A flattening method, by utilizing the advantages of the CARE method and making up for the disadvantages, can perform removal processing of a surface of a workpiece at a sufficient processing rate and can provide a processed surface having enhanced flatness without leaving damage in the processed surface. A flattening method comprises at least two surface removal steps and at least two cleaning steps, the final surface removal step being a catalyst-referred etching step comprising immersing a workpiece in a processing solution containing at least one of hydrohalic acid, hydrogen peroxide water and ozone water, and bringing a surface of a catalyst platen into contact with or close proximity to a surface to be processed of the workpiece to process the surface, said catalyst platen having in a surface a catalyst selected from the group consisting of platinum, gold, a ceramic solid catalyst, a transition metal, glass, and an acidic or basic solid catalyst.

Flattening method and flattening apparatus

A polishing head is provided with an annular rigid ring (12); a rubber film (13) bonded on the rigid ring with uniform tensile strength; a middle plate (14) connected to the rigid ring to form a space with the rubber film and the rigid ring; and an annular template (16), which is concentrically arranged with the rigid ring at the periphery of a lower surface section of the rubber film and has an outer diameter larger than the inner diameter of the rigid ring. Pressure in the space can be changed by a pressure adjusting mechanism (17). The polishing head holds the rear surface of a work (W) on the lower surface section of the rubber film and polishes the surface of the work by bringing the surface of the work slidably into contact with a polishing cloth adhered on a platen. The inner diameter of the template is smaller than that of the rigid ring, and a ratio of a difference between the inner diameter of the rigid ring and that of the template to a difference between the inner diameter and the outer diameter of the template is 26% or more but not more than 45%. Thus, the polishing head or the like is provided for stably obtaining constant planarity.

Polishing head and polishing apparatus

A polishing method that carries out a multi-step polishing process with improved polishing conditions (polishing recipe) while omitting measurement of the surface conditions of a substrate, as carried out between polishing steps thereby increasing the throughput. The polishing method for polishing workpieces by repeating the sequential operations of taking a workpiece out of a cassette in which a plurality of workpieces are stored, carrying out multi-step polishing of a surface of the workpiece and returning the workpiece to the cassette, includes carrying out one of the following two polishing processes for the workpiece taken out of the cassette: a first polishing process comprising carrying out the multi-step polishing under preset conditions and measurement of the surface of the workpiece before and after each polishing step; and a second polishing process comprising carrying out a predetermined step of the multi-step polishing under polishing conditions which have been modified based on the results of the measurement.

Polishing method and polishing apparatus

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method, capable of applying planarization processing with high planarity to a pattern of a silicon oxide film. SOLUTION: In the semiconductor device manufacturing method for chemico-mechanically polishing and planarizing a substance to be polished, made of a silicon oxide film formed on a semiconductor substrate by relatively sliding the substance to be polished and a polishing pad arranged on a polishing table, in a state where a polishing slurry is supplied to the polishing pad; and the substance to be polished is abutted against the polishing pad, under the condition that polishing pressure lie within a range of 50 to 200 hPa, and that the rotational frequency of the polishing pad lie within a range of 10 to 80 rpm, in a state where the polishing slurry-containing cerium oxide grains, and an anionic surface active agent be supplied to the polishing pad which has a modulus of elasticity within a range of 300 to 600 MPa. COPYRIGHT: (C)2010,JPO&INPIT

Semiconductor device manufacturing method

A polishing method includes: a pre-polishing film thickness measurement step of taking a substrate before polishing out of a cassette and measuring a thickness of a polishing film of the substrate with a film thickness measurement device; the pre-polishing substrate withdrawal step of returning the substrate after the pre-polishing film thickness measurement to the cassette; the polishing step of taking the substrate, which has been returned to the cassette, out of the cassette and polishing the substrate; the cleaning/drying step of cleaning and drying the substrate after polishing; the post-polishing substrate withdrawal step of returning the substrate after cleaning/drying to the cassette; and the post-polishing film thickness measurement step of taking the substrate after cleaning/drying, which has been returned to the cassette, out of the cassette and measuring the thickness of the polishing film of the substrate with the film thickness measurement device.

Polishing method and polishing apparatus, and program for controlling polishing apparatus

A polishing method is used for polishing a surface of a substrate such as a semiconductor wafer. The polishing method includes a polishing process for polishing a surface of the substrate in accordance with a preset polishing recipe, a pad cleaning process for removing foreign matters on the polishing pad by ejecting a cleaning fluid onto the polishing pad, and a substrate transferring process in which the polished substrate is removed from the top ring at a substrate transferring position, a subsequent substrate to be polished is loaded onto the top ring, and then the top ring holding the subsequent substrate to be polished is returned to the polishing table. The pad cleaning process is started after the completion of the polishing recipe is detected, and the pad cleaning process is terminated by detecting a position of the subsequent substrate to be polished which is undergoing the substrate transferring process.

Polishing method and apparatus

The present invention comprises: a state information acquisition unit that acquires state information including the position of a substrate within the device and the time spent thereby in various units; an action selection part that has a prediction model for predicting action performance values for whether to retrieve a new substrate from a cassette in a given state and for which processing unit to convey the substrate to, and that selects one action on the basis of the prediction model by using the acquired state information as input; an instructions signal transmitting part that transmits an instructions signal to perform the selected action; an operation results acquisition part that acquires operation results including processed substrate count and wait time; and a prediction model updating part that calculates a reward on the basis of the acquired operation results so that the reward increases as the number of processed substrates increases and the wait time decreases, and updates the prediction model on the basis of the reward.

Machine learning device, substrate processing device, trained model, machine learning method, and machine learning program

A non-transitory computer-readable storage medium storing a program of screen control capable of improving the user-friendliness with respect to a semiconductor manufacturing apparatus is disclosed. The program of screen control causes a computer to perform operation of: judging whether or not a vertical screen resolution of a display screen is larger than a horizontal screen resolution of the display screen; and dividing a display area of the display screen into a main screen display area for displaying a monitoring image with respect to an operational status of a processing unit and a work area for displaying an operation image with respect to an operation of the processing unit when the vertical screen resolution is larger than the horizontal screen resolution.

Non-transitory computer-readable storage medium storing a program of screen control and semiconductor manufacturing apparatus

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