T. Warming
Technical University of Berlin
18 Papers
201 Citations
T. Warming is an academic researcher from Technical University of Berlin. The author has contributed to research in topics: Quantum dot & Photoluminescence. The author has an hindex of 8, co-authored 18 publications.
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Papers
20 Gb/s 85 $^{\circ}$ C Error-Free Operation of VCSELs Based on Submonolayer Deposition of Quantum Dots
F. Hopfer,Alex Mutig,Gerrit Fiol,Matthias Kuntz,V. A. Shchukin,V. A. Haisler,T. Warming,E. Stock,S. S. Mikhrin,Igor Krestnikov,D.A. Livshits,A. R. Kovsh,Carsten Bornholdt,Andrea Lenz,Holger Eisele,Mario Dähne,N. N. Ledentsov,Dieter Bimberg +17 more
- 09 Oct 2006
TL;DR: In this article, a 1.980 nm vertical-cavity surface-emitting laser based on sub-monolayer growth of quantum dots was shown to operate error free with bit error rates better than 10 at 25 and 85degC for 20 Gb/s without current adjustment.
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Energy transfer in close-packed PbS nanocrystal films
Veronika Rinnerbauer,Hans-Joachim Egelhaaf,Kurt Hingerl,P. Zimmer,Stefan Werner,T. Warming,Axel Hoffmann,Maksym V. Kovalenko,Wolfgang Heiss,G. Hesser,Friedrich Schäffler +10 more
TL;DR: In this article, the emission properties of close-packed films of PbS nanocrystals that show emission in the infrared were studied and thermal activation and energy transfer processes efficiently replenish the core states with charge carriers from the surface states, increasing the photoluminescence yield.
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Hole-hole and electron-hole exchange interactions in single InAs/GaAs quantum dots
TL;DR: In this paper, a combined analysis of microphotoluminescence (PL) spectra of the same single quantum dot (QD) enables an unambiguous identification of four sharp resonances in the excitation spectrum detected on the positive trion transition and reveals the complete fine structure of the hot trion.
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Spectral hole burning in self-organized quantum dots
R. Heitz,T. Warming,F. Guffarth,C. M. A. Kapteyn,Pavel N. Brunkov,V. M. Ustinov,Dieter Bimberg +6 more
TL;DR: In this article, a self-organized InAs/GaAs quantum dot embedded in the space-charge region of a p-i-n diode was demonstrated to have a hole storage time of 1.5 ms and saturation densities of only 0.5 mW/cm −2.
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