. The coated Fe3O4 nanoparticles were prepared using co-percipitation method. The results from characterization indicated that the nanoparticles surfaces were covered with hydroxyl groups and nanoparticles diameter were 10–13 nm. The findings showed that the mass transfer rate and solubility of carbon dioxide in magnetic nanofluid increased with an increase in the magnetic field strength. Results indicated that the enhancement of carbon dioxide solubility and average molar flux gas into liquid phase, particularly in the case of AC magnetic field. Moreover, results demonstrated that mass diffusivity of CO2 in nanofluid and renewal surface factor increased when the intensity of the field increased and consequently diffusion layer thickness decreased. © 2016 American Institute of Chemical Engineers AIChE J, 63: 2176–2186, 2017

Investigation of the effect of magnetic field on mass transfer parameters of CO2 absorption using Fe3O4-water nanofluid

Tin(II) sulfide (SnS) is an attractive semiconductor for solar energy conversion in thin film devices due to its bandgap of around 1.3 eV in its orthorhombic polymorph, and a band gap energy of 1.5–1.7 eV for the cubic polymorph—both of which are commensurate with efficient light harvesting, combined with a high absorption coefficient (10−4 cm−1) across the NIR–visible region of the electromagnetic spectrum, leading to theoretical power conversion efficiencies >30%. The high natural abundance and a relative lack of toxicity of its constituent elements means that such devices could potentially be inexpensive, sustainable, and accessible to most nations. SnS exists in its orthorhombic form as a layer structure similar to black phosphorus; therefore, the bandgap energy can be tuned by thinning the material to nanoscale dimensions. These and other properties enable SnS applications in optoelectronic devices (photovoltaics, photodetectors), lithium- and sodium-ion batteries, and sensors among others with a significant potential for a variety of future applications. The synthetic routes, structural, optical and electronic properties as well as their applications (in particular photonic applications and energy storage) of bulk and 2D tin(II) sulfide are reviewed herein.

A Review of the Synthesis, Properties, and Applications of Bulk and Two-Dimensional Tin(II) Sulfide (SnS)

An overview is given on the electronic and optical properties of Si and Ge nanocrystals. We model freestanding Si and Ge nanocrystals passivated with H, with up to 363 group-IV atoms and 276 H and oxidized nanocrystals with additional silicon oxide shells, e.g. Si 41 (O 60 Si 42 )(O 108 Si 64 )H 148 . The results discussed are based on parameter-free calculations for relaxed atomic structures. The electronic states and the many-body effects are considered within the density-functional theory and the supercell method. Energy gaps are described within the Kohn-Sham independent-particle picture and within the independent-quasiparticle picture, whereas electronic excitations are treated within the delta self-consistent method by pair excitation energies. The projector-augmented wave method allows the calculation of optical matrix elements, oscillator strengths, optical spectra, and radiative lifetimes. We discuss quantum confinement, structural relaxation, oxidation, and the role of defects in oxidized Si NCs.

Optical properties of Si and Ge nanocrystals: Parameter‐free calculations

Nanoporous graphene quantum dots constructed from nanoribbon superlattices with controllable pore morphology and size for wastewater treatment

A photosensor was fabricated based on a lead sulfide (PbS)/porous silicon (Ps) heterojunction An n-type Si(100) single crystal wafer was used to prepare the Ps using a photo-electrochemical etching method A PbS nanocrystalline thin film was deposited onto the Ps substrate using a microwave-assisted chemical bath deposition (MA-CBD) technique The current-voltage (I-V) characteristics of the fabricated PbS/Ps photosensor were studied under dark, 10 mW/cm2, 20 mW/cm2, and 40 mW/cm2 illumination by light The device shows good response to light even without a bias voltage and the sensitivity when the applied voltage is 0 V decreased from 566 × 104 % under 10 mW/cm2 to 18 × 103 % when the device is illuminated by 40 mW/cm2 intensity light The fabricated PbS/Ps photdetector shows a faster response to light of 043 sec when the applied voltage and intensity of light were 10 V and 40 mW/cm2, respectively Moreover, the fastest fall time was 04 sec obtained for the device that was exposed to 40 mW/cm2 light and biased by 075 V

A Self-Powered heterojunction photodetector based on a PbS nanostructure grown on porous silicon substrate

Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes to Nanomeeting-2017

Physics of Nanostructures Frontiers of Two-Dimensional Crystals Nanoelectromagnetics Chemistry of Nanostructures Nanotechnology Nanomaterials and Nanostructures for Biology and Medicine Nanostructure Based Devices Belarus-Korea Workshop

Physics, Chemistry and Applications of Nanostructures: Proceedings of International Conference Nanomeeting – 2015

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Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes to Nanomeeting-2017

Physics, Chemistry and Applications of Nanostructures: Proceedings of International Conference Nanomeeting – 2015