An embodiment of the invention relates to a method for producing an optoelectronic component, comprising the following steps: A) providing an epitaxial growth substrate (1), B) growing at least one semiconductor layer (2) thereon by epitaxy in order to produce an active zone during operation, C) applying a metal mirror layer (3) onto the semiconductor layer (2), D) applying at least one contact layer (8) for the electronic contacting of the component, E) separating the epitaxial growth substrate (1) from the semiconductor layer (2), wherein a surface of the semiconductor layer (2) is exposed, F) structuring the semiconductor layer (2) by means of an etching method from the side of the surface that was exposed in step E)

Optoelectronic Component and Method for the Production Thereof

In mindestens einer Ausfuhrungsform beinhaltet das optoelektronische Halbleiterbauteil (1) einen Trager (2) mit einem Konversionsmittelkorper (21) und mit einem Vergusskorper (22). Der Vergusskorper (22) umgibt, in Draufsicht gesehen, den Konversionsmittelkorper (21) wenigstens stellenweise. Elektrische Kontaktstrukturen (3) sind an dem Trager (2) angebracht. Eine Mehrzahl von optoelektronischen Halbleiterchips (4) ist an dem Trager (2) angebracht. Die Halbleiterchips (4) sind zu einer Strahlungserzeugung eingerichtet. Der Konversionsmittelkorper (21) ist als Platte geformt. Die Halbleiterchips (4) sind mechanisch unmittelbar mit dem Konversionsmittelkorper (21) verbunden. Der Konversionsmittelkorper (21) ist frei von Aussparungen fur die elektrischen Kontaktstrukturen (3) und ist nicht von diesen durchdrungen.

Optoelektronisches halbleiterbauteil und verfahren zur herstellung eines optoelektronischen halbleiterbauteils

In one embodiment, the method produces light-emitting diode filaments (10) and comprises the steps: A) fitting light-emitting diode chips (3) directly onto a first carrier (1), B) covering the light-emitting diode chips (3) with a second carrier (2), C) encapsulating the light-emitting diode chips (3) with a potting body (4) by injection moulding to form a cohesive filament composite (40), wherein the two carriers (1, 2) are used as moulds, and wherein the potting body (4) is integrally formed directly onto the light-emitting diode chips (3), D) removing the first carrier (1) or the second carrier (2) or both carriers (1, 2), E) fitting electrical connections (5) to the potting body (4) and between the light-emitting diode chips (3), so that the light-emitting diode chips (3) are electrically interconnected, and F) separating the filament composite (40) to form the light-emitting diode filaments (10), wherein each of the finished light-emitting diode filaments (10) is mechanically self-supporting, comprises at least eight of the light-emitting diode chips (3) and has a ratio of length to width of at least 15.

Method for producing light-emitting diode filaments, and light-emitting diode filament

The invention relates to an optoelectronic semiconductor chip (10), which comprises a semiconductor body (1) made of semiconductor material, a p-contact layer (21a) and an n-contact layer (2). The semiconductor body (1) comprises an active layer (1a) provided for generating radiation. The semiconductor body has a p-side (1c) and an n-side (1b), between which the active layer (1a) is arranged. The p-contact layer (21a) is provided for electrical contacting of the p-side (1c). The n-contact layer (2) is provided for electrical contacting of the n-side (1b). The n-contact layer (2) contains a TCO layer (2a) and a mirror layer (2b), wherein the TCO layer (2a) is arranged between the n-side (1b) of the semiconductor body (1) and the mirror layer (2b).

Optoelectronic semiconductor chip

A method for producing optoelectronic semiconductor components and an optoelectronic semiconductor component are disclosed. In an embodiment the method includes: A) creating a blank by pultrusion from a glass melt, B) shaping the blank into a billet-shaped optical element with a longitudinal axis, the optical element having a mounting side and a light outlet side, C) producing conductor tracks on the mounting side, D) mounting a plurality of optoelectronic semiconductor chips on the mounting side of the optical element and connecting them to the conductor tracks and E) separating the optical element into the optoelectronic semiconductor components, wherein each optoelectronic semiconductor component comprises at least two of the semiconductor chips, and wherein at least steps A) to D) are performed in the stated sequence.

Method for producing optoelectronic semiconductor components and optoelectronic semiconductor component

In at least one embodiment, the semiconductor component includes at least one optoelectronic semiconductor chip having a radiation exit side. The surface-mountable semiconductor component comprises a shaped body that covers side surfaces of the semiconductor chip directly and in a positively locking manner. The shaped body and the semiconductor chip do not overlap, as seen in a plan view of the radiation exit side.

Method for producing an optoelectronic semiconductor component and optoelectronic semiconductor component

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Method for producing an optoelectronic semiconductor component and optoelectronic semiconductor component